公开(公告)号：US10361059B2

公开(公告)日：2019-07-23

申请号：US15097996

申请日：2016-04-13

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Xiao Bai ,  Zhimin Wan ,  Donald Wayne Berrian

IPC: H01J37/147 ,  H01J37/317 ,  C23C14/48

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

公开(公告)号：US09852887B2

公开(公告)日：2017-12-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

公开(公告)号：US09824850B2

公开(公告)日：2017-11-21

申请号：US14605985

申请日：2015-01-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/317 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

公开(公告)号：US09748072B2

公开(公告)日：2017-08-29

申请号：US14312617

申请日：2014-06-23

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Rekha Padmanabhan ,  Xiao Bai ,  Gary N. Cai ,  Ching-I Li ,  Ger-Pin Lin ,  Shao-Yu Hu ,  David Hoglund ,  Robert E. Kaim ,  Kourosh Saadatmand

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/0835 ,  H01J2237/303 ,  H01J2237/30477

Abstract: In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

公开(公告)号：US09147550B2

公开(公告)日：2015-09-29

申请号：US13692461

申请日：2012-12-03

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Wei-Cheng Lin ,  Zhimin Wan ,  Koulin Hu

IPC: H01J27/00 ,  H01J27/02 ,  H01J37/08

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/082 ,  Y10T137/0329

Abstract: A gas mixture method and apparatus of prolonging lifetime of an ion source for generating an ion beam particularly an ion beam containing carbon is proposed here. By mixing the dopant gas and the minor gas together to generate an ion beam, undesired reaction between the gas species and the ion source can be mitigated and thus lifetime of the ion source can be prolonged. Accordingly, quality of ion beam can be maintained.

Abstract translation: 这里提出了一种用于产生离子束，特别是含有离子束的离子源的寿命延长的气体混合方法和装置。 通过将掺杂气体和次要气体混合在一起以产生离子束，可以减轻气体物质和离子源之间的不期望的反应，从而可以延长离子源的寿命。 因此，可以保持离子束的质量。

公开(公告)号：US12170182B2

公开(公告)日：2024-12-17

申请号：US17366308

申请日：2021-07-02

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Chi-ming Huang ,  Shao-Yu Hu

IPC: H01J37/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/265

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.

公开(公告)号：US09697988B2

公开(公告)日：2017-07-04

申请号：US14883538

申请日：2015-10-14

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Kourosh Saadatmand ,  Nicholas White

IPC: H01J37/00 ,  H01J37/30

CPC classification number: H01J37/3007 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/04924

Abstract: Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.