公开(公告)号：US20160086775A1

公开(公告)日：2016-03-24

申请号：US14954622

申请日：2015-11-30

Applicant: Applied Materials, Inc.

Inventor： John C. FORSTER ,  Anantha SUBRAMANI ,  Wei D. WANG

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

Abstract: A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

Abstract translation: 描述了一种用于减少等离子体处理室中的颗粒污染的方法和装置。 在一个实施例中，提供了一种粘贴盘，其包括高电阻率材料的盘形基底，其具有施加到基部的顶表面的导电粘贴材料层，使得粘贴材料层部分地覆盖基底的顶表面 基础。 溅射蚀刻粘贴盘以在等离子体处理室的内表面上的广泛区域上沉积导电粘贴材料，同时最小化用于在衬底处理期间优化溅射蚀刻工艺的介电部件上的沉积。

公开(公告)号：US20200098559A1

公开(公告)日：2020-03-26

申请号：US16695793

申请日：2019-11-26

Applicant: Applied Materials, Inc.

Inventor： Ashish GOEL ,  Anantha SUBRAMANI ,  Maurice E. EWERT

IPC: H01L21/02 ,  C23C16/48 ,  C23C14/54

Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

公开(公告)号：US20150348773A1

公开(公告)日：2015-12-03

申请号：US14410790

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Vivek AGRAWAL ,  Anantha SUBRAMANI ,  Daniel Lee DIEHL ,  Xianmin TANG

IPC: H01L21/02 ,  H01L21/322 ,  H01J37/34 ,  H01L21/3065

CPC classification number: H01L21/0254 ,  C23C14/0036 ,  C23C14/0641 ,  H01J37/3426 ,  H01J37/3467 ,  H01L21/02458 ,  H01L21/02631 ,  H01L21/3065 ,  H01L21/3228

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

Abstract translation: 本文描述的本发明的实施例一般涉及用于形成高质量缓冲层的装置和方法，以及用于形成有用的半导体器件的III-V层，例如功率器件，发光二极管（LED），激光二极管 （LD）或其他有用的装置。 本发明的实施例还可以包括用于形成用于形成有用的半导体器件的高质量缓冲层，III-V族层和电极层的装置和方法。 在一些实施例中，装置和方法包括使用具有一个或多个物理气相沉积（PVD）室的一个或多个簇工具，其适于将具有高结晶取向的高质量氮化铝（AlN）缓冲层沉积在 同时是多个基板的表面。

公开(公告)号：US20190287758A1

公开(公告)日：2019-09-19

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling PAN ,  Vijaykumar KRITHIVASAN ,  Shimin MAO ,  Kelvin CHAN ,  Michael D. WILLWERTH ,  Anantha SUBRAMANI ,  Ashish GOEL ,  Chih-shun LU ,  Philip Allan KRAUS ,  Patrick John TAE ,  Leonard TEDESCHI

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/31 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US20140011354A1

公开(公告)日：2014-01-09

申请号：US13956969

申请日：2013-08-01

Applicant: Applied Materials, Inc.

Inventor： Yu LEI ,  Xinyu FU ,  Anantha SUBRAMANI ,  Seshadri GANGULI ,  Srinivas GANDIKOTA

IPC: H01L21/02

CPC classification number: H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

Abstract translation: 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。