公开(公告)号：US20120009792A1

公开(公告)日：2012-01-12

申请号：US13240059

申请日：2011-09-22

申请人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

发明人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

IPC分类号： H01L21/308 ,  H01L21/306

CPC分类号： H01L21/02087 ,  C09K13/08 ,  H01L21/0209 ,  H01L21/31111 ,  H01L21/32134

摘要： A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

摘要翻译： 半导体湿蚀刻剂包括去离子水，氟基化合物，氧化剂和无机盐。 基于蚀刻剂的总重量，氟系化合物的浓度为0.25〜10.0重量％，氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量％，无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量％。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。

公开(公告)号：US08043974B2

公开(公告)日：2011-10-25

申请号：US12168952

申请日：2008-07-08

申请人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

发明人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/02087 ,  C09K13/08 ,  H01L21/0209 ,  H01L21/31111 ,  H01L21/32134

摘要： A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

摘要翻译： 半导体湿蚀刻剂包括去离子水，氟基化合物，氧化剂和无机盐。 基于蚀刻剂的总重量，氟系化合物的浓度为0.25〜10.0重量％，氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量％，无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量％。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。

公开(公告)号：US07943562B2

公开(公告)日：2011-05-17

申请号：US12332568

申请日：2008-12-11

申请人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

发明人： Da-Hee Lee ,  Jung-Dae Park ,  Hun-Jung Yi ,  Tae-Hyo Choi

IPC分类号： C11D7/32

CPC分类号： C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02071

摘要： In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

摘要翻译： 在清洁组合物中，清洁半导体衬底的方法和制造半导体器件的方法，所述清洁组合物包括约0.5至约5重量％的有机氢氧化铵化合物，约0.1至约3重量％的 氟化物化合物，约0.1至约3重量％的缓冲剂，约0.5至约5重量％的蚀刻促进剂，剩余的水。

公开(公告)号：US20110123400A1

公开(公告)日：2011-05-26

申请号：US13017440

申请日：2011-01-31

申请人： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

发明人： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

IPC分类号： G01N33/20

CPC分类号： G01N21/77 ,  G01N31/22

摘要： The present invention provides an apparatus for detecting metal concentration from an area including compounding a solution that includes a metal dissolved by a solvent, and a reagent combined with metal ions dissolved in the solution and referring a difference of absorption rates between a compound of the solvent and reagent and a compound of the solution and reagent.

摘要翻译： 本发明提供一种用于从包括由溶剂溶解的金属的溶液混合的区域和与溶解在溶液中的金属离子组合的试剂的区域中检测金属浓度的装置，并且提及溶剂化合物之间的吸收速率差 试剂和溶液和试剂的化合物。

公开(公告)号：US20090017626A1

公开(公告)日：2009-01-15

申请号：US12168952

申请日：2008-07-08

申请人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

发明人： Jung-Dae Park ,  Young You ,  Tae-Hyo Choi ,  Hun-Jung Yi ,  Kun-Hyung Lee

IPC分类号： H01L21/311 ,  C09K13/08

CPC分类号： H01L21/02087 ,  C09K13/08 ,  H01L21/0209 ,  H01L21/31111 ,  H01L21/32134

摘要： A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

摘要翻译： 半导体湿蚀刻剂包括去离子水，氟基化合物，氧化剂和无机盐。 基于蚀刻剂的总重量，氟系化合物的浓度为0.25〜10.0重量％，氧化剂的浓度相对于蚀刻剂的总重量为0.45〜3.6重量％，无机盐的浓度 相对于蚀刻剂的总