利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

46 条记录 (耗时 0.022 秒)

    High-efficiency light-emitting device and manufacturing method thereof
    13.
    发明授权
    High-efficiency light-emitting device and manufacturing method thereof 有权
    高效发光元件及其制造方法

    公开(公告)号：US08994052B2

    公开(公告)日：2015-03-31

    申请号：US13161835

    申请日：2011-06-16

    申请人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    IPC分类号： H01L33/00 ,  H01L33/58 ,  H01L33/10 ,  H01L33/22

    CPC分类号： H01L33/10 ,  H01L33/22

    摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

    摘要翻译： 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。

    Optoelectronic device and method for manufacturing the same
    14.
    发明授权
    Optoelectronic device and method for manufacturing the same 有权
    光电子器件及其制造方法

    公开(公告)号：US08928026B2

    公开(公告)日：2015-01-06

    申请号：US13565993

    申请日：2012-08-03

    申请人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    发明人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/20

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译： 光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及 与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。

    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
    19.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    光电装置及其制造方法

    公开(公告)号：US20130032848A1

    公开(公告)日：2013-02-07

    申请号：US13565993

    申请日：2012-08-03

    申请人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    发明人： Chao-Hsing Chen ,  Chien-Fu Shen ,  Schang-Jing Hon ,  Tsun-Kai Ko ,  Wei-Yo Chen

    IPC分类号： H01L33/48

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An optoelectronic device comprises a semiconductor stack comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode electrically connecting with the first semiconductor layer, a second electrode electrically connecting with the second semiconductor layer, wherein there is a smallest distance D1 between the first electrode and the second electrode, a third electrode formed on a portion of the first electrode and electrically connecting with the first electrode and a fourth electrode formed on a portion of the first electrode and on a portion of the second electrode, and electrically connecting with the second electrode, wherein there is a smallest distance D2 between the third electrode and the fourth electrode, and the smallest distance D2 is smaller than the smallest distance D1.

    摘要翻译： 光电子器件包括半导体堆叠，其包括第一半导体层，有源层和第二半导体层，与第一半导体层电连接的第一电极，与第二半导体层电连接的第二电极，其中存在最小距离 D1在第一电极和第二电极之间形成，第三电极形成在第一电极的一部分上并与第一电极电连接，第四电极形成在第一电极的一部分上并在第二电极的一部分上，以及 与第二电极电连接，其中在第三电极和第四电极之间具有最小距离D2，并且最小距离D2小于最小距离D1。