Abstract:
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).
Abstract:
A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.
Abstract:
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).
Abstract:
A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.
Abstract:
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).
Abstract:
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).
Abstract:
A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.
Abstract:
A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas- or vacuum-filled chamber).
Abstract:
A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
Abstract:
A method and system (1) for utilizing shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system (20) as part of a plasma process system. By utilizing the shaped orifices, directionality of gas flow (25) can be improved. This improvement is especially beneficial in high aspect ratio processing.