摘要:
A semiconductor device is provided. The semiconductor device comprises an epitaxial layer disposed on a semiconductor substrate, a plurality of electronic devices disposed on the epitaxial layer and a trench isolation structure disposed between the electric devices. The trench isolation structure comprises a trench in the epitaxial layer and the semiconductor substrate, an oxide liner on the sidewall and bottom of the trench, and a doped polysilicon layer filled in the trench. Moreover, a zero bias voltage can be applied to the doped polysilicon layer. The trench isolation structure can be used for isolating electronic devices having different operation voltages or high-voltage devices.
摘要:
A method for fabricating a semiconductor device for preventing a poisoned via is provided. A substrate with a conductive layer formed thereon is provided. A composite layer is formed over the substrate and the conductive layer, wherein the composite layer comprises a dielectric layer and a spin-on-glass layer. A via hole is formed through the composite layer, wherein the via hole exposes a surface of the conductive layer. A protection layer is formed on a sidewall of the via hole so as to prevent out-gassing from the spin-on-glass layer. A barrier layer is formed on the protection layer and the conductive layer within the via hole. And a metal layer is deposited on the barrier layer within the via hole to fill the via hole.
摘要:
A gate process and a gate process for an embedded memory device. A semiconductor silicon substrate has a memory cell area and a logic circuit area. A first dielectric layer is formed overlying the semiconductor silicon substrate, and then a gate structure is formed overlying the first dielectric layer of the memory cell area. Next, a protective layer is formed overlying the first dielectric layer and the top and sidewall of the gate structure. Next, an insulating spacer is formed overlying the protective layer disposed overlying the sidewall of the gate structure. Next, a pre-cleaning process is performed to remove the protective layer and the first dielectric layer overlying the logic circuit area. Next, a second dielectric layer is formed overlying the logic circuit area, and then a gate layer is formed overlying the second dielectric layer of the logic circuit area.
摘要:
A multi-winding high step-up DC-DC converter includes a three-winding transformer to transform a low DC voltage to a high DC voltage; a power switch to control the energy flux of the primary winding of the three-winding transformer based on turning on/off the power switch; a first diode to control the current of the first secondary winding of the three-winding transformer; a second diode to control the current of the second secondary winding of the three-winding transformer; and a third diode to control the current of the primary winding. When the DC-DC converter is in the first operation state, the switch and the second diode are in on state, and the first and the third diodes are in off state. When the DC-DC converter is in the second operation state, the switch and the second diode are in off state, and the first and the third diodes are in on state.
摘要:
The invention provides an antiglare film. A resin layer is disposed on a substrate. Micro-aggregates are distributed in an interior and over a surface of the resin layer. Each of the micro aggregates has a size of 0.1-3 μm and is formed by aggregating aggregated nano-particles. The micro-aggregates distributing over the surface result in a surface roughness of the resin layer. The weight ratio of the resin layer to the micro-aggregates is 1:0.1-0.7.
摘要:
A protective film for a polarizer. An exemplary polarizer protective film includes a transparent resin with nanoscale particles dispersed therein, having an average diameter not exceeding 50 nanometers.
摘要:
The invention relates to a lamp frequency control system for a display and method for controlling the lamp frequency. The lamp frequency control system comprises a driving control device and a lamp frequency control device. The driving control device has a driving mode selector for selecting a driving mode from at least two driving modes. According to the selected driving mode, the driving mode selector outputs at least one corresponding frequency control signal. According to the corresponding frequency control signal, the lamp frequency control device obtains at least one corresponding lamp frequency. According to the various driving mode, the lamp frequency control system of the invention obtains the corresponding lamp frequency. That is, the lamp frequency can be adjusted to match the driving mode. Therefore, the lamp frequency can be adjusted at a frequency section without the water flow interference. The lamp frequency control system of the invention can resolve the water flow interference.
摘要:
A method of real-time monitoring the variation of dye solution in the process of a polarizer is provided that an ion chromatography is utilized to measure the variation of a reduction in the dye solution and analyze the components therein; moreover, an ion meter is utilized to measure the concentration of the dye solution.
摘要:
The invention relates to a lamp frequency control system for a display and method for controlling the lamp frequency. The lamp frequency control system comprises a driving control device and a lamp frequency control device. The driving control device has a driving mode selector for selecting a driving mode from at least two driving modes. According to the selected driving mode, the driving mode selector outputs at least one corresponding frequency control signal. According to the corresponding frequency control signal, the lamp frequency control device obtains at least one corresponding lamp frequency. According to the various driving mode, the lamp frequency control system of the invention obtains the corresponding lamp frequency. That is, the lamp frequency can be adjusted to match the driving mode. Therefore, the lamp frequency can be adjusted at a frequency section without the water flow interference. The lamp frequency control system of the invention can resolve the water flow interference.
摘要:
A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.