SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF
    11.
    发明申请
    SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20100181639A1

    公开(公告)日:2010-07-22

    申请号:US12356036

    申请日:2009-01-19

    IPC分类号: H01L23/58 H01L21/76

    摘要: A semiconductor device is provided. The semiconductor device comprises an epitaxial layer disposed on a semiconductor substrate, a plurality of electronic devices disposed on the epitaxial layer and a trench isolation structure disposed between the electric devices. The trench isolation structure comprises a trench in the epitaxial layer and the semiconductor substrate, an oxide liner on the sidewall and bottom of the trench, and a doped polysilicon layer filled in the trench. Moreover, a zero bias voltage can be applied to the doped polysilicon layer. The trench isolation structure can be used for isolating electronic devices having different operation voltages or high-voltage devices.

    摘要翻译: 提供半导体器件。 半导体器件包括设置在半导体衬底上的外延层,设置在外延层上的多个电子器件和设置在电气器件之间的沟槽隔离结构。 沟槽隔离结构包括在外延层和半导体衬底中的沟槽,沟槽的侧壁和底部上的氧化物衬垫以及填充在沟槽中的掺杂多晶硅层。 此外,零偏压可以施加到掺杂多晶硅层。 沟槽隔离结构可以用于隔离具有不同操作电压的电子器件或高压器件。

    Gate process and gate structure for an embedded memory device

    公开(公告)号:US20050042811A1

    公开(公告)日:2005-02-24

    申请号:US10951763

    申请日:2004-09-29

    摘要: A gate process and a gate process for an embedded memory device. A semiconductor silicon substrate has a memory cell area and a logic circuit area. A first dielectric layer is formed overlying the semiconductor silicon substrate, and then a gate structure is formed overlying the first dielectric layer of the memory cell area. Next, a protective layer is formed overlying the first dielectric layer and the top and sidewall of the gate structure. Next, an insulating spacer is formed overlying the protective layer disposed overlying the sidewall of the gate structure. Next, a pre-cleaning process is performed to remove the protective layer and the first dielectric layer overlying the logic circuit area. Next, a second dielectric layer is formed overlying the logic circuit area, and then a gate layer is formed overlying the second dielectric layer of the logic circuit area.

    Multi-winding high step-up DC-DC converter
    14.
    发明申请
    Multi-winding high step-up DC-DC converter 审中-公开
    多绕组高升压DC-DC转换器

    公开(公告)号:US20110292690A1

    公开(公告)日:2011-12-01

    申请号:US13064650

    申请日:2011-04-06

    IPC分类号: H02M3/335

    CPC分类号: H02M3/155

    摘要: A multi-winding high step-up DC-DC converter includes a three-winding transformer to transform a low DC voltage to a high DC voltage; a power switch to control the energy flux of the primary winding of the three-winding transformer based on turning on/off the power switch; a first diode to control the current of the first secondary winding of the three-winding transformer; a second diode to control the current of the second secondary winding of the three-winding transformer; and a third diode to control the current of the primary winding. When the DC-DC converter is in the first operation state, the switch and the second diode are in on state, and the first and the third diodes are in off state. When the DC-DC converter is in the second operation state, the switch and the second diode are in off state, and the first and the third diodes are in on state.

    摘要翻译: 多绕组高升压DC-DC转换器包括一个三绕组变压器,用于将低直流电压转换成高直流电压; 电源开关,用于控制三绕组变压器的初级绕组的能量通量,其基于电源开关的接通/断开; 用于控制三绕组变压器的第一次级绕组的电流的第一二极管; 用于控制三绕组变压器的第二次级绕组的电流的第二二极管; 以及用于控制初级绕组的电流的第三二极管。 当DC-DC转换器处于第一操作状态时,开关和第二二极管处于导通状态,第一和第三二极管处于断开状态。 当DC-DC转换器处于第二操作状态时,开关和第二二极管处于截止状态,第一和第三二极管处于导通状态。

    Antiglare film and manufacturing method thereof
    15.
    发明授权
    Antiglare film and manufacturing method thereof 有权
    防斜纹薄膜及其制造方法

    公开(公告)号:US07854522B2

    公开(公告)日:2010-12-21

    申请号:US12402150

    申请日:2009-03-11

    IPC分类号: G02B1/11 B05D5/06

    摘要: The invention provides an antiglare film. A resin layer is disposed on a substrate. Micro-aggregates are distributed in an interior and over a surface of the resin layer. Each of the micro aggregates has a size of 0.1-3 μm and is formed by aggregating aggregated nano-particles. The micro-aggregates distributing over the surface result in a surface roughness of the resin layer. The weight ratio of the resin layer to the micro-aggregates is 1:0.1-0.7.

