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    Method of forming high etch resistant resist patterns
    12.
    发明授权
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US07531296B2

    公开(公告)日：2009-05-12

    申请号：US11209684

    申请日：2005-08-24

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F7/405

    Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

    Method for forming a lithography pattern
    13.
    发明授权
    Method for forming a lithography pattern 有权
    光刻图案的形成方法

    公开(公告)号：US07482280B2

    公开(公告)日：2009-01-27

    申请号：US11426233

    申请日：2006-06-23

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

    IPC: H01L21/302 ,  G03F7/00

    CPC classification number: G03F7/40 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/3081 ,  H01L21/3086

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate, the first material layer being substantially free of silicon, and forming a patterned resist layer including at least one opening therein above the first material layer. A second material layer containing silicon is formed on the patterned resist layer and an opening is formed in the first material layer using the second material layer as a mask.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层，第一材料层基本上不含硅，并且在第一材料层上方形成包括至少一个开口的图案化抗蚀剂层。 在图案化的抗蚀剂层上形成含有硅的第二材料层，并且使用第二材料层作为掩模在第一材料层中形成开口。

    Method and System For Making Photo-Resist Patterns
    15.
    发明申请
    Method and System For Making Photo-Resist Patterns 审中-公开
    制作防光图案的方法和系统

    公开(公告)号：US20080102648A1

    公开(公告)日：2008-05-01

    申请号：US11555558

    申请日：2006-11-01

    Applicant: Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

    Inventor： Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

    IPC: H01L21/302 ,  G03G13/10

    CPC classification number: H01L21/0271 ,  G03F7/095

    Abstract: A method of forming a resist pattern in a semiconductor device layer includes forming a buffer layer on a semiconductor device layer and forming a resist layer on the buffer layer. A decomposing agent is released into a portion of the buffer layer by a portion of the resist layer whereupon the portion of the buffer layer and the portion of the resist layer are removed to form a process window substantially free of resist residue that can be subsequently exploited for etching of the semiconductor device layer.

    Abstract translation: 在半导体器件层中形成抗蚀剂图案的方法包括在半导体器件层上形成缓冲层，并在缓冲层上形成抗蚀剂层。 分解剂通过抗蚀剂层的一部分释放到缓冲层的一部分中，随后缓冲层的部分和抗蚀剂层的一部分被去除以形成基本上不含抗蚀剂残留物的工艺窗口，其可以被随后利用 用于蚀刻半导体器件层。

    Megasonic immersion lithography exposure apparatus and method
    16.
    发明授权
    Megasonic immersion lithography exposure apparatus and method 有权
    超声波浸没式光刻曝光装置及方法

    公开(公告)号：US07224427B2

    公开(公告)日：2007-05-29

    申请号：US10910480

    申请日：2004-08-03

    Applicant: Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    Inventor： Ching-Yu Chang ,  Chien-Hung Lin ,  Chin-Hsiang Lin ,  David Lu ,  Horng-Huei Tseng ,  Burn-Jeng Lin

    IPC: G03B27/52

    CPC classification number: G03F7/70341

    Abstract: A megasonic immersion lithography exposure apparatus and method for substantially eliminating microbubbles from an exposure liquid in immersion lithography is disclosed. The apparatus includes an optical system for projecting light through a mask and onto a wafer.An optical transfer chamber is provided adjacent to the optical system for containing an exposure liquid. At least one megasonic plate operably engages the optical transfer chamber for inducing sonic waves in and eliminating microbubbles from the exposure liquid.

    Abstract translation: 公开了一种用于在浸没式光刻中基本上消除曝光液体中的微泡的兆声浸没式光刻曝光装置和方法。 该装置包括用于通过掩模将光投射到晶片上的光学系统。 光学传递室邻近光学系统设置，用于容纳曝光液体。 至少一个兆欧表板可操作地接合光学传递室，用于在曝光液体中引入声波并消除微泡。

    Immersion lithography defect reduction
    17.
    发明申请
    Immersion lithography defect reduction 审中-公开
    浸没光刻缺陷减少

    公开(公告)号：US20070002296A1

    公开(公告)日：2007-01-04

    申请号：US11384624

    申请日：2006-03-20

    Applicant: Ching-Yu Chang ,  Vincent Yu ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Vincent Yu ,  Chin-Hsiang Lin

    IPC: G03B27/42

    CPC classification number: G03F7/70341

    Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to remove the remaining portion of fluid from the resist layer. After treatment, a post-exposure bake and a development step are used.

    Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。 曝光后，使用处理工艺从抗蚀剂层中除去剩余部分的流体。 处理后，使用曝光后烘烤和显影步骤。

    System and method for photolithography in semiconductor manufacturing
    18.
    发明申请
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号：US20060172520A1

    公开(公告)日：2006-08-03

    申请号：US11050312

    申请日：2005-02-03

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Lin

    IPC: H01L21/4763 ,  H01L21/3205

    CPC classification number: H01L21/76802 ,  H01L21/31144

    Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

    Photoresist materials and photolithography processes
    19.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    Applicant: Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    Inventor： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC: G03B27/52 ,  G03B27/42

    CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    Abstract: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    Abstract translation: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

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