Method for fabricating a storage capacitor
    11.
    发明申请
    Method for fabricating a storage capacitor 审中-公开
    存储电容器的制造方法

    公开(公告)号:US20060073659A1

    公开(公告)日:2006-04-06

    申请号:US11285639

    申请日:2005-11-22

    Abstract: The present invention relates to a novel method for fabricating a storage capacitor designed as a trench or a stacked capacitor and is used in particular in a DRAM memory cell. The method includes steps of forming a lower, metallic capacitor electrode, a storage dielectric and an upper capacitor electrode. The lower, metallic capacitor electrode is formed in a self-aligned manner on a silicon base material in such a way that uncovered silicon regions are first produced at locations at which the lower capacitor electrode will be formed, and then metal silicide is selectively formed on the uncovered silicon regions.

    Abstract translation: 本发明涉及一种用于制造设计为沟槽或层叠电容器的存储电容器的新颖方法,特别用于DRAM存储单元。 该方法包括形成下部金属电容器电极,存储电介质和上部电容器电极的步骤。 下部金属电容器电极以自对准的方式形成在硅基材上,使得首先在将形成下电容器电极的位置处产生未覆盖的硅区域,然后选择性地形成金属硅化物 未覆盖的硅区域。

    Apparatus for setting the spacing of a free standing range from a floor
    13.
    发明授权
    Apparatus for setting the spacing of a free standing range from a floor 有权
    用于从地板设定自由站立距离的间隔的装置

    公开(公告)号:US08079555B2

    公开(公告)日:2011-12-20

    申请号:US12895994

    申请日:2010-10-01

    CPC classification number: A47L15/4253 D06F39/125 F16M7/00

    Abstract: An apparatus for setting the spacing of a free standing range relative to a floor includes a base component for contacting the floor, a threaded element, and a winding follower. The winding follower extends into the helical recess of the threaded element such that the winding follower travels progressively further along the helical recess of the threaded element. A blocking member engages the winding follower during travel of the winding follower along the helical recess of the threaded element to resist a disengagement movement.

    Abstract translation: 用于设定相对于地板的自由站立范围的间隔的装置包括用于接触地板的基座部件,螺纹元件和绕组从动件。 绕组从动件延伸到螺纹元件的螺旋凹槽中,使得绕组从动件沿螺纹元件的螺旋凹槽进一步进一步移动。 在绕线从动件沿着螺纹元件的螺旋凹槽行进期间,阻挡构件接合绕组从动件以抵抗分离运动。

    Method for obtaining polyhydroxyalkanoates (PHA) and the copolymers thereof
    14.
    发明授权
    Method for obtaining polyhydroxyalkanoates (PHA) and the copolymers thereof 失效
    获得聚羟基链烷酸酯(PHA)的方法及其共聚物

    公开(公告)号:US07070966B2

    公开(公告)日:2006-07-04

    申请号:US10221525

    申请日:2001-03-13

    CPC classification number: C12P7/625

    Abstract: The invention relates to an enzymatic-chemical method for obtaining polyhydroxyalkanoates (PHA), especially polyhydroxybutyrate (PHB), or the copolymers thereof, from biomass. The inventive method comprises chemically treating the biomass with a reducing agent that reduces the non-PHA cell components of the biomass. The chemical treatment is carried out before and/or after enzymatic cell disruption. The inventive method allows, unlike other cell disruption techniques, for obtaining polyhydroxyalkanoates from biomass with a relatively low PHA content (for example

    Abstract translation: 本发明涉及从生物质获得聚羟基链烷酸酯(PHA),特别是聚羟基丁酸酯(PHB)或其共聚物的酶学方法。 本发明的方法包括用减少生物质的非PHA细胞成分的还原剂化学处理生物质。 在酶细胞破裂之前和/或之后进行化学处理。 与其他细胞破碎技术不同,本发明的方法允许从具有相对低的PHA含量(例如<60%)的生物质获得聚羟基链烷酸酯,而不会显着改变或劣化聚合物性质或聚合物纯度。

    Memory cell arrangement
    16.
    发明授权
    Memory cell arrangement 失效
    存储单元布置

    公开(公告)号:US06627940B1

    公开(公告)日:2003-09-30

    申请号:US09937838

    申请日:2002-02-05

    CPC classification number: H01L27/10876 H01L27/10808 H01L27/10823

    Abstract: A memory-cell array includes a substrate forming parallel first and second trenches. A transistor's upper source/drain region adjoins two of the first and two of the second trenches, and lies above its lower source/drain region. A conductive structure in a first trench associated with the transistor adjoins the upper source/drain region at its first edge. An insulating structure in the associated first trench insulates the conductive structure from a second edge and from a bottom of the associated first trench. A word line, on which is a further insulating layer, is over the upper/source drain region and parallel to the associated first trench bulges into the second trenches. Insulating spaces adjoin the word line laterally. A contact on the conductive structure and in electrical communication with the upper source/drain region connects with a capacitor.

