公开(公告)号：US20220277936A1

公开(公告)日：2022-09-01

申请号：US17625179

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Yogita PAREEK ,  Darshan THAKARE ,  Prerna Sonthalia GORADIA ,  Ankur KADAM ,  Kevin A. PAPKE

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/56 ,  C23C16/50

Abstract: The present disclosure relates to protective multilayer coatings for processing clumbers and processing clumber components. In one embodiment, a multilayer protean e coating includes a metal nitride layer and an oxide layer disposed thereon. In one embodiment, the multilayer protective coating further includes an oxynitride interlayer and/or an oxy fluoride layer. The multilayer protective coating may be formed on a metal alloy or ceramic substrate, such as a processing clumber or a processing clumber component used in tire field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, the metal nitride layer and the oxide layer are deposited on the substrate by atomic layer deposition.

公开(公告)号：US20200270747A1

公开(公告)日：2020-08-27

申请号：US16791264

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC: C23C16/02 ,  C23C16/513 ,  C23C16/56 ,  C23C16/40

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US20200020511A1

公开(公告)日：2020-01-16

申请号：US16412109

申请日：2019-05-14

Applicant: Applied Materials, Inc.

Inventor： Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Mats LARSSON ,  Kevin A. PAPKE ,  Rajasekhar PATIBANDLA ,  Sathyanarayana BINDIGANAVALE ,  Umesh M. KELKAR

IPC: H01J37/32 ,  C23C28/04

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

公开(公告)号：US20180052104A1

公开(公告)日：2018-02-22

申请号：US15243282

申请日：2016-08-22

Applicant: Applied Materials, Inc.

Inventor： Mats LARSSON ,  Kevin A. PAPKE

IPC: G01N21/64 ,  H01J37/32

CPC classification number: G01N21/64 ,  G01N3/56 ,  G01N2201/06113 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/24592 ,  H01J2237/334

Abstract: The present invention generally relates method and part wear indicator for identifying an eroded chamber component in an etching or other plasma processing chamber. In one embodiment, a chamber component has a part wear indicator. The chamber component has a body. The body has a top surface and a bottom surface. A part wear indicator material is disposed in the chamber component body. The part wear indicator has a body. The body of the part wear indicator has a transparent first layer. A second layer has a tracer material disposed therein and wherein the first layer is closer to the top surface of the top surface than the second layer.

公开(公告)号：US20170299487A1

公开(公告)日：2017-10-19

申请号：US15487213

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Jianqi WANG ,  William Ming-ye LU ,  Yixing LIN ,  Kevin A. PAPKE

IPC: G01N15/02 ,  B08B3/12 ,  G01N15/14

CPC classification number: B08B3/12 ,  G01N1/38 ,  G01N2001/028 ,  G01N2001/383 ,  G01N2015/1486

Abstract: The implementations described herein generally relate to 30 nm in-line liquid particle count testing equipment which analyses and cleans semiconductor processing equipment. More specifically, the implementations described relate to a system for diluting, analyzing, and modifying fluids to enable the observation of the contents of the fluids. A dilution sampling tool is coupled with a liquid particle detector for reading the contents of an extraction solution containing particles from semiconductor processing equipment, such as a liner, a shield, a faceplate, or a showerhead, in a cleaning tank. As such, accurate liquid particle readings may be had which reduce oversaturation of the particle detector.

公开(公告)号：US20170260618A1

公开(公告)日：2017-09-14

申请号：US15451995

申请日：2017-03-07

Applicant: Applied Materials, Inc.

Inventor： Laksheswar KALITA ,  Prerna A. GORADIA ,  Geetika BAJAJ ,  Yogita PAREEK ,  Yixing LIN ,  Dmitry LUBOMIRSKY ,  Ankur KADAM ,  Bipin THAKUR ,  Kevin A. PAPKE ,  Kaushik VAIDYA

IPC: C23C8/12 ,  C22F1/16 ,  C23C8/16 ,  C25D3/54 ,  C25D5/50

CPC classification number: C23C8/12 ,  C22F1/16 ,  C23C8/02 ,  C23C8/16 ,  C25D3/54 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D11/08 ,  C25D11/34

Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.