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    PROFILE CONTROL WITH MULTIPLE INSTANCES OF CONTOL ALGORITHM DURING POLISHING
    11.
    发明申请
    PROFILE CONTROL WITH MULTIPLE INSTANCES OF CONTOL ALGORITHM DURING POLISHING 有权

    公开(公告)号：US20210379722A1

    公开(公告)日：2021-12-09

    申请号：US17341285

    申请日：2021-06-07

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Harry Q. Lee ,  Benjamin Cherian ,  David Maxwell Gage

    IPC: B24B37/005 ,  H01L21/321

    Abstract: During polishing of a stack of adjacent layers, a plurality of instances of a profile control algorithm are executed on a controller with different instances having different values for a control parameter. A first instance receives a sequence of characterizing values from an in-situ monitoring system during an initial time period to control a polishing parameter, and a second instance receives the sequence of characterizing values during the initial time period and a subsequent time period to control the polishing parameter. Exposure of the underlying layer is detected based on the sequence of characterizing values from the in-situ monitoring system.

    USING A TRAINED NEURAL NETWORK FOR USE IN IN-SITU MONITORING DURING POLISHING AND POLISHING SYSTEM
    12.
    发明申请
    USING A TRAINED NEURAL NETWORK FOR USE IN IN-SITU MONITORING DURING POLISHING AND POLISHING SYSTEM 有权

    公开(公告)号：US20210358819A1

    公开(公告)日：2021-11-18

    申请号：US17317501

    申请日：2021-05-11

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Kiran Lall Shrestha ,  Doyle E. Bennett ,  David Maxwell Gage ,  Benjamin Cherian ,  Jun Qian ,  Harry Q. Lee

    IPC: H01L21/66 ,  G06N3/08 ,  G06F17/15 ,  H01L21/304

    Abstract: A method of polishing a substrate includes polishing a conductive layer on the substrate at a polishing station, monitoring the layer with an in-situ eddy current monitoring system to generate a plurality of measured signals values for a plurality of different locations on the layer, generating thickness measurements the locations, and detecting a polishing endpoint or modifying a polishing parameter based on the thickness measurements. The conductive layer is formed of a first material having a first conductivity. Generating includes calculating initial thickness values based on the plurality of measured signals values and processing the initial thickness values through a neural network that was trained using training data acquired by measuring calibration substrates having a conductive layer formed of a second material having a second conductivity that is lower than the first conductivity to generated adjusted thickness values.

    Feedback control using detection of clearance and adjustment for uniform topography
    16.
    发明授权
    Feedback control using detection of clearance and adjustment for uniform topography 有权
    反馈控制使用检测间隙和调整均匀的地形

    公开(公告)号：US09472475B2

    公开(公告)日：2016-10-18

    申请号：US13774843

    申请日：2013-02-22

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Ingemar Carlsson ,  Tzu-Yu Liu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Lakshmanan Karuppiah

    IPC: H01L21/66 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12

    CPC classification number: H01L22/26 ,  B24B37/005 ,  B24B37/04 ,  B24B49/12 ,  H01L22/12

    Abstract: A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

    Abstract translation: 控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的所需比率进行存储。 在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。 基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。 基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。

    Determination of gain for eddy current sensor
    17.
    发明授权
    Determination of gain for eddy current sensor 有权
    确定涡流传感器的增益

    公开(公告)号：US09281253B2

    公开(公告)日：2016-03-08

    申请号：US14066571

    申请日：2013-10-29

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Shih-Haur Shen ,  Boguslaw A. Swedek ,  Ingemar Carlsson ,  Doyle E. Bennett ,  Wen-Chiang Tu ,  Hassan G. Iravani ,  Tzu-Yu Liu

    IPC: G06F19/00 ,  H01L21/66 ,  H01L21/321 ,  B24B37/013 ,  B24B49/10

    CPC classification number: B24B37/013 ,  B24B49/105 ,  H01L21/3212 ,  H01L21/67092 ,  H01L21/67248 ,  H01L22/14 ,  H01L22/26

    Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

    Abstract translation: 控制抛光的方法包括：在第一抛光台处抛光衬底，用第一涡流监测系统监测衬底以产生第一信号，确定第一信号的结束值，以便在第一抛光站抛光衬底 抛光站，确定第一抛光站的第一温度，在第二抛光站抛光衬底，用第二涡流监测系统监测衬底以产生第二信号，确定第二信号的起始值以开始 在所述第二研磨站处抛光所述基板，基于所述结束值，所述起始值和所述第一温度确定所述第二抛光站的增益，以及基于所述第二信号和所述增益来计算第三信号。

    IN-SITU MONITORING SYSTEM WITH MONITORING OF ELONGATED REGION
    18.
    发明申请
    IN-SITU MONITORING SYSTEM WITH MONITORING OF ELONGATED REGION 有权
    监测区域的现场监测系统

    公开(公告)号：US20140127971A1

    公开(公告)日：2014-05-08

    申请号：US13791694

    申请日：2013-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Shih-Haur Shen ,  Tzu-Yu Liu ,  Ingemar Carlsson ,  Hassan G. Iravani ,  Boguslaw A. Swedek ,  Wen-Chiang Tu ,  Doyle E. Bennett

    IPC: B24B37/013

    CPC classification number: B24B37/013 ,  B24B7/228 ,  B24B37/048

    Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

    Abstract translation: 一种化学机械抛光衬底的方法包括在抛光工位上抛光衬底上的层，在抛光站处用抛光工位进行抛光监测层，原位监测系统监测细长区域，并产生一个 计算所述细长区域的主轴与所述衬底的边缘的切线之间的角度，基于所述角度修改所测量的信号以产生修改的信号，以及至少一个检测抛光终点或修改 基于修改信号的抛光参数。

    Compensation for slurry composition in in-situ electromagnetic inductive monitoring
    20.
    发明授权
    Compensation for slurry composition in in-situ electromagnetic inductive monitoring 有权

    公开(公告)号：US11794302B2

    公开(公告)日：2023-10-24

    申请号：US17122819

    申请日：2020-12-15

    Applicant: Applied Materials, Inc.

    Inventor： Kun Xu ,  Andrew Siordia

    IPC: B24B37/005 ,  B24B37/10 ,  B24B37/04 ,  G01B7/06

    CPC classification number: B24B37/005 ,  B24B37/042 ,  B24B37/10 ,  G01B7/10

    Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

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