公开(公告)号：US07108751B2

公开(公告)日：2006-09-19

申请号：US10739126

申请日：2003-12-19

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32935

摘要： A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal. A method of determining the state of the consumable gas inject plate comprises: measuring a change in the gas injection pressure associated with either a change in the process gas mass flow rate or the processing pressure; determining a response time for the change in pressure; and comparing the response time during erosion to a response time during no erosion.

摘要翻译： 描述了包括气体注入系统的等离子体处理装置，其中气体注入系统包括气体注入组件主体，联接到气体注入组件主体的可消耗气体注入板，以及耦合到气体注入系统 气体注入系统体和消耗气体注入板。 气体注入系统被配置为从至少一个质量流量控制器接收处理气体并将处理气体分配到等离子体处理装置内的处理区域，并且压力传感器被配置成测量气体注入气室内的气体注入压力 。 耦合到压力传感器的控制器被配置为从压力传感器接收信号并且基于该信号来确定可消耗气体注入板的状态。 确定可消耗气体注入板的状态的方法包括：测量与处理气体质量流量或处理压力的变化相关联的气体注入压力的变化; 确定压力变化的响应时间; 并将侵蚀期间的响应时间与不侵蚀期间的响应时间进行比较。

公开(公告)号：US07103443B2

公开(公告)日：2006-09-05

申请号：US10482341

申请日：2002-06-20

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： G06F19/00

CPC分类号： H01J37/3244 ,  H01L21/67017

摘要： A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

摘要翻译： 作为等离子体处理系统的一部分，在气体注入系统中利用包括多个成形孔（例如，声音和简单孔和发散喷嘴）的气体注射板的方法和系统。 通过利用成形孔，可以改善气流的方向性。 这种改进在高纵横比处理中特别有益。

公开(公告)号：US06740853B1

公开(公告)日：2004-05-25

申请号：US10088504

申请日：2002-09-17

申请人： Wayne L. Johnson ,  Eric J. Strang

发明人： Wayne L. Johnson ,  Eric J. Strang

IPC分类号： H05B368

CPC分类号： H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/6831

摘要： A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

摘要翻译： 用于在等离子体处理期间保持衬底（例如，晶片或LCD面板）的衬底保持器。 衬底保持器是一堆处理元件，每个处理元件执行至少一个功能。 这些元件包括静电卡盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。 每个元件被设计成与处理系统的特性匹配，例如通过在正常处理期间基于衬底的热损失特性施加热量。 集成设计允许对操作条件的精确控制，包括但不限于快速加热和快速冷却基板。

公开(公告)号：US09139910B2

公开(公告)日：2015-09-22

申请号：US12814301

申请日：2010-06-11

申请人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

发明人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/463

摘要： A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

摘要翻译： 描述了在沉积系统中在衬底上沉积薄膜的方法。 该方法包括在沉积系统中设置包括多个加热元件区域的气体加热装置，并且独立地控制多个加热元件区域中的每一个的温度，其中多个加热元件区域中的每一个具有一个或多个电阻加热 元素。 另外，该方法包括在沉积系统中的衬底保持器上设置衬底，其中衬底保持器具有一个或多个温度控制区。 该方法还包括向耦合到沉积系统的气体加热装置提供成膜组合物，使用气体加热装置热解成膜组合物的一种或多种组分，并将成膜组合物引入到沉积系统中的基底上 在基板上沉积薄膜。

公开(公告)号：US08927907B2

公开(公告)日：2015-01-06

申请号：US13307176

申请日：2011-11-30

申请人： Steven T. Fink ,  Eric J. Strang

发明人： Steven T. Fink ,  Eric J. Strang

IPC分类号： H05B3/02 ,  F25B21/02 ,  H01L21/67

CPC分类号： H01L21/67103 ,  Y10T279/23

摘要： A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).

摘要翻译： 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如，气体或真空填充的室）更低的导热系数的绝缘材料制成。

公开(公告)号：US08296687B2

公开(公告)日：2012-10-23

申请号：US10673506

申请日：2003-09-30

申请人： Eric J. Strang ,  Andrej Mitrovic

发明人： Eric J. Strang ,  Andrej Mitrovic

IPC分类号： G06F17/50

CPC分类号： G05B19/41885 ,  G05B2219/32364 ,  G05B2219/32385 ,  G05B2219/45031 ,  Y02P90/26 ,  Y02P90/86

摘要： A method, system and computer readable medium for analyzing a process performed by a semiconductor processing tool. The method includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is performed using the input data and the physical model to provide a first principles simulation result; and the first principles simulation result is used to determine a fault in the process performed by the semiconductor processing tool.

