公开(公告)号：US09219173B2

公开(公告)日：2015-12-22

申请号：US14706773

申请日：2015-05-07

申请人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US08586403B2

公开(公告)日：2013-11-19

申请号：US13028059

申请日：2011-02-15

申请人： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

发明人： Gabriel Harley ,  David D. Smith ,  Tim Dennis ,  Ann Waldhauer ,  Taeseok Kim ,  Peter John Cousins

IPC分类号： H01L21/00

CPC分类号： H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

摘要翻译： 通过激光烧蚀形成太阳能电池的接触孔，以适应各种太阳能电池设计。 通过用具有基本上均匀的厚度的膜代替在扩散区上形成的膜来促进使用激光来形成接触孔。 接触孔可以形成到深扩散区域，以增加激光烧蚀过程边缘。 可以调整激光器配置以通过不同厚度的介电膜形成接触孔。

公开(公告)号：US20170288074A1

公开(公告)日：2017-10-05

申请号：US15334706

申请日：2016-10-26

申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

公开(公告)号：US20170222068A1

公开(公告)日：2017-08-03

申请号：US15485840

申请日：2017-04-12

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/0475 ,  H01L31/028 ,  H01L31/05

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20160284923A1

公开(公告)日：2016-09-29

申请号：US14866239

申请日：2015-09-25

申请人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

发明人： Michael C. Johnson ,  Taiqing Qiu ,  David D. Smith ,  Peter John Cousins ,  Staffan Westerberg

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

摘要翻译： 本文描述了制造太阳能电池的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的方法包括通过基底表面的自由基氧化或等离子体氧化在基板的表面上形成薄的电介质层。 该方法还涉及在薄介电层上形成硅层。 该方法还涉及从硅层形成多个发射极区域。

公开(公告)号：US20160133767A1

公开(公告)日：2016-05-12

申请号：US15000492

申请日：2016-01-19

申请人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

发明人： David D. Smith ,  Timothy Weidman ,  Staffan Westerberg

IPC分类号： H01L31/0368 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0288

CPC分类号： H01L31/03685 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0288 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type. First and second conductive contact structures are electrically connected to the first and second polycrystalline silicon emitter regions, respectively.

公开(公告)号：US09337369B2

公开(公告)日：2016-05-10

申请号：US14229769

申请日：2014-03-28

申请人： David D. Smith

发明人： David D. Smith

IPC分类号： H01L21/00 ,  H01L31/00 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/02167 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  Y02E10/50 ,  Y02E10/547

摘要： A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

摘要翻译： 太阳能电池可以具有在硅衬底的第一掺杂区域上形成的第一电介质。 太阳能电池可以具有在硅衬底的第二掺杂区域上形成的第二电介质，其中第一电介质是与第二电介质不同类型的电介质。 可以在第一和第二电介质上形成掺杂半导体。 可以在掺杂半导体上形成正型金属和负型金属。

公开(公告)号：US20160071999A1

公开(公告)日：2016-03-10

申请号：US14945047

申请日：2015-11-18

申请人： Paul Loscutoff ,  David D. Smith ,  Michael Morse ,  Ann Waldhauer ,  Taeseok Kim ,  Steven Edward Molesa

发明人： Paul Loscutoff ,  David D. Smith ,  Michael Morse ,  Ann Waldhauer ,  Taeseok Kim ,  Steven Edward Molesa

IPC分类号： H01L31/18 ,  H01L31/0384 ,  H01L31/0352

CPC分类号： H01L31/182 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/03845 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/939 ,  Y10S977/948

摘要： Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer.

摘要翻译： 描述了使用硅纳米颗粒制造太阳能电池发射极区域的方法和所得到的太阳能电池。 在一个示例中，制造太阳能电池的发射极区域的方法包括在设置在太阳能电池的基板的表面上方的电介质层的上方形成掺杂的硅纳米颗粒的区域。 在掺杂的硅纳米颗粒的区域上形成一层硅。 硅层的至少一部分与掺杂的硅纳米颗粒的区域的至少一部分混合以形成设置在电介质层上的掺杂多晶硅层。

公开(公告)号：US09263601B2

公开(公告)日：2016-02-16

申请号：US13723901

申请日：2012-12-21

申请人： Junbo Wu ,  Michael C. Johnson ,  Michael Cudzinovic ,  Joseph Behnke ,  Xi Zhu ,  David D. Smith ,  Richard Sewell Hamilton ,  Xiuwen Tu ,  Seung Bum Rim

发明人： Junbo Wu ,  Michael C. Johnson ,  Michael Cudzinovic ,  Joseph Behnke ,  Xi Zhu ,  David D. Smith ,  Richard Sewell Hamilton ,  Xiuwen Tu ,  Seung Bum Rim

IPC分类号： H01L31/042 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/022425 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/547

摘要： Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

摘要翻译： 描述了用于太阳能电池导电触点的种子层的增强的附着和形成太阳能电池导电触点的方法。 例如，制造太阳能电池的方法包括在基板的发射极区域的上方形成粘附层。 在粘合层上形成金属种子糊层。 将金属种子糊层和粘附层退火以形成与衬底的发射极区域接触的导电层。 用于太阳能电池的导电接触由导电层形成。

公开(公告)号：US20160043267A1

公开(公告)日：2016-02-11

申请号：US14919049

申请日：2015-10-21

申请人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

发明人： Seung Bum Rim ,  David D. Smith ,  Taiqing Qiu ,  Staffan Westerberg ,  Kieran Mark Tracy ,  Venkatasubramani Balu

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/068

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.