Abstract:
An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.
Abstract:
A circuit board including a first dielectric layer having a first surface and a second surface, a first circuit layer, a second dielectric layer, and a second circuit layer is provided. At least one trench is formed on the first surface, and the first circuit layer is formed on an inside wall of the trench. In addition, the second dielectric layer is disposed in the trench, and covers the first circuit layer. The second circuit layer is disposed in the trench, and the second dielectric layer is located between the first circuit layer and the second circuit layer. A manufacturing method of the circuit board is further provided.
Abstract:
An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.
Abstract:
A method for fabricating an image sensor, which includes the following steps, is provided. A semiconductor substrate including a sensor array, a pad and a passivation layer is provided, and the passivation layer covers the sensor array and the pad. An opening, which comprises tapered sidewalls not perpendicular to a bared surface of the pad, is formed in the semiconductor substrate to expose the pad. An under layer is formed on the semiconductor substrate, and covers the pad and the passivation layer. A color filter array is formed on the under layer and over the corresponding sensor array. A planar layer is formed on the color filter array. A portion of the under layer is removed to expose the pad. A plurality of U-lenses is formed on the planar layer.
Abstract:
A wafer for manufacturing image sensors is disclosed. The wafer includes an image sensor and a test key. The image sensor includes a plurality of micro-lenses; the test key includes a plurality of micro-lens samples for defects inspection. The arrangement of the micro-lens samples on the test key is substantially different from the arrangement of the micro-lenses on the image sensor. The arrangement of the micro-lens samples on the test key allows defects inspection to become less complicated.
Abstract:
The present invention provides a method of making a molded interconnect device. The method includes the steps of: injection molding a plastic body having thereon at least one patterned circuit trench structure; and filling a conductive material into the patterned circuit trench structure thereby forming a circuit trace on the plastic body.
Abstract:
The present invention provides a method of making a molded interconnect device. The method includes the steps of: injection molding a plastic body having thereon at least one patterned circuit trench structure; and filling a conductive material into the patterned circuit trench structure thereby forming a circuit trace on the plastic body.
Abstract:
A method for fabricating an image sensor is disclosed. First, a semiconductor substrate is provided, in which a photosensitive region is defined on the semiconductor substrate. At least one photosensitive material is then formed on the semiconductor substrate, and a first exposure process is performed to form a tapered pattern in the photosensitive material. A second exposure process is performed to form a straight foot pattern in the photosensitive material, and a developing process is performed to remove the tapered pattern and straight foot pattern to form the photosensitive material into a plurality of photosensitive blocks. A reflow process is conducted thereafter to form the photosensitive blocks into a plurality of microlenses.