公开(公告)号：US09011973B2

公开(公告)日：2015-04-21

申请号：US13934486

申请日：2013-07-03

Applicant: Applied Materials, Inc.

Inventor： Schubert Chu ,  Er-Xuan Ping ,  Yoshihide Senzaki

IPC: C23C16/40 ,  C23C16/06 ,  C23C16/455 ,  C23C28/00

CPC classification number: C23C16/06 ,  C23C16/40 ,  C23C16/45529 ,  C23C28/00 ,  C23C28/042 ,  C23C28/048 ,  C23C28/42 ,  C23C28/44

Abstract: Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.

Abstract translation: 通过具有预定氧缺乏的至少一种前体在基材上的化学反应沉积缺氧金属膜的方法。 一种示例性方法包括在金属氧化物沉积循环期间，将衬底暴露于包含金属的金属反应物气体和包含氧的氧反应气体，以在衬底上形成含有金属氧化物的层。 在缺氧沉积循环期间，将基底暴露于包含金属和除氧之外的附加反应物气体的金属反应物气体，以在第二循环期间在基板上形成第二层金属氮化物和混合金属中的至少一种， 第二层相对于含有金属氧化物的层是缺氧的; 并且重复金属氧化物沉积循环和缺氧沉积循环以形成具有预定缺氧的缺氧膜。

公开(公告)号：US20240200188A1

公开(公告)日：2024-06-20

申请号：US18590141

申请日：2024-02-28

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11124874B2

公开(公告)日：2021-09-21

申请号：US16561780

申请日：2019-09-05

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Feng Q. Liu ,  Schubert Chu

IPC: C23C16/06 ,  C23C16/455

Abstract: Methods for depositing one or more iridium materials on a surface of a substrate are provided. A method for forming the iridium material (e.g., metallic iridium and/or iridium silicide) on the substrate can include sequentially exposing the substrate to an iridium precursor and a reducing agent during an atomic layer deposition (ALD) process within a process chamber and depositing the iridium material on the substrate. In some examples, the reducing agent can be or include hydrogen gas (H2), a hydrogen plasma, atomic hydrogen, hydrazine or derivatives thereof, or any combination thereof and the deposited iridium material is metallic iridium. In other examples, the reducing agent contains one or more silicon precursors and the iridium material is an iridium silicide.

公开(公告)号：US11021790B2

公开(公告)日：2021-06-01

申请号：US16521826

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： Zhepeng Cong ,  Schubert Chu ,  Nyi O. Myo ,  Kartik Shah ,  Surajit Kumar

IPC: C23C16/44 ,  C30B25/08 ,  C23C16/458 ,  C23C16/46

Abstract: Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.