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公开(公告)号：US20230229094A1
公开(公告)日：2023-07-20
申请号：US18151334
申请日：2023-01-06
Applicant: ASML Netherlands B.V.
Inventor： Simon Reinald HUISMAN , Arjan Johannes Anton BEUKMAN , Arie Jeffrey DEN BOEF , Sebastianus Adrianus GOORDEN , Nitish KUMAR , Jin LIAN , Zili ZHOU
CPC classification number: G03F9/7065 , G02B26/0833 , G02B27/283 , G03F7/70575 , G03F7/70616
Abstract: Disclosed is an illumination arrangement for spectrally shaping a broadband illumination beam to obtain a spectrally shaped illumination beam. The illumination arrangement comprises a beam dispersing element for dispersing the broadband illumination beam and a spatial light modulator for spatially modulating the broadband illumination beam subsequent to being dispersed. The illumination arrangement further comprises at least one of a beam expanding element for expanding said broadband illumination beam in at least one direction, located between an input of the illumination arrangement and the spatial light modulator; and a lens array, each lens of which for directing a respective wavelength band of the broadband illumination beam subsequent to being dispersed onto a respective region of the spatial light modulator.
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公开(公告)号：US20240288782A1
公开(公告)日：2024-08-29
申请号：US18289765
申请日：2022-05-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Zili ZHOU , Daan SWINKELS , Jin LIAN
IPC: G03F7/00
CPC classification number: G03F7/706849 , G03F7/70633 , G03F7/70641 , G03F7/706831 , G03F7/706837 , G03F7/706845 , G03F7/706851
Abstract: A method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method includes configuring measurement radiation to obtain a configured measurement spectrum of the measurement radiation by: imposing an intensity weighting on individual wavelength bands of the measurement radiation such that the individual wavelength bands have an intensity according to the intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of the measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.
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3.发明申请公开(公告)号：US20180321598A1
公开(公告)日：2018-11-08
申请号：US15954995
申请日：2018-04-17
Applicant: ASML Netherlands B.V.
Inventor： Jin LIAN , Nitesh PANDEY
IPC: G03F7/20
Abstract: Methods and apparatus for measuring a parameter of interest of a target structure formed on substrate are disclosed. In one arrangement, the target structure comprises a first sub-target and a second sub-target. The first sub-target comprises a first bias and the second sub-target comprises a second bias. The method comprises determining the parameter of interest using a detected or estimated reference property of radiation at a first wavelength scattered from the first sub-target and a detected or estimated reference property of radiation at a second wavelength scattered from the second sub-target. The first wavelength is different to the second wavelength.
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4.发明申请公开(公告)号：US20180299794A1
公开(公告)日：2018-10-18
申请号：US15942423
申请日：2018-03-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Jin LIAN , SAMEE UR-REHMAN , Martin Jacobus Johan JAK
CPC classification number: G03F7/70633 , G01B11/02 , G03F7/70566 , G03F7/70575 , G03F7/70583 , G03F7/70616
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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公开(公告)号：US20240184215A1
公开(公告)日：2024-06-06
申请号：US18286327
申请日：2022-03-23
Applicant: ASML Netherlands B.V.
Inventor： Jin LIAN , Armand Eugene Albert KOOLEN , Sebastianus Adrianus GOORDEN , Hui Quan LIM
IPC: G03F7/00
CPC classification number: G03F7/70516 , G03F7/70025 , G03F7/70633
Abstract: Disclosed is a method of determining a correction for a measurement of a target and an associated apparatus. The measurement is subject to a target-dependent correction parameter which has a dependence the target and/or a stack on which the target is comprised. The method comprises obtaining first measurement data relating to a measurement of a fiducial target, said first measurement data comprising at least a first and second set of intensity parameter values: and second measurement data relating to a measurement of the fiducial target, the second measurement data comprising a third set of intensity parameter values. A target-invariant correction parameter is determined from said first measurement data and second measurement data. the target-invariant correction parameter being a component of the target-dependent correction parameter which is not dependent on the target and/or a stack: and the correction is determined from said target-in-variant correction parameter.
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Patent Agency Ranking
公开(公告)号：US20230305407A1
公开(公告)日：2023-09-28
申请号：US18018065
申请日：2021-07-06
Applicant: ASML Netherlands B.V.
Inventor： Fei LIU , Jin LIAN , Zhuangxiong HUANG , Laurentius Cornelius DE WINTER , Frank STAALS
CPC classification number: G03F7/70641 , G01N21/4738 , G01N21/4788 , G03F7/706851
Abstract: Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.
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公开(公告)号：US20200004165A1
公开(公告)日：2020-01-02
申请号：US16562869
申请日：2019-09-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Janneke RAVENSBERGEN , Duygu AKBULUT , Nitesh PANDEY , Jin LIAN
Abstract: A metrology apparatus is disclosed that has an optical system to focus radiation onto a structure and directs redirected radiation from the structure to a detection system. The optical system applies a plurality of different offsets of an optical characteristic to radiation before and/or after redirected by the structure, such that a corresponding plurality of different offsets are provided to redirected radiation derived from a first point of a pupil plane field distribution relative to redirected radiation derived from a second point of the pupil plane field distribution. The detection system detects a corresponding plurality of radiation intensities resulting from interference between the redirected radiation derived from the first point of the pupil plane field distribution and the redirected radiation derived from the second point of the pupil plane field distribution. Each radiation intensity corresponds to a different one of the plurality of different offsets.
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公开(公告)号：US20240027913A1
公开(公告)日：2024-01-25
申请号：US18255261
申请日：2021-12-02
Applicant: ASML Netherlands B.V. , ASML Holding N.V.
Inventor： Sergei SOKOLOV , Simon Reinald HUISMAN , Jin LIAN , Sebastianus Adrianus GOORDEN , Muhsin ERALP , Henricus Petrus Maria PELLEMANS , Justin Lloyd KREUZER
IPC: G03F7/00
CPC classification number: G03F7/70091 , G03F7/70625 , G03F7/70633
Abstract: A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).
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公开(公告)号：US20230176491A1
公开(公告)日：2023-06-08
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor ZWIER , Maurits VAN DER SCHAAR , Hilko Dirk BOS , Hans VAN DER LAAN , S.M. Masudur Rahman AL ARIF , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert KOOLEN , Victor CALADO , Kaustuve BHATTACHARYYA , Jin LIAN , Sebastianus Adrianus GOORDEN , Hui Quan LIM
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70558 , G03F7/70633 , G03F7/70625
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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10.发明申请公开(公告)号：US20190285993A1
公开(公告)日：2019-09-19
申请号：US16428215
申请日：2019-05-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh PANDEY , Jin LIAN , Samee Ur REHMAN , Martin Jacobus Johan JAK
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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