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    Methods and apparatuses for testing a sleep support member
    11.
    发明授权
    Methods and apparatuses for testing a sleep support member 有权
    用于测试睡眠支持构件的方法和装置

    公开(公告)号：US08770020B2

    公开(公告)日：2014-07-08

    申请号：US12867723

    申请日：2009-02-13

    申请人： Robert D. Oexman ,  David B. Scott

    发明人： Robert D. Oexman ,  David B. Scott

    IPC分类号： A61B5/103

    CPC分类号： G01N3/32 ,  A47C31/123 ,  G01N2203/0019 ,  G01N2203/0226 ,  G01N2203/0246

    摘要： Systems and methods for testing a sleep support member. A system including at least one pressing structure, wherein the at least one pressing structure includes at least one of a heater and a moisture device; and a controller configured to control pressing of the pressing structure onto the sleep support member, wherein the controller is configured to control at least one of heat provided by the heater and moisture provided by the moisture device. A method including controlling pressing of at least one pressing structure onto a sleep support member, wherein the at least one pressing structure includes at least one of a heater and a moisture device; and controlling at least one of heat provided by the heater and moisture provided by the moisture device.

    摘要翻译： 用于测试睡眠支持成员的系统和方法。 一种包括至少一个按压结构的系统，其中所述至少一个按压结构包括加热器和湿气装置中的至少一个; 以及控制器，其被配置为控制所述按压结构到所述睡眠支撑构件上的按压，其中所述控制器构造成控制由所述加热器提供的热量和由所述湿气装置提供的湿气中的至少一个。 一种方法，包括控制至少一个按压结构到睡眠支撑构件上的按压，其中所述至少一个按压结构包括加热器和湿气装置中的至少一个; 以及控制由加热器提供的热量和由湿气装置提供的湿气中的至少一种。

    Apparatuses and methods providing variable support and variable comfort control of a sleep system and automatic adjustment thereof
    12.
    发明授权
    Apparatuses and methods providing variable support and variable comfort control of a sleep system and automatic adjustment thereof 有权
    提供睡眠系统的可变支持和可变舒适度控制的装置和方法及其自动调整

    公开(公告)号：US08341786B2

    公开(公告)日：2013-01-01

    申请号：US12867690

    申请日：2008-11-14

    申请人： Robert D. Oexman ,  David B. Scott

    发明人： Robert D. Oexman ,  David B. Scott

    IPC分类号： A61B5/00

    CPC分类号： A47C27/083 ,  A47C23/0433 ,  A47C23/0435 ,  A47C23/047 ,  A47C27/082 ,  A47C27/088 ,  A47C27/10 ,  A47C31/123 ,  A61B5/4815 ,  A61B5/6892

    摘要： An apparatus and method providing variable support and variable comfort control of a sleep system, the apparatus including a sleep support member including: a comfort layer including: a plurality of comfort layer inflatable members; and a comfort layer sensor configured to provide data relating to respective pressures of the comfort layer inflatable members; a data analysis unit configured to analyze data provided by the comfort layer sensor and to generate analyzed comfort layer data; and a control unit configured to control a pressure within each of the respective comfort layer inflatable members using the analyzed comfort layer data.

    摘要翻译： 一种提供睡眠系统的可变支撑和可变舒适度控制的装置和方法，所述装置包括睡眠支撑构件，所述睡眠支撑构件包括：舒适层，包括：多个舒适层可充气构件; 以及舒适层传感器，被配置为提供与所述舒适层可充气构件的相应压力有关的数据; 数据分析单元，被配置为分析由所述舒适层传感器提供的数据并生成分析的舒适层数据; 以及控制单元，其被配置为使用分析的舒适层数据来控制各个舒适层可充气构件的每一个内的压力。

    METHODS AND APPARATUSES FOR PROVIDING A SLEEP SYSTEM HAVING CUSTOMIZED ZONED SUPPORT AND ZONED COMFORT
    13.
    发明申请
    METHODS AND APPARATUSES FOR PROVIDING A SLEEP SYSTEM HAVING CUSTOMIZED ZONED SUPPORT AND ZONED COMFORT 审中-公开
    提供具有自定义分区支持和区域舒适性的休眠系统的方法和装置

    公开(公告)号：US20110010249A1

    公开(公告)日：2011-01-13

    申请号：US12933604

    申请日：2009-03-20

    申请人： Robert D. Oexman ,  David B. Scott

    发明人： Robert D. Oexman ,  David B. Scott

    IPC分类号： A47C23/04 ,  A47C27/00 ,  G06Q30/00

    CPC分类号： A47C31/123 ,  A47C27/064 ,  G06Q30/0269

    摘要： A sleep support member and a method for recommending a sleep support member to a person. The sleep support member includes: a support layer including a plurality of support zones; and a comfort layer including a plurality of comfort zones, wherein the comfort layer is disposed above the support layer. Each of the support zones is configured to provide customized support characteristics to a corresponding region of a person's body and each of the comfort zones is configured to provide customized comfort characteristics to a corresponding region of the person's body.

    摘要翻译： 睡眠支持成员和用于向人推荐睡眠支持成员的方法。 睡眠支撑构件包括：支撑层，包括多个支撑区域; 以及包括多个舒适区域的舒适层，其中舒适层设置在支撑层上方。 每个支撑区域被配置为向人体的对应区域提供定制的支撑特征，并且每个舒适区域被配置为向人体的相应区域提供定制的舒适特性。

    APPARATUSES AND METHODS FOR SINGLE-SIDED ZONED MATTRESS ROTATION
    15.
    发明申请
    APPARATUSES AND METHODS FOR SINGLE-SIDED ZONED MATTRESS ROTATION 审中-公开
    用于单面区域分层旋转的装置和方法

    公开(公告)号：US20100319136A1

    公开(公告)日：2010-12-23

    申请号：US12867739

    申请日：2009-02-13

    申请人： David B. Scott ,  Robert D. Oexman

    发明人： David B. Scott ,  Robert D. Oexman

    IPC分类号： A47C27/10 ,  A47C27/08

    CPC分类号： A47C27/10 ,  A47C27/082 ,  A47C27/083

    摘要： A sleep support system including: a sleep support member having an inflatable member, wherein the inflatable member communicates with a first connector and a second connector, and a control unit having a terminal; wherein the terminal is configured to be connected to the first connector, if the sleep support member is in a first position, and wherein the terminal is configured to be connected to the second connector, if the sleep support member is rotated to a second position. Accordingly, a sleep support member having zoned support characteristics can be conveniently rotated without losing the proper zoned effect.

    摘要翻译： 一种睡眠支撑系统，包括：具有可膨胀构件的睡眠支撑构件，其中所述可充气构件与第一连接器和第二连接器连通，以及具有终端的控制单元; 其中，如果所述睡眠支撑构件处于第一位置，则所述终端被配置为连接到所述第一连接器，并且其中所述终端被配置为连接到所述第二连接器，如果所述睡眠支撑构件旋转到第二位置。 因此，具有分区的支撑特征的睡眠支撑构件可以方便地旋转而不失去适当的分区效果。

    Fast access memory architecture
    16.
    发明授权
    Fast access memory architecture 有权
    快速访问内存架构

    公开(公告)号：US07376038B2

    公开(公告)日：2008-05-20

    申请号：US11385151

    申请日：2006-03-21

    申请人： Sudha Thiruvengadam ,  Ramaprasath Vilangudipitchai ,  David B. Scott ,  Uming U. Ko ,  Alice Wang

    发明人： Sudha Thiruvengadam ,  Ramaprasath Vilangudipitchai ,  David B. Scott ,  Uming U. Ko ,  Alice Wang

    IPC分类号： G11C5/14

    CPC分类号： G11C8/10

    摘要： A computer system including a control logic and a storage coupled to the control logic. The storage includes a plurality of bitcells and bitlines used to transfer data between the control logic and the bitcells. The control logic provides an address of a target bitcell to the storage. Within a single clock cycle, the storage uses the address to activate the target bitcell, to precharge bitlines coupled to the target bitcell, and to access the target bitcell.

    摘要翻译： 一种包括控制逻辑和耦合到控制逻辑的存储器的计算机系统。 存储器包括用于在控制逻辑和位单元之间传送数据的多个比特单元和位线。 控制逻辑向存储器提供目标位单元的地址。 在单个时钟周期内，存储器使用地址来激活目标比特单元，以预先耦合到目标比特单元的位线，并访问目标比特单元。

    Adaptive voltage control and body bias for performance and energy optimization
    17.
    发明授权
    Adaptive voltage control and body bias for performance and energy optimization 有权
    用于性能和能量优化的自适应电压控制和体偏置

    公开(公告)号：US07307471B2

    公开(公告)日：2007-12-11

    申请号：US11213477

    申请日：2005-08-26

    申请人： Gordon Gammie ,  Alice Wang ,  Uming U. Ko ,  David B. Scott

    发明人： Gordon Gammie ,  Alice Wang ,  Uming U. Ko ,  David B. Scott

    IPC分类号： G05F1/565

    CPC分类号： H03K19/0008 ,  H03K19/00384

    摘要： A device for adaptively controlling a voltage supplied to circuitry in close proximity to the device, comprising a processing module and a first tracking element coupled to the processing module. The first tracking element produces a first value indicative of a first estimated speed associated with the circuitry. The device also comprises a second tracking element coupled to the processing module. The second tracking element produces a second value indicative of a second estimated speed associated with the circuitry. The processing module compares each of the first and second values to respective target values and causes a voltage output to be adjusted based on the comparisons. The first and second tracking elements comprise a plurality of transistors, at least some of the transistors selectively provided with a transistor bias voltage to adjust transistor speed.

    摘要翻译： 一种用于自适应地控制提供给设备附近的电路的电压的装置，包括耦合到处理模块的处理模块和第一跟踪元件。 第一跟踪元件产生指示与电路相关联的第一估计速度的第一值。 该装置还包括耦合到处理模块的第二跟踪元件。 第二跟踪元件产生指示与电路相关联的第二估计速度的第二值。 处理模块将第一和第二值中的每一个与各自的目标值进行比较，并且基于比较使得电压输出被调整。 第一和第二跟踪元件包括多个晶体管，至少一些晶体管选择性地提供晶体管偏置电压以调整晶体管速度。

    Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge (“ESD”) protection
    18.
    发明授权
    Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge (“ESD”) protection 有权
    具有不同电阻的晶体管电路轻掺杂扩散区用于静电放电（“ESD”）保护

    公开(公告)号：US06831337B2

    公开(公告)日：2004-12-14

    申请号：US10622052

    申请日：2003-07-17

    申请人： Zhiqiang Wu ,  David B. Scott

    发明人： Zhiqiang Wu ,  David B. Scott

    IPC分类号： H01L2972

    CPC分类号： H01L29/66659 ,  H01L27/0266 ,  H01L29/0692 ,  H01L29/7835

    摘要： A method of forming a transistor (70) in a semiconductor active area (78). The method forms a gate structure (G2) in a fixed relationship to the semiconductor active area thereby defining a first source/drain region (R1) adjacent a first gate structure sidewall and a second source/drain region (R2) adjacent a second sidewall gate structure. The method also forms a lightly doped diffused region (801) formed in the first source/drain region and extending under the gate structure, wherein the lightly doped diffused region comprises a varying resistance in a direction parallel to the gate structure.

    摘要翻译： 一种在半导体有源区（78）中形成晶体管（70）的方法。 该方法形成与半导体有源区域固定关系的栅极结构（G2），从而限定与第一栅极结构侧壁相邻的第一源极/漏极区域（R1）和邻近第二侧壁栅极的第二源极/漏极区域（R2） 结构体。 该方法还形成在第一源极/漏极区域中形成并在栅极结构下方延伸的轻掺杂扩散区域（801），其中轻掺杂扩散区域包括与栅极结构平行的方向上的变化的电阻。

    Semiconductor device having offset twisted bit lines
    19.
    发明授权
    Semiconductor device having offset twisted bit lines 有权
    具有偏移扭转位线的半导体器件

    公开(公告)号：US06249452B1

    公开(公告)日：2001-06-19

    申请号：US09400694

    申请日：1999-09-22

    申请人： David B. Scott

    发明人： David B. Scott

    IPC分类号： G11C508

    CPC分类号： G11C7/18 ,  G03F7/2022 ,  H01L23/528 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A compact data line arrangement (600) includes “twisted” data line pairs (604a-604c) disposed in a first direction. Each twisted data line pair (604a-604c) includes an upper segment pair (608a-608f) that is connected to a lower segment pair (610a-610f) by a twist structure (612a-612c). The upper and lower segment pairs (608a-608f and 610a-610f) can be formed with a first pitch using phase-shifted lithography. The twist structures (612a-612c) are formed from a second conductive layer, and have a greater pitch than the first pitch. The twist structures (612a-612c) are generally arranged in a second direction that is perpendicular to the first direction. Selected twist structures (612b) are offset in the first direction with respect to adjacent twist structures (612a and 612c). The offset twist structures (612a-612c) allow supplemental conductive lines (618) to be formed from the first conductive layer that extend in the first direction, between adjacent offset twist structures (612a and 612b).

    摘要翻译： 紧凑型数据线装置（600）包括沿第一方向设置的“扭曲”数据线对（604a-604c）。 每个扭绞数据线对（604a-604c）包括通过扭曲结构（612a-612c）连接到下部段对（610a-610f）的上段对（608a-608f）。 上段和下段对（608a-608f和610a-610f）可以使用相移光刻形成具有第一间距。 扭转结构（612a-612c）由第二导电层形成，并且具有比第一间距更大的间距。 扭转结构（612a-612c）通常沿垂直于第一方向的第二方向布置。 选定的扭转结构（612b）相对于相邻的扭转结构（612a和612c）沿第一方向偏移。 偏移扭转结构（612a-612c）允许在相邻的偏移扭曲结构（612a和612b）之间从在第一方向上延伸的第一导电层形成补充导线（618）。

    Semiconductor memory device having Y-select gate voltage that varies according to memory cell access operation
    20.
    发明授权
    Semiconductor memory device having Y-select gate voltage that varies according to memory cell access operation 有权
    具有根据存储单元访问操作而变化的Y选择栅极电压的半导体存储器件

    公开(公告)号：US06178136B1

    公开(公告)日：2001-01-23

    申请号：US09405264

    申请日：1999-09-23

    申请人： Heng-Chih Lin ,  Takumi Nasu ,  David B. Scott

    发明人： Heng-Chih Lin ,  Takumi Nasu ,  David B. Scott

    IPC分类号： G11C700

    CPC分类号： G11C11/4096 ,  G11C7/1048

    摘要： A dynamic random access memory (DRAM) includes a Y-select circuit (218) that connects a pair of bit lines (204a and 204b) to a pair of sense nodes (210a and 210b). The Y-select circuit (218) provides a first impedance in a read operation, and a second impedance that is lower than the first impedance, in a write operation. Changes in Y-select circuit (218) impedance are achieved by driving transistors (N210a and N210b) within the Y-select circuit (218) with a first voltage during a read operation, and a second voltage during a write operation.

    摘要翻译： 动态随机存取存储器（DRAM）包括将一对位线（204a和204b）连接到一对感测节点（210a和210b）的Y选择电路（218）。 在写入操作中，Y选择电路（218）在读取操作中提供第一阻抗，并且提供低于第一阻抗的第二阻抗。 通过在读取操作期间以第一电压驱动Y选择电路（218）内的晶体管（N210a和N210b）以及在写入操作期间的第二电压来实现Y选择电路（218）阻抗的变化。