公开(公告)号：US06982185B2

公开(公告)日：2006-01-03

申请号：US10358471

申请日：2003-02-04

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H01L21/00

CPC分类号： H01H1/0036 ,  G01P15/0802 ,  G01P15/0894 ,  H01H59/0009

摘要： A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on an etch stop layer on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer and the etch stop layer are removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

公开(公告)号：US08782876B1

公开(公告)日：2014-07-22

申请号：US13163357

申请日：2011-06-17

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H04R17/10 ,  H04R31/00

CPC分类号： H03H9/542 ,  H03H9/0542

摘要： A process for fabricating an integrated Micro-Electro-Mechanical Systems (MEMS) filter includes bonding an insulating substrate having a first end and a second end to a base substrate, the second end of the insulating substrate cantilevered over and separated from the base substrate by a gap, forming a resonator element on the second end of the insulating substrate, forming an inductive element comprising a coil, wherein the coil is formed on the insulating substrate, and forming a capacitive element on the first side of the insulating substrate, the capacitive element comprised of two conductive plates, wherein one of the two conductive plates is formed on the insulating substrate.

摘要翻译： 一种用于制造集成的微电子机械系统（MEMS）滤波器的方法，包括将具有第一端和第二端的绝缘基板接合到基底基板，绝缘基板的第二端通过 间隙，在所述绝缘基板的第二端上形成谐振器元件，形成包括线圈的电感元件，其中所述线圈形成在所述绝缘基板上，并且在所述绝缘基板的第一侧上形成电容元件，所述电容 由两个导电板组成的元件，其中两个导电板中的一个形成在绝缘基板上。

公开(公告)号：US08138016B2

公开(公告)日：2012-03-20

申请号：US12399680

申请日：2009-03-06

申请人： David T. Chang ,  Randall L. Kubena

发明人： David T. Chang ,  Randall L. Kubena

IPC分类号： H01L21/44 ,  H01L23/34

CPC分类号： H04R17/00 ,  H01L2924/0002 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/53178 ,  H01L2924/00

摘要： Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer bonding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

摘要翻译： 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片结合将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题，并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。

公开(公告)号：US07830074B2

公开(公告)日：2010-11-09

申请号：US11881461

申请日：2007-07-27

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H01L41/09

CPC分类号： H04R17/10 ,  B81B2201/0271 ,  B81B2207/012 ,  B81C1/00253 ,  H04R31/00 ,  Y10T29/42

摘要： An oscillator having a quartz resonator, and a base wafer containing active electronics, wherein the quartz resonator is bonded directly to the base wafer and subsequently hermetically capped.

摘要翻译： 具有石英谐振器的振荡器和包含有源电子器件的基底晶片，其中所述石英谐振器直接接合到所述基底晶片并随后密封。

公开(公告)号：US07555824B2

公开(公告)日：2009-07-07

申请号：US11502336

申请日：2006-08-09

申请人： David T. Chang ,  Randall L. Kubena

发明人： David T. Chang ,  Randall L. Kubena

IPC分类号： H04R31/00

CPC分类号： H04R17/00 ,  H01L2924/0002 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/53178 ,  H01L2924/00

摘要： Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer boding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.

摘要翻译： 描述了通过直接拾取和倒装芯片接合或使用处理晶片的晶片到晶片的布局将石英基谐振器与大面积晶片上的电子器件集成的方法。 所得到的石英基谐振器和大面积电子晶片的组合解决了石英电子衬底直径不匹配的问题，并且能够将具有不同频率的石英器件的阵列与相同的电子器件集成。

公开(公告)号：US06951768B2

公开(公告)日：2005-10-04

申请号：US10370124

申请日：2003-02-18

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： G01P9/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  G01C19/56 ,  G01P9/04 ,  H01H1/00 ,  H01H59/00 ,  H01L21/00

CPC分类号： H01H1/0036 ,  H01H59/0009

摘要： A method of making a micro electromechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer.