    摘要翻译: 本发明提供防眩膜。 树脂层设置在基板上。 微聚集体分布在树脂层的内部和表面上。 每个微聚集体具有0.1-3μm的尺寸,并且通过聚集聚集的纳米颗粒形成。 分布在表面上的微团聚体导致树脂层的表面粗糙度。 树脂层与微团聚体的重量比为1:0.1-0.7。

    Lamp frequency control system for display and method for controlling lamp frequency
    17.
    发明授权
    Lamp frequency control system for display and method for controlling lamp frequency 失效
    显示灯频率控制系统及控制灯频率的方法

    公开(公告)号:US07456816B2

    公开(公告)日:2008-11-25

    申请号:US11101169

    申请日:2005-04-07

    申请人: Shih-Ming Chen

    发明人: Shih-Ming Chen

    IPC分类号: G09G3/36

    摘要: The invention relates to a lamp frequency control system for a display and method for controlling the lamp frequency. The lamp frequency control system comprises a driving control device and a lamp frequency control device. The driving control device has a driving mode selector for selecting a driving mode from at least two driving modes. According to the selected driving mode, the driving mode selector outputs at least one corresponding frequency control signal. According to the corresponding frequency control signal, the lamp frequency control device obtains at least one corresponding lamp frequency. According to the various driving mode, the lamp frequency control system of the invention obtains the corresponding lamp frequency. That is, the lamp frequency can be adjusted to match the driving mode. Therefore, the lamp frequency can be adjusted at a frequency section without the water flow interference. The lamp frequency control system of the invention can resolve the water flow interference.

    摘要翻译: 本发明涉及一种用于显示的灯频率控制系统和用于控制灯频率的方法。 灯频率控制系统包括驱动控制装置和灯频率控制装置。 驱动控制装置具有用于从至少两种驱动模式选择驱动模式的驱动模式选择器。 根据所选择的驱动模式,驱动模式选择器输出至少一个对应的频率控制信号。 根据相应的频率控制信号,灯频率控制装置获得至少一个对应的灯频率。 根据各种驱动模式,本发明的灯频控制系统获得相应的灯频率。 也就是说,可以调节灯频率以匹配驾驶模式。 因此,可以在没有水流干扰的频率部分调节灯频率。 本发明的灯频控制系统可以解决水流干扰。

    Lamp frequency control system for display and method for controlling lamp frequency
    19.
    发明申请
    Lamp frequency control system for display and method for controlling lamp frequency 失效
    显示灯频率控制系统及控制灯频率的方法

    公开(公告)号:US20050258780A1

    公开(公告)日:2005-11-24

    申请号:US11101169

    申请日:2005-04-07

    申请人: Shih-Ming Chen

    发明人: Shih-Ming Chen

    摘要: The invention relates to a lamp frequency control system for a display and method for controlling the lamp frequency. The lamp frequency control system comprises a driving control device and a lamp frequency control device. The driving control device has a driving mode selector for selecting a driving mode from at least two driving modes. According to the selected driving mode, the driving mode selector outputs at least one corresponding frequency control signal. According to the corresponding frequency control signal, the lamp frequency control device obtains at least one corresponding lamp frequency. According to the various driving mode, the lamp frequency control system of the invention obtains the corresponding lamp frequency. That is, the lamp frequency can be adjusted to match the driving mode. Therefore, the lamp frequency can be adjusted at a frequency section without the water flow interference. The lamp frequency control system of the invention can resolve the water flow interference.

    摘要翻译: 本发明涉及一种用于显示的灯频率控制系统和用于控制灯频率的方法。 灯频控制系统包括驱动控制装置和灯频控制装置。 驱动控制装置具有用于从至少两种驱动模式选择驱动模式的驱动模式选择器。 根据所选择的驱动模式,驱动模式选择器输出至少一个对应的频率控制信号。 根据相应的频率控制信号,灯频率控制装置获得至少一个对应的灯频率。 根据各种驱动模式,本发明的灯频控制系统获得相应的灯频率。 也就是说,可以调节灯频率以匹配驾驶模式。 因此,可以在没有水流干扰的频率部分调节灯频率。 本发明的灯频控制系统可以解决水流干扰。

    Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor
    20.
    发明授权
    Thermal treatment process for forming thin film transistors without the use of plasma treatment to further improve the output property of the thin film transistor 有权
    用于在不使用等离子体处理的情况下形成薄膜晶体管的热处理工艺,以进一步提高薄膜晶体管的输出特性

    公开(公告)号:US06548332B2

    公开(公告)日:2003-04-15

    申请号:US09838917

    申请日:2001-04-20

    IPC分类号: H01L2100

    CPC分类号: H01L29/78669 H01L29/66765

    摘要: A process for forming a thin film transistor includes steps of (a) forming a gate on a portion of a substrate, (b) forming a gate dielectric layer, a semiconductor layer, a source, a drain, and a passivation in order on the substrate, and (c) proceeding a thermal treatment under atmosphere of a specific assistant gas. The specific assistant gas is one selected from a group consisting of hydrogen, steam, inert gases, and gas mixtures thereof. After providing the specific assistant gas during the thermal treatment, the process can improve the output property of the thin film transistor for avoiding double hump phenomenon.

    摘要翻译: 一种用于形成薄膜晶体管的工艺包括以下步骤:(a)在衬底的一部分上形成栅极,(b)依次形成栅介质层,半导体层,源极,漏极和钝化层 底物,(c)在特定辅助气体的气氛下进行热处理。 特定的辅助气体是选自氢,蒸气,惰性气体及其气体混合物的一组。 在热处理过程中提供特定的辅助气体之后,可以提高薄膜晶体管的输出特性,避免双峰现象。