公开(公告)号：US10734542B2

公开(公告)日：2020-08-04

申请号：US16688754

申请日：2019-11-19

Applicant: Apple Inc.

Inventor： David P. Bour ,  Dmitry S. Sizov

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/14 ,  H01L33/06 ,  H01L33/02

Abstract: Light emitting diodes are described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.

公开(公告)号：US20200052158A1

公开(公告)日：2020-02-13

申请号：US16547166

申请日：2019-08-21

Applicant: Apple Inc.

Inventor： David P. Bour ,  Dmitry S. Sizov ,  Daniel A. Haeger ,  Xiaobin Xin

IPC: H01L33/14 ,  H01L33/02 ,  H01L33/44 ,  H01L33/62 ,  H01L33/00

Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.

公开(公告)号：US10446712B2

公开(公告)日：2019-10-15

申请号：US16219897

申请日：2018-12-13

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20180292713A1

公开(公告)日：2018-10-11

申请号：US15693305

申请日：2017-08-31

Applicant: Apple Inc.

Inventor： Jean-Jacques P. Drolet ,  Yuan Chen ,  Jonathan S. Steckel ,  Ion Bita ,  Dmitry S. Sizov ,  Chia Hsuan Tai ,  John T. Leonard ,  Lai Wang ,  Ove Lyngnes ,  Xiaobin Xin ,  Zhibing Ge

IPC: G02F1/1335 ,  G02F1/1343

Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.

公开(公告)号：US20180219144A1

公开(公告)日：2018-08-02

申请号：US15842603

申请日：2017-12-14

Applicant: Apple Inc.

Inventor： James Michael Perkins ,  Sergei Y. Yakovenko ,  Dmitry S. Sizov

IPC: H01L33/60 ,  H01L25/075 ,  H01L33/20 ,  H01L33/48 ,  H01L33/42

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/42 ,  H01L33/483 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0091

Abstract: A light emitting structure including mixing cups are described. In an embodiment, a light emitting structure includes a light emitting diode (LED) bonded to a substrate, a diffuser layer adjacent the LED, an angular filter directly over the diffuser layer and the LED, and an overcoat layer directly over the angular filter and the LED.

公开(公告)号：US20240097087A1

公开(公告)日：2024-03-21

申请号：US18450664

申请日：2023-08-16

Applicant: Apple Inc.

Inventor： Justin S. Brockman ,  Fang Ou ,  Lina He ,  Dmitry S. Sizov ,  Lei Zhang

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0093 ,  H01L33/10 ,  H01L2933/0066

Abstract: Optoelectronic structures and methods of formation are described. In an embodiment, an optoelectronic structure includes a backplane with a driving circuitry and an array of contact pads, and a device layer bonded to the backplane. The device layer may include an array of micro-sized diodes and landing pads, and a reconstituted wiring layer including an array of via contacts connected to the array of landing pads. The reconstituted wiring layer can be directly bonded with the array of contacts with metal-metal bonds. A placement distribution of the array of landing can be decoupled from a position distribution of the array of via contacts.

公开(公告)号：US20230018406A1

公开(公告)日：2023-01-19

申请号：US17809785

申请日：2022-06-29

Applicant: Apple Inc.

Inventor： Dmitry S. Sizov ,  Ion Bita ,  Jean-Jacques P. Drolet ,  John T. Leonard ,  Jonathan S. Steckel ,  Nathaniel T. Lawrence ,  Xiaobin Xin ,  Ranojoy Bose

IPC: H01L25/075 ,  H01L23/00 ,  H01L25/16 ,  H01L25/18 ,  H01L33/60

Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.

公开(公告)号：US10714655B2

公开(公告)日：2020-07-14

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US10193013B2

公开(公告)日：2019-01-29

申请号：US15828081

申请日：2017-11-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20160315218A1

公开(公告)日：2016-10-27

申请号：US15199803

申请日：2016-06-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.