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公开(公告)号：US20080142820A1
公开(公告)日：2008-06-19
申请号：US11611600
申请日：2006-12-15
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
IPC分类号： H01L33/00 , H01L21/329
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.
摘要翻译： 公开了一种发光二极管，其包括由III族氮化物材料体系形成的发光有源结构，支撑III族氮化物活性结构的接合结构，以及支撑接合结构的安装基板。 安装基板包括反射具有由有源结构发射的频率的至少50％的光的材料。
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公开(公告)号：US5739554A
公开(公告)日：1998-04-14
申请号：US436141
申请日：1995-05-08
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/007
摘要： A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.
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公开(公告)号：US09178121B2
公开(公告)日：2015-11-03
申请号：US11611600
申请日：2006-12-15
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/50 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a light emitting active structure formed from the Group III nitride material system, a bonding structure supporting the Group III nitride active structure, and a mounting substrate supporting the bonding structure. The mounting substrate includes a material that reflects at least fifty percent of light having the frequencies emitted by the active structure.
摘要翻译： 公开了一种发光二极管，其包括由III族氮化物材料体系形成的发光有源结构，支撑III族氮化物活性结构的接合结构，以及支撑接合结构的安装基板。 安装基板包括反射具有由有源结构发射的频率的至少50％的光的材料。
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公开(公告)号：US07482183B2
公开(公告)日：2009-01-27
申请号：US11625377
申请日：2007-01-22
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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公开(公告)号：US20120193651A1
公开(公告)日：2012-08-02
申请号：US13224850
申请日：2011-09-02
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
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16.发明授权Vertical geometry light emitting diode with group III nitride active layer and extended lifetime 失效具有III族氮化物活性层的垂直几何型发光二极管和延长的使用寿命
公开(公告)号：US5523589A
公开(公告)日：1996-06-04
申请号：US309251
申请日：1994-09-20
IPC分类号： H01L33/00 , H01L33/32 , H01L31/0312
CPC分类号： H01L33/32 , H01L33/007
摘要： A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
摘要翻译： 发光二极管发射在可见光谱的蓝色部分，其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底; 与碳化硅衬底的欧姆接触; 选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物的导电缓冲层，其中A和B是III族元素，其中x为零， 或零和1之间的分数，以及碳化硅与这种三元III族氮化物的合金; 以及包括在缓冲层上的p-n结的双异质结构，其中活性和异质结构层选自二元III族氮化物和三元III族氮化物。
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公开(公告)号：US5416342A
公开(公告)日：1995-05-16
申请号：US081668
申请日：1993-06-23
申请人： John A. Edmond , Hua-Shuang Kong
发明人： John A. Edmond , Hua-Shuang Kong
CPC分类号： H01L33/34 , H01L33/02 , H01L33/405
摘要： A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide substrate having a first conductivity type, a first epitaxial layer of silicon carbide on the substrate and having the same conductivity type as the substrate, and a second epitaxial layer of silicon carbide on the first epitaxial layer and having the opposite conductivity type from the first layer. The first and second epitaxial layers forming a p-n junction, and the diode includes ohmic contacts for applying a potential difference across the p-n junction. The second epitaxial layer has side walls and a top surface that forms the top surface of the diode, and the second epitaxial layer has a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from the side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.
摘要翻译： 公开了一种以高外部量子效率在可见光谱的蓝色部分中发光的发光二极管。 二极管包括具有第一导电类型的单晶碳化硅衬底，在衬底上的碳化硅的第一外延层并且具有与衬底相同的导电类型，以及在第一外延层上的第二碳化硅外延层，并且具有 与第一层相反的导电类型。 形成p-n结的第一外延层和第二外延层，二极管包括用于在p-n结上施加电位差的欧姆接触。 第二外延层具有形成二极管的顶表面的侧壁和顶表面，并且第二外延层具有足以增加由该结点发射的光将从侧壁向外辐射的立体角的厚度，但是 小于所述第二层中的内部吸收将大大减少从所述二极管的所述顶表面发射的光的厚度。
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公开(公告)号：US4946547A
公开(公告)日：1990-08-07
申请号：US421375
申请日：1989-10-13
申请人： John W. Palmour , Hua-Shuang Kong , John A. Edmond
发明人： John W. Palmour , Hua-Shuang Kong , John A. Edmond
IPC分类号： H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/36 , H01L21/465
CPC分类号： H01L21/02529 , H01L21/02378 , H01L21/02433 , H01L21/02609 , H01L21/02631 , H01L21/02658 , H01L21/465
摘要： The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.
摘要翻译： 本发明是通过将基本上平坦的表面暴露于蚀刻等离子体，直到基本上除去由表面的任何机械制备引起的任何表面或地下损伤为止，在单晶碳化硅晶体上形成基本平坦的表面的方法。 然而，蚀刻被限制到比等离子体蚀刻将在表面上产生新缺陷或加剧现有蚀刻的时间段，并且在使用本身不加重或引起实质缺陷的等离子体气体和电极系统的时候 表面。
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公开(公告)号：US07531840B2
公开(公告)日：2009-05-12
申请号：US11627399
申请日：2007-01-26
IPC分类号： H01L31/0312
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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公开(公告)号：US20080197378A1
公开(公告)日：2008-08-21
申请号：US11676715
申请日：2007-02-20
申请人： Hua-Shuang Kong , John A. Edmond
发明人： Hua-Shuang Kong , John A. Edmond
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014
摘要： A light emitting diode is disclosed that includes a layer of p-type Group III nitride and a layer of n-type Group III nitride on a transparent carrier substrate that has an index of refraction lower then the layer of Group III nitride adjacent the carrier substrate. A layer of transparent adhesive joins the transparent substrate to the Group III nitride layers, and the transparent adhesive has an index of refraction lower than the layer of Group III nitride. The diode includes respective ohmic contacts to the p-type Group III nitride layer and to the n-type Group III nitride layer.
摘要翻译： 公开了一种发光二极管，其包括在透明载体衬底上的p型III族氮化物层和n型III族氮化物层，其折射率低于邻近载体衬底的III族氮化物层 。 透明粘合剂层将透明基材连接到III族氮化物层，并且透明粘合剂的折射率低于III族氮化物层。 二极管包括对p型III族氮化物层和n型III族氮化物层的相应欧姆接触。
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