摘要翻译： 一种用于分析由半导体处理工具执行的处理的方法，系统和计算机可读介质。 该方法包括输入与半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 使用输入数据和物理模型进行第一原理模拟，以提供第一原理模拟结果; 并且第一原理模拟结果用于确定由半导体处理工具执行的过程中的故障。

公开(公告)号：US08073667B2

公开(公告)日：2011-12-06

申请号：US10673507

申请日：2003-09-30

申请人： Eric J. Strang ,  Andrej Mitrovic

发明人： Eric J. Strang ,  Andrej Mitrovic

IPC分类号： G06F17/50 ,  G06F19/00 ,  G06G7/48 ,  H01L21/00

CPC分类号： G06F17/5018 ,  G06F2217/10

摘要： A method, system and computer readable medium for controlling a process performed by a semiconductor processing tool includes inputting data relating to a process performed by the semiconductor processing tool, and inputting a first principles physical model relating to the semiconductor processing tool. First principles simulation is then performed using the input data and the physical model to provide a first principles simulation result, and the first principles simulation result is used to control the process performed by the semiconductor processing tool.

摘要翻译： 用于控制由半导体处理工具执行的处理的方法，系统和计算机可读介质包括输入与由半导体处理工具执行的处理相关的数据，以及输入与半导体处理工具相关的第一原理物理模型。 然后使用输入数据和物理模型执行第一原理模拟以提供第一原理模拟结果，并且第一原理模拟结果用于控制由半导体处理工具执行的处理。

公开(公告)号：US07740704B2

公开(公告)日：2010-06-22

申请号：US10875949

申请日：2004-06-25

申请人： Eric J. Strang

发明人： Eric J. Strang

IPC分类号： C23C16/52 ,  C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45536 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45574

摘要： A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.

摘要翻译： 一种用于执行原子层沉积（ALD）的处理系统，包括处理室，设置在处理室内的衬底保持器，以及被配置为将第一处理气体和第二处理气体供应到处理室的气体注入系统。 气体注入系统被配置为在第一位置和第二位置处将第一处理气体和第二处理气体引入处理室，其中第一处理气体和第二处理气体中的至少一个交替地并且顺序地介于 第一个位置和第二个位置。

公开(公告)号：US07582186B2

公开(公告)日：2009-09-01

申请号：US10739127

申请日：2003-12-19

申请人： Eric J. Strang ,  Steven T. Fink

发明人： Eric J. Strang ,  Steven T. Fink

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  H01L21/68735

摘要： A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

摘要翻译： 被配置为联接到衬底保持器的聚焦环包括暴露于过程的第一表面; 与所述第一表面相对的第二表面，用于联接到所述衬底保持器的上表面; 用于面对衬底的周边的内部径向边缘; 和外部径向边缘。 第二表面还包括一​​个或多个接触特征，每个接触特征被配置为与形成在衬底保持器的上表面内的一个或多个接收特征配合。 聚焦环还可以包括用于将聚焦环机械地夹持到基板保持器的夹紧特征。 此外，可以将气体供应到驻留在聚焦环上的一个或多个接触特征与衬底保持器上的一个或多个接收特征之间的接触空间。

公开(公告)号：US07347901B2

公开(公告)日：2008-03-25

申请号：US10721500

申请日：2003-11-26

申请人： Steven T. Fink ,  Eric J. Strang

发明人： Steven T. Fink ,  Eric J. Strang

IPC分类号： C23C16/00 ,  H05B3/68

CPC分类号： H01L21/67103 ,  Y10T279/23

摘要： A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).

摘要翻译： 一种热分区衬底保持器，其包括基本上圆柱形的基部，其具有构造成支撑衬底的顶表面和底表面。 多个温度控制元件设置在基座内。 绝缘体将温度控制元件热分离。 绝缘体由具有比基底（例如气体或真空填充室）更低的导热系数的绝缘材料制成。