公开(公告)号：US20240170263A1

公开(公告)日：2024-05-23

申请号：US18521948

申请日：2023-11-28

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Vladimir NAGORNY ,  Rene GEORGE

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/0228 ,  H01J2237/334

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

公开(公告)号：US20230207291A1

公开(公告)日：2023-06-29

申请号：US17716419

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Rene GEORGE ,  Tsung-Han YANG ,  David KNAPP ,  Lara HAWRYLCHAK

IPC: H01J37/32 ,  H01L21/02 ,  C23C8/36 ,  C23C8/12

CPC classification number: H01J37/32816 ,  H01L21/02238 ,  H01L21/0223 ,  H01L21/02252 ,  H01J37/3244 ,  H01J37/32357 ,  H01J37/321 ,  C23C8/36 ,  C23C8/12 ,  H01L27/115

Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20190032216A1

公开(公告)日：2019-01-31

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik SHAH ,  Vishwas Kumar PANDEY ,  Kailash PRADHAN ,  Sairaju TALLAVARJULA ,  Rene GEORGE ,  Eric Kihara SHONO ,  Philip A. BOTTINI ,  Roger CURTIS

IPC: C23C16/455

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20240170261A1

公开(公告)日：2024-05-23

申请号：US17991651

申请日：2022-11-21

Applicant: Applied Materials, Inc.

Inventor： Vladimir NAGORNY ,  Rene GEORGE ,  Wei LIU

IPC: H01J37/32

CPC classification number: H01J37/32385 ,  H01J37/32348 ,  H01J37/32568

Abstract: Embodiments of the present disclosure generally relate to a plasma processing apparatus. The plasma processing apparatus includes a processing chamber including a substrate support operable to hold a substrate, a main plasma source coupled with the processing chamber, a plate, a cavity, and an edge plasma generator. The cavity is housed within the plate and spaced radially outward from a dielectric sidewall of the main plasma source.

公开(公告)号：US20240162011A1

公开(公告)日：2024-05-16

申请号：US17987679

申请日：2022-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vladimir NAGORNY ,  Rene GEORGE ,  Vilen K. NESTOROV ,  Martin John RIPLEY ,  Christopher S. OLSEN

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32339 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

公开(公告)号：US20210322934A1

公开(公告)日：2021-10-21

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes F. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00 ,  C23C16/455

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20190105614A1

公开(公告)日：2019-04-11

申请号：US16116531

申请日：2018-08-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes S. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  H01L21/67 ,  B01J8/22

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20180082847A1

公开(公告)日：2018-03-22

申请号：US15822435

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Theresa Kramer GUARINI ,  Huy Q. NGUYEN ,  Malcolm BEVAN ,  Houda GRAOUI ,  Philip A. BOTTINI ,  Bernard L. HWANG ,  Lara HAWRYLCHAK ,  Rene GEORGE

IPC: H01L21/28 ,  H01J37/32 ,  H01L21/3105 ,  H01L29/51

CPC classification number: H01L21/28176 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01L21/3105 ,  H01L29/517

Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

公开(公告)号：US20160358781A1

公开(公告)日：2016-12-08

申请号：US15171001

申请日：2016-06-02

Applicant: Applied Materials, Inc.

Inventor： Wei LIU ,  Theresa Kramer GUARINI ,  Huy Q. NGUYEN ,  Malcolm BEVAN ,  Houda GRAOUI ,  Philip A. BOTTINI ,  Bernard L. HWANG ,  Lara HAWRYLCHAK ,  Rene GEORGE

IPC: H01L21/28 ,  H01L21/67 ,  H01L21/3105

CPC classification number: H01L21/28176 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01L21/3105 ,  H01L29/517

Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

Abstract translation: 本文描述的实施例一般涉及用于等离子体处理处理室的方法和装置。 其上形成有栅极叠层的基板可以放置在处理室中，并且可以使用含氢等离子体来处理栅极堆叠，以便固化栅极堆叠中的缺陷。 作为含氢等离子体处理的结果，栅极堆叠具有较低的泄漏和改进的可靠性。 为了保护处理室免受由含氢等离子体产生的Hx +离子和H *基团的影响，处理室可以用等离子体处理，而不需要将基板放置在其中并且在含氢等离子体处理之前。 此外，由介电材料制成的处理室的部件可以涂覆有包含含钇的氧化物的陶瓷涂层，以保护组分免受等离子体的影响。