公开(公告)号：US08498156B2

公开(公告)日：2013-07-30

申请号：US13554278

申请日：2012-07-20

申请人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

发明人： Gurtej S. Sandhu ,  Bhaskar Srinivasan

IPC分类号： G11C16/04 ,  H01L29/788

CPC分类号： G11C16/0416 ,  G11C16/0483

摘要： Memory cell structures and methods are described herein. One or more memory cells include a transistor having a charge storage node, a dielectric material positioned between the charge storage node and a channel region of the transistor, the channel region positioned between a source region and a drain region, and a first electrode of a diode coupled to the charge storage node.

摘要翻译： 本文描述了存储单元结构和方法。 一个或多个存储单元包括具有电荷存储节点的晶体管，位于电荷存储节点和晶体管的沟道区之间的电介质材料，位于源区和漏区之间的沟道区，以及位于源区和漏区之间的第一电极 耦合到电荷存储节点的二极管。

公开(公告)号：US20130005080A1

公开(公告)日：2013-01-03

申请号：US13608992

申请日：2012-09-10

申请人： John Smythe ,  Bhaskar Srinivasan ,  Ming Zhang

发明人： John Smythe ,  Bhaskar Srinivasan ,  Ming Zhang

IPC分类号： H01L21/26 ,  H01L21/44 ,  H01L21/06

CPC分类号： H01L29/66136 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/823425 ,  H01L21/823814 ,  H01L27/10873 ,  H01L27/24 ,  H01L29/665 ,  H01L29/6659

摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.

摘要翻译： 一些实施例包括在形成半导体结构期间使用微波辐射来激活掺杂剂和/或增加半导体材料的结晶度的方法。 在一些实施例中，微波辐射具有约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过约500℃。

公开(公告)号：US08203179B2

公开(公告)日：2012-06-19

申请号：US12949558

申请日：2010-11-18

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Bhaskar Srinivasan ,  John Smythe

IPC分类号： H01L29/788

CPC分类号： H01L21/31691 ,  H01L21/28273 ,  H01L21/3142 ,  H01L29/42332 ,  H01L29/7881

摘要： Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.

摘要翻译： 公开了诸如具有存储器单元的器件。 存储单元包括由半导体材料形成的有源区; 半导体材料上的第一电介质; 第二电介质，其包括在所述第一电介质上方具有钙钛矿结构的材料; 在所述第二电介质上的第三电介质; 以及位于第三电介质上的栅电极。

公开(公告)号：US08008162B2

公开(公告)日：2011-08-30

申请号：US12274181

申请日：2008-11-19

申请人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

发明人： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC分类号： H01L21/20

CPC分类号： H01L29/88 ,  H01L21/3205 ,  H01L27/1021 ,  Y10S438/957

摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.

摘要翻译： 公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。 开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。 选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。 可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。 存储器件和电子系统包括这样的选择器件。

公开(公告)号：US07941157B2

公开(公告)日：2011-05-10

申请号：US11274584

申请日：2005-11-15

申请人： Bhaskar Srinivasan ,  Sharmila Ravula

发明人： Bhaskar Srinivasan ,  Sharmila Ravula

IPC分类号： H04W24/00 ,  H04L12/28

CPC分类号： H04L41/12 ,  G01S5/0263 ,  G01S5/0289 ,  H04W64/00 ,  H04W84/18

摘要： A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.

摘要翻译： 本文公开了执行该方法的混合定位方法和无线网络。 在混合定位技术的实施例中，网络中的一个或多个传感器节点根据位置区域条件在不同的定位技术之间切换。 该技术为给定的位置区域条件选择最精确的定位技术，因此潜在地为这些条件提供最佳位置精度。 一组代表性的模拟和实验验证了利用混合定位技术的实施方案实现的潜在性能改进。

公开(公告)号：US20110089413A1

公开(公告)日：2011-04-21

申请号：US12580013

申请日：2009-10-15

申请人： Gurtej Sandhu ,  Bhaskar Srinivasan

发明人： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC分类号： H01L29/12 ,  H01L21/329

CPC分类号： H01L29/24 ,  H01L27/24 ,  H01L45/00

摘要： A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

摘要翻译： 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

公开(公告)号：US20100315760A1

公开(公告)日：2010-12-16

申请号：US12483474

申请日：2009-06-12

申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

IPC分类号： H01G4/10

CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

公开(公告)号：US20100258903A1

公开(公告)日：2010-10-14

申请号：US12421916

申请日：2009-04-10

申请人： Bhaskar Srinivasan ,  Vassil Antonov ,  John Smythe

发明人： Bhaskar Srinivasan ,  Vassil Antonov ,  John Smythe

IPC分类号： H01L27/10 ,  B05D5/12

CPC分类号： H01L28/75 ,  C23C16/404 ,  C23C16/409 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/65

摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.

摘要翻译： 钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。 锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。 使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

公开(公告)号：US07613146B2

公开(公告)日：2009-11-03

申请号：US11239836

申请日：2005-09-30

申请人： Arati Manjeshwar ,  Lakshmi Venkatraman ,  Bhaskar Srinivasan

发明人： Arati Manjeshwar ,  Lakshmi Venkatraman ,  Bhaskar Srinivasan

IPC分类号： H04H20/67

CPC分类号： H04W74/0808 ,  H04L1/1803 ,  H04L1/22

摘要： A method for transmitting data from a sender node to a receiver node in a wireless network including (a) sampling a main network frequency and at least one backup frequency, (b) transmitting a message on the main network frequency without using a multiple access protocol, (c) transmitting the message on the main network frequency, using the multiple access protocol exchange, if an acknowledgement is not received, (d) transmitting the message on at least one backup frequency, using a multiple access protocol, if the main network frequency is busy after (c), (e) repeating (c) and (d) for a predefined number of time slots, until an acknowledgement is received, (f) transmitting the message on each backup frequency, using the multiple access protocol, until an acknowledgment is received, and (g) performing an exponential backoff and subsequent transmission of the message if an acknowledgement is still not received after (a) through (f).

摘要翻译： 一种用于在无线网络中从发送方节点向接收方节点发送数据的方法，包括（a）对主网络频率和至少一个备用频率进行采样，（b）在主网络频率上发送消息而不使用多址协议 （c）如果没有接收到确认，则使用多址协议交换在主网络频率上发送消息;（d）使用多址协议在至少一个备份频率上发送消息，如果主网络 频率在（c），（e）中重复（c）和（d）为止，在预定数量的时隙中为止，直到接收到确认为止，（f）使用多址协议在每个备用频率上发送消息， 直到接收到确认，并且（g）如果在（a）到（f）之后仍然没有接收到确认，则执行指数退避和随后的消息传输。

公开(公告)号：US07611790B2

公开(公告)日：2009-11-03

申请号：US11137084

申请日：2005-05-24

申请人： Dirk Lange ,  Wilhelm Frey ,  Bhaskar Srinivasan

发明人： Dirk Lange ,  Wilhelm Frey ,  Bhaskar Srinivasan

IPC分类号： H01M2/08 ,  H01M12/06

CPC分类号： H01M6/5044 ,  H01M6/425 ,  H01M6/44 ,  H01M6/5011 ,  H01M12/06

摘要： A zinc/air battery includes a plurality zinc/air battery cells and an arrangement for exposing the plurality of zinc/air battery cells to air wherein the exposing arrangement opens the plurality of zinc/air battery cells in a serial manner such that only one cell is operative at a time.

摘要翻译： 锌/空气电池包括多个锌/空气电池单元和用于将多个锌/空气电池单元暴露于空气的布置，其中曝光装置以串联方式打开多个锌/空气电池单元，使得仅一个电池 一次操作。