摘要翻译： 制造微机电开关或隧道传感器的方法。 在第一基板或晶片上限定悬臂梁结构和配合结构; 并且在第二衬底或晶片上限定至少一个接触结构和配合结构，所述第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 配合结构中的至少一个包括从至少一个所述基底的主表面延伸的突起。 在至少一个配合结构上提供粘合层，优选共晶粘合层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，以便在接合或共晶层处在两个配合结构之间发生结合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。

公开(公告)号：US06674141B1

公开(公告)日：2004-01-06

申请号：US09629683

申请日：2000-08-01

申请人： Randall L. Kubena ,  David T. Chang

发明人： Randall L. Kubena ,  David T. Chang

IPC分类号： H01L2982

CPC分类号： B81C3/002 ,  B81B2201/0242 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/058 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842 ,  H01H1/0036 ,  H01H59/0009

摘要： A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.

摘要翻译： 三轴MEM隧道/电容传感器及其制造方法。 至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被限定在第一衬底或晶片上，所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 还限定了至少第三传感器的谐振器结构，第三传感器在正交于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的灵敏度。 至少两个正交布置的传感器的接触结构与第二衬底或晶片上的配合结构一起形成，第二衬底或晶片上的配合结构与第一衬底或晶片上的配合结构互补形状。 第一衬底的配合结构以与第二衬底或晶片的配合结构相对的关系设置。 与一个配对结构相关联的共晶粘合层便于各个配合结构之间的结合。 去除第一衬底或晶片的至少一部分以释放悬臂梁结构和谐振器结构。

公开(公告)号：US08778800B1

公开(公告)日：2014-07-15

申请号：US13887370

申请日：2013-05-06

申请人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

发明人： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

IPC分类号： H01L21/44

CPC分类号： H01G11/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01G11/28 ,  H01G11/36 ,  H01G11/46 ,  H01G11/82 ,  H01L28/91 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  Y02E60/13

摘要： This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.

摘要翻译： 本发明提供了具有高能量密度和高功率密度的微型超级电容器。 在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。 使用接合工艺将盖结合到腔体以形成气密密封。 根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。 示例性的微超级电容器是长度为约50-100μm的立方体。 没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。 在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

公开(公告)号：US08558281B1

公开(公告)日：2013-10-15

申请号：US13310473

申请日：2011-12-02

申请人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

发明人： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

IPC分类号： H01L29/205

CPC分类号： H01L29/42316 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

摘要： A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate including silicon, forming first sidewalls of a first material on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a material layer over the mesa, planarizing the material layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the material layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

摘要翻译： 一种制造用于场效应晶体管的栅极结构的方法，该场效应晶体管在衬底上具有缓冲层，沟道层上的沟道层和势垒层包括形成包含硅的栅极，在任一侧和相邻的第一侧上形成第一材料的第一侧壁 到栅极，选择性地蚀刻到缓冲层中以形成用于场效应晶体管的台面，在所述台面上沉积材料层，在所述台面上平坦化所述材料层以形成平坦化表面，使得所述栅极的顶部， 第一侧壁和台面上的材料层的顶部在相同的平坦化表面上，在平面化表面上沉积金属，退火以将栅极形成金属硅化栅极，并蚀刻以除去多余的非硅化金属。

公开(公告)号：US08246846B1

公开(公告)日：2012-08-21

申请号：US12889687

申请日：2010-09-24

申请人： David T. Chang ,  Tsung-Yuan Hsu

发明人： David T. Chang ,  Tsung-Yuan Hsu

IPC分类号： C23F3/00

CPC分类号： H03H9/462 ,  H01H59/0009 ,  H03H9/465 ,  H03H2009/241

摘要： A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

摘要翻译： 一种用于制造集成的MEMS开关和滤波器的方法包括在硅衬底中形成空腔，将石英衬底上的第一图案金属化以形成第一开关和滤波器元件，将石英衬底接合到硅衬底，使得第一开关和滤波器元件 位于一个空腔内，使石英衬底变薄，在石英衬底中形成导电通孔，在石英衬底的第二表面上金属化第二图案以形成第二开关和滤光元件，蚀刻石英衬底以将MEMS开关与过滤器分离 在主机基板上形成突起，在主机基板上形成金属化第三金属图案以形成金属锚和第三开关元件，将主机基板上的金属锚固件压接到第二开关和滤波元件，形成信号线以集成MEMS开关 并过滤并去除硅衬底。