摘要:
A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).
摘要:
A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.
摘要:
A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.
摘要:
A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patterned film area thereon. A Si film is non-selectively deposited onto the structure, the Si film comprising an epitaxial Si film deposited onto the epitaxial Si surface and a non-epitaxial Si film deposited onto an exposed surface of the patterned film. The non-epitaxial Si film is selectively dry etched away to form a patterned epitaxial Si film. The Si film may be a SiGe film.
摘要:
A method for forming strained epitaxial carbon-doped silicon (Si) films, for example as raised source and drain regions for electronic devices. The method includes providing a structure having an epitaxial Si surface and a patterned film, non-selectively depositing a carbon-doped Si film onto the structure, the carbon-doped Si film containing an epitaxial carbon-doped Si film deposited onto the epitaxial Si surface and a non-epitaxial carbon-doped Si film deposited onto the patterned film, and non-selectively depositing a Si film on the carbon-doped Si film, the Si film containing an epitaxial Si film deposited onto the epitaxial carbon-doped Si film and a non-epitaxial Si film deposited onto the non-epitaxial carbon-doped Si film. The method further includes dry etching away the non-epitaxial Si film, the non-epitaxial carbon-doped Si film, and less than the entire epitaxial Si film to form a strained epitaxial carbon-doped Si film on the epitaxial Si surface.
摘要:
A method for using a silicon germanium (SiGe) surface layer to integrate a high-k dielectric layer into a semiconductor device. The method forms a SiGe surface layer on a substrate and deposits a high-k dielectric layer on the SiGe surface layer. An oxide layer, located between the high-k dielectric layer and an unreacted portion of the SiGe surface layer, is formed during one or both of deposition of the high-k dielectric layer and an annealing process after deposition of the high-k dielectric layer. The method further includes forming an electrode layer on the high-k dielectric layer.
摘要:
A method and system for processing a substrate includes providing the substrate in a process chamber, the substrate having an oxide layer formed thereon, and exposing the substrate to an etching gas containing F2 gas at a first temperature to remove the oxide layer from the substrate. The substrate may subsequently be heated to a second temperature greater than the first temperature, and a film may then be formed on the substrate at the second temperature. In one embodiment, a Si film is epitaxially formed on a Si substrate.
摘要:
A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.
摘要:
A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition SixGe1-x layer on dielectric layer, and a Si cap layer on the variable composition SixGe1-x layer. The variable composition SixGe1-x layer can contain a SixGe1-x layer with a graded Ge content or a plurality of SixGe1-x sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition SixGe1-x layer on the seed layer, and a Si cap layer on the variable composition SixGe1-x layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.
摘要翻译:SiGe薄层半导体结构,其包含在电介质层上具有电介质层,可变成分Si x 1 Ge 1-x层的衬底和可变组件上的Si覆盖层 组合物Si 1 x 1-x <&gt;层。 可变成分Si x 1 Ge 1-x层可以含有Si x N 1 Ge 1-x层,其中a 分级的Ge含量或多个具有不同Ge含量的Si x 1 Ge 1-x N sub子层。 在本发明的一个实施例中,SiGe薄层半导体结构包含具有电介质层的半导体衬底,介电层上的含Si种子层,可变成分Si x Si -x sub>层,以及可变成分Si x 1 Ge 1-x层上的Si覆盖层。 还提供了一种用于制造SiGe薄层半导体结构的方法和处理工具。
摘要:
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.