公开(公告)号：US20240234532A1

公开(公告)日：2024-07-11

申请号：US17925222

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Dongfang WANG ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI ,  Jiayu HE ,  Yan QU ,  Kun ZHAO ,  Jie HUANG ,  Liping LEI ,  Yunsik IM ,  Shunhang ZHANG ,  Nianqi YAO ,  Feifei LI

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/435 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66742

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

公开(公告)号：US20240097042A1

公开(公告)日：2024-03-21

申请号：US17781773

申请日：2021-06-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Nianqi YAO ,  Hehe HU ,  Liping LEI ,  Dongfang WANG ,  Dapeng XUE ,  Shuilang DONG ,  Zhengliang LI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

公开(公告)号：US20230178562A1

公开(公告)日：2023-06-08

申请号：US18103355

申请日：2023-01-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Shuilang DONG ,  Wenhua WANG ,  Nianqi YAO

IPC: H01L27/12

CPC classification number: H01L27/1225

Abstract: A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.

公开(公告)号：US20230036385A1

公开(公告)日：2023-02-02

申请号：US17772689

申请日：2021-06-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

公开(公告)号：US20250089303A1

公开(公告)日：2025-03-13

申请号：US18292558

申请日：2022-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dongfang WANG ,  Zhengliang LI ,  Liping LEI ,  Chen XU

IPC: H01L29/786 ,  G09G3/20 ,  G11C19/28 ,  H01L29/08

Abstract: A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.

公开(公告)号：US20240386864A1

公开(公告)日：2024-11-21

申请号：US18788302

申请日：2024-07-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Xin XIE ,  Yifang HUANG ,  Liping LEI ,  Chen XU

IPC: G09G3/36

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region opposite to each other; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor including a first active layer, the first active layer includes a metal oxide semiconductor material; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor, and the second thin film transistor includes a second active layer, the second active layer includes a metal oxide semiconductor material.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

公开(公告)号：US20230299208A1

公开(公告)日：2023-09-21

申请号：US18322981

申请日：2023-05-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L27/127

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.