公开(公告)号：US07417271B2

公开(公告)日：2008-08-26

申请号：US11655193

申请日：2007-01-19

Applicant: Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

Inventor： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

IPC: H01L31/062

CPC classification number: H01L27/115 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Abstract translation: 提供具有至少两个氧化物层的电极结构，其更可靠地在不使用附加装置的情况下切换和操作，以及具有该氧化物层的非易失性存储装置。 电极结构可以包括下电极，形成在下电极上的第一氧化物层，形成在第一氧化物层上的第二氧化物层和形成在第二氧化物层上的上电极，其中第一氧化物层和第二氧化物层中的至少一个 可以由电阻变化材料形成。 第一氧化物层可以由具有可变氧化态的氧化物形成。

公开(公告)号：US20070278425A1

公开(公告)日：2007-12-06

申请号：US11882927

申请日：2007-08-07

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G21K5/04

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US07256406B2

公开(公告)日：2007-08-14

申请号：US10962467

申请日：2004-10-13

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G21K5/10

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US07095036B2

公开(公告)日：2006-08-22

申请号：US10795979

申请日：2004-03-10

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

IPC: H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06333

Abstract: An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

Abstract translation: 一种用于提供图案的一对一或一对一投影的电子束光刻设备包括一个与衬底保持架隔开预定距离设置的热电发射器，该热电发射器包括一个具有电介质板的热电板 在其表面上和面对衬底保持器的电介质板上的图案化半导体薄膜，分别用于加热热电发射体的加热源和设置在热电发射器和衬底保持器之外的一对磁体或偏转单元 设置在热电发射器和衬底保持器之间，以控制由热电发射器发射的电子的路径。 在操作中，当热电发射体在真空中被加热时，从热电板的未被图案化半导体薄膜覆盖的部分发射电子。

公开(公告)号：US20050145835A1

公开(公告)日：2005-07-07

申请号：US11057469

申请日：2005-02-15

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

公开(公告)号：US07884410B2

公开(公告)日：2011-02-08

申请号：US11980346

申请日：2007-10-31

Applicant: Chang-wook Moon ,  Joong S. Jeon ,  El Mostafa Bourim ,  Hyun-deok Yang

Inventor： Chang-wook Moon ,  Joong S. Jeon ,  El Mostafa Bourim ,  Hyun-deok Yang

IPC: H01L29/94 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1675 ,  Y10S438/957 ,  Y10S438/958 ,  Y10S977/735 ,  Y10S977/742 ,  Y10S977/943

Abstract: Example embodiments may provide nonvolatile memory devices and example methods of fabricating nonvolatile memory devices. Example embodiment nonvolatile memory devices may include a switching device on a substrate and/or a storage node electrically connected to the switching device. A storage node may include a lower metal layer electrically connected to the switching device, a first insulating layer, a middle metal layer, a second insulating layer, an upper metal layer, a carbon nanotube layer, and/or a passivation layer stacked on the lower metal layer.

Abstract translation: 示例性实施例可以提供非易失性存储器件和制造非易失性存储器件的示例性方法。 示例性实施例非易失性存储器件可以包括电连接到开关器件的衬底和/或存储节点上的开关器件。 存储节点可以包括电连接到开关装置的下金属层，堆叠在开关装置上的第一绝缘层，中间金属层，第二绝缘层，上金属层，碳纳米管层和/或钝化层 下层金属层。

公开(公告)号：US07863142B2

公开(公告)日：2011-01-04

申请号：US12078750

申请日：2008-04-04

Applicant: Chang-wook Moon ,  Hyun-deok Yang ,  Joong S. Jeon ,  Hwa-sung Rhee ,  Nae-in Lee ,  Weiwei Chen

Inventor： Chang-wook Moon ,  Hyun-deok Yang ,  Joong S. Jeon ,  Hwa-sung Rhee ,  Nae-in Lee ,  Weiwei Chen

IPC: H01L21/336

CPC classification number: H01L29/7848 ,  H01L21/28518 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78

Abstract: Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A method of forming a Ge silicide layer according to example embodiments may include forming a metal layer including vanadium (V) on a silicon germanium (SiGe) layer. The metal layer may have a multiple-layer structure and may further include at least one of platinum (Pt) and nickel (Ni). The metal layer may be annealed to form the germanium silicide layer. The annealing may be performed using a laser spike annealing (LSA) method.

公开(公告)号：US08193030B2

公开(公告)日：2012-06-05

申请号：US12929122

申请日：2011-01-03

Applicant: Chang-wook Moon ,  Joong S. Jeon ,  El Mostafa Bourim ,  Hyun-deok Yang

Inventor： Chang-wook Moon ,  Joong S. Jeon ,  El Mostafa Bourim ,  Hyun-deok Yang

IPC: H01L29/861

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  H01L45/1675 ,  Y10S438/957 ,  Y10S438/958 ,  Y10S977/735 ,  Y10S977/742 ,  Y10S977/943

Abstract: Nonvolatile memory devices may be fabricated to include a switching device on a substrate and/or a storage node electrically connected to the switching device. A storage node may include a lower metal layer electrically connected to the switching device, a first insulating layer, a middle metal layer, a second insulating layer, an upper metal layer, a carbon nanotube layer, and/or a passivation layer stacked on the lower metal layer.

Abstract translation: 可以制造非易失性存储器件，以在电连接到开关器件的衬底和/或存储节点上包括开关器件。 存储节点可以包括电连接到开关装置的下金属层，堆叠在开关装置上的第一绝缘层，中间金属层，第二绝缘层，上金属层，碳纳米管层和/或钝化层 下层金属层。

公开(公告)号：US20080164533A1

公开(公告)日：2008-07-10

申请号：US12000494

申请日：2007-12-13

Applicant: Hyun-Deok Yang ,  Chang-wook Moon ,  Joong S. Jeon

Inventor： Hyun-Deok Yang ,  Chang-wook Moon ,  Joong S. Jeon

IPC: H01L29/49 ,  H01L21/44

CPC classification number: H01L29/0847 ,  H01L21/28518 ,  H01L29/66628 ,  H01L29/78

Abstract: Example embodiments relate to a method of manufacturing a germanosilicide and a semiconductor device having the germanosilicide. A method according to example embodiments may include providing a substrate having at least a portion formed of silicon germanium. A metal layer may be formed on the silicon germanium. A thermal process may be performed on the substrate at a relatively high pressure to form the germanosilicide.

Abstract translation: 示例性实施方案涉及制造锗硅酸盐的方法和具有锗硅酸盐的半导体器件。 根据示例性实施例的方法可以包括提供具有由硅锗形成的至少一部分的衬底。 可以在硅锗上形成金属层。 可以在相对较高的压力下在基材上进行热处理以形成硅酸锗。

公开(公告)号：US06835919B2

公开(公告)日：2004-12-28

申请号：US10259393

申请日：2002-09-30

Applicant: Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Chang-wook Moon ,  Hea-young Yoon

Inventor： Yuri Nikolaevich Tolmachev ,  Dong-joon Ma ,  Chang-wook Moon ,  Hea-young Yoon

IPC: H05B102

CPC classification number: H01J37/321 ,  H01J37/32357

Abstract: An inductively coupled plasma apparatus is provided, wherein the inductively coupled plasma apparatus includes a process chamber having a wafer susceptor on which a substrate is installed, a top plasma source chamber which is installed on the process chamber, a reactor, which is installed in the top plasma source chamber, having a channel through which a gas flows, wherein the reactor supplies plasma reaction products to the process chamber, an inductor, having two ends, is installed between the top plasma source chamber and the reactor and is wound around the reactor, an opening which is positioned within a circumferential space in which the inductor is installed between the reactor and the process chamber, and a shutter operable to open and close the opening. Thus, a uniform radial distribution of radicals emanating from a plasma source can be improved.

Abstract translation: 提供一种电感耦合等离子体装置，其中感应耦合等离子体装置包括具有晶片基座的处理室，基板安装在基板上，安装在处理室上的顶部等离子体源室，安装在该处理室中的反应器 顶部等离子体源室具有气体流过的通道，其中反应器向处理室供应等离子体反应产物，具有两端的电感器安装在顶部等离子体源室和反应器之间，并缠绕在反应器 位于电感器安装在反应器和处理室之间的圆周空间内的开口以及可操作以打开和关闭开口的快门。 因此，可以提高从等离子体源发出的自由基的均匀径向分布。