公开(公告)号：US20140345803A1

公开(公告)日：2014-11-27

申请号：US14455409

申请日：2014-08-08

Applicant: Applied Materials, Inc.

Inventor： Valentin N. TODOROW ,  John P. HOLLAND ,  Michael D. WILLWERTH

IPC: C23F4/00 ,  H01L21/67

CPC classification number: C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Abstract translation: 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。

公开(公告)号：US20240321610A1

公开(公告)日：2024-09-26

申请号：US18676429

申请日：2024-05-28

Applicant: Applied Materials, Inc.

Inventor： Yaoling PAN ,  Patrick John TAE ,  Michael D. WILLWERTH ,  Leonard M. TEDESCHI ,  Daniel Sang BYUN ,  Philip Allan KRAUS ,  Phillip CRIMINALE ,  Changhun LEE ,  Rajinder DHINDSA ,  Andreas SCHMID ,  Denis M. KOOSAU

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  H03K17/955

CPC classification number: H01L21/67259 ,  H01J37/32477 ,  H01J37/3288 ,  H01L22/12 ,  H03K17/955 ,  H01J2237/022

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.

公开(公告)号：US20230102933A1

公开(公告)日：2023-03-30

申请号：US17892211

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Michael D. WILLWERTH ,  Yang YANG

IPC: G03F7/20 ,  G03F7/42

Abstract: Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

公开(公告)号：US20200152431A1

公开(公告)日：2020-05-14

申请号：US16189440

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Changhun LEE ,  Michael D. WILLWERTH ,  Valentin N. TODOROW ,  Hean Cheal LEE ,  Hun Sang KIM

IPC: H01J37/32 ,  G03F7/42

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

公开(公告)号：US20190287758A1

公开(公告)日：2019-09-19

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling PAN ,  Vijaykumar KRITHIVASAN ,  Shimin MAO ,  Kelvin CHAN ,  Michael D. WILLWERTH ,  Anantha SUBRAMANI ,  Ashish GOEL ,  Chih-shun LU ,  Philip Allan KRAUS ,  Patrick John TAE ,  Leonard TEDESCHI

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/31 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US20170345623A1

公开(公告)日：2017-11-30

申请号：US15677929

申请日：2017-08-15

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Bradley HOWARD ,  Shahid RAUF ,  Ajit BALAKRISHNA ,  Tom K. CHOI ,  Kenneth S. COLLINS ,  Anand KUMAR ,  Michael D. WILLWERTH ,  Yogananda SARODE VISHWANATH

IPC: H01J37/32 ,  B29C65/00 ,  B32B1/02 ,  B01D45/08

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US20160135252A1

公开(公告)日：2016-05-12

申请号：US14997529

申请日：2016-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander MATYUSHKIN ,  Dan KATZ ,  John HOLLAND ,  Theodoros PANAGOPOULOS ,  Michael D. WILLWERTH

IPC: H05B3/00 ,  H01L21/67 ,  H01L21/683

CPC classification number: H05B3/0047 ,  B05C13/00 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: A substrate support assembly comprises a ceramic puck having a substrate receiving surface and an opposing backside surface. The ceramic puck has an electrode and a heater embedded therein. The heater comprises first and second coils that are radially spaced apart. A base of the support assembly comprises a channel to circulate fluid therethrough, the channel comprising an inlet and terminus that are adjacent to one another so that the channel loops back upon itself. A compliant layer bonds the ceramic puck to the base.

Abstract translation: 衬底支撑组件包括具有衬底接收表面和相对的背面的陶瓷盘。 陶瓷盘具有嵌入其中的电极和加热器。 加热器包括径向间隔开的第一和第二线圈。 支撑组件的底座包括用于使流体循环通过的通道，该通道包括彼此相邻的入口和末端，使得通道自行回缩。 柔性层将陶瓷盘结合到基座上。