公开(公告)号：US20190228942A1

公开(公告)日：2019-07-25

申请号：US16248384

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01J37/20 ,  H01L21/67

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20170088949A1

公开(公告)日：2017-03-30

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Qiwei LIANG ,  Tobin KAUFMAN-OSBORN ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  H01L21/687 ,  C23C16/46

CPC classification number: C23C16/4485 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45517 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US20230407471A1

公开(公告)日：2023-12-21

申请号：US18205415

申请日：2023-06-02

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Agus Sofian TJANDRA ,  Tobin KAUFMAN-OSBORN ,  Taewan KIM ,  Hansel LO

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  C23C16/45548 ,  C23C16/45536 ,  B01F23/19 ,  B01F25/421 ,  C23C16/45561 ,  H01J37/3244 ,  B01F23/10 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F35/511 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US20220411927A1

公开(公告)日：2022-12-29

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Christopher OLSEN ,  Rene GEORGE ,  Eric SHONO ,  Lara HAWRYLCHAK ,  Erika HANSEN ,  Tobin KAUFMAN-OSBORN ,  Hansel LO ,  Kartik SHAH

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

公开(公告)号：US20240170268A1

公开(公告)日：2024-05-23

申请号：US18487432

申请日：2023-10-16

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Hugo RIVERA ,  Wei LIU

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/3211 ,  H01J2237/327

Abstract: A plasma processing system is provided including a processing chamber, one or more optical emission spectroscopy (OES) systems, and a controller. The processing chamber includes a chamber body enclosing a processing volume. The chamber body includes one or more windows. The processing chamber further includes a substrate support in the processing volume, a coil positioned over the substrate support, and one or more actuators configured to move the coil. Each OES system is optically coupled to one of the one or more windows and each OES system having an optical component configured to perform OES measurements on a portion of the processing volume. The controller is configured to adjust a position of the one or more actuators to move the coil based on the OES measurements.

公开(公告)号：US20210074505A1

公开(公告)日：2021-03-11

申请号：US17102051

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01L21/67 ,  H01J37/20

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20190301009A1

公开(公告)日：2019-10-03

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  C23C16/56 ,  C23C16/54 ,  C23C16/455 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20170306491A1

公开(公告)日：2017-10-26

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Adib KHAN ,  Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B05D1/185 ,  B05D1/60 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US20230028054A1

公开(公告)日：2023-01-26

申请号：US17958282

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Kartik SHAH ,  Hansel LO ,  Tobin KAUFMAN-OSBORN ,  Rene GEORGE ,  Lara HAWRYLCHAK ,  Erika HANSEN

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/40 ,  C23C16/52 ,  C23C16/458

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20220353956A1

公开(公告)日：2022-11-03

申请号：US17729715

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Tobin KAUFMAN-OSBORN ,  Samuel C. HOWELLS

IPC: H05B3/02 ,  H05B3/00

Abstract: A window assembly for a thermal processing chamber applicable for thermal processing of a semiconductor substrate is provided. The window assembly includes an upper window, a lower window, and a plurality of linear reflectors disposed between the upper window and the lower window. The plurality of linear reflectors extend lengthwise parallel to each other and parallel to a plane of the window assembly. The window assembly includes a pressure control region defined between the upper window, the lower window, and side surfaces of each linear reflector.