    Abstract translation: 存储单元阵列包括形成平行的第一和第二沟槽的衬底。 晶体管的上部源极/漏极区域邻接第一和第二个第二沟槽中的两个,并且位于其下部源极/漏极区域的上方。 与晶体管相关联的第一沟槽中的导电结构在其第一边缘邻接上部源极/漏极区。 相关联的第一沟槽中的绝缘结构将导电结构与相关联的第一沟槽的第二边缘和底部绝缘。 在其上是另一个绝缘层的字线在上部/源极漏极区域上方并且平行于相关联的第一沟槽凸起进入第二沟槽。 绝缘空间横向与字线连接。 导电结构上的与上部源极/漏极区域电连通的触点与电容器连接。

    Integrated circuit configuration with at least one capacitor and method for producing the same
    18.
    发明授权
    Integrated circuit configuration with at least one capacitor and method for producing the same 有权
    具有至少一个电容器的集成电路配置及其制造方法

    公开(公告)号:US06525363B1

    公开(公告)日:2003-02-25

    申请号:US09677433

    申请日:2000-10-02

    Abstract: A first capacitor electrode of the capacitor, which is arranged on a surface of a substrate (1), has a lower part (T) and a lateral part (S) arranged thereon. At least a first lateral area of the lateral part (S) is undulatory in such a way that it has bulges and indentations alternately which are formed along lines each running in a plane parallel to the surface of the substrate (1). The lateral part (T) can be produced by depositing conductive material in a depression (V) which is produced in a layer sequence whose layers are composed alternately of a first material and a second material and in which the first material is subjected to wet etching selectively with respect to the second material down to a first depth. The first capacitor electrode is provided with a capacitor dielectric (KD). A second capacitor electrode (P) adjoins the capacitor dielectric (KD).

    Abstract translation: 设置在基板(1)的表面上的电容器的第一电容电极具有布置在其上的下部(T)和侧部(S)。 横向部分(S)的至少第一横向区域以这样的方式波动,使得其具有沿着平行于基底(1)的表面的平面中的每条线条沿着线形成的凸起和凹陷。 横向部分(T)可以通过将导电材料沉积在层中产生的凹陷(V)中来制造,层的顺序是层,其层由第一材料和第二材料交替组成,并且其中第一材料经受湿蚀刻 相对于第二材料选择性地到达第一深度。 第一电容器电极设置有电容器电介质(KD)。 第二电容器电极(P)与电容器电介质(KD)相邻。

    PREPARATION FOR EXTERNAL APPLICATION
    19.
    发明申请
    PREPARATION FOR EXTERNAL APPLICATION 审中-公开
    外部应用准备

    公开(公告)号:US20120064011A1

    公开(公告)日:2012-03-15

    申请号:US13257100

    申请日:2010-03-19

    Applicant: Dirk Schumann

    Inventor: Dirk Schumann

    CPC classification number: A61K9/1075 A61K9/0014 A61K47/08 A61K47/10

    Abstract: Preparations for external application to human and animal skin, comprising: a) a composition in the form of a fluid nanophase system, comprising the components of a1) at least one water-insoluble substance with a water solubility of less than 4 gram per liter, a2) at least one amphiphilic substance (NP-MCA), which has no surfactant structure, does not build structures alone, the solubility of which is between 4 g and 1000 g per liter in water or oil and which does not enrich preferably at the oil-water interface, a3) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, a4) at least one polar protic solvent, in particular having hydroxy functionality, a5) if necessary one or more adjuvants, wherein the percentage relate to the total weight of the composition each; and b) a therapeutic, cosmetic or diagnostically effective agent in a therapeutic, cosmetic or diagnostically effective amount.

    Abstract translation: 外用于人和动物皮肤的制剂,包括:a)流体纳米相系统形式的组合物,其包含a1)至少一种水溶解度小于4克/升的水不溶性物质的组分, a2)不具有表面活性剂结构的至少一种两亲物质(NP-MCA)不单独构成结构,其溶解度在水或油中为4g至1000g / l,优选不在 油 - 水界面,a3)至少一种阴离子,阳离子,两性和/或非离子表面活性剂,a4)至少一种极性质子溶剂,特别是具有羟基官能团,a5)如果需要,一种或多种助剂,其中百分比 涉及组合物的总重量; 和b)治疗,美容或诊断有效的治疗,美容或诊断有效量的药剂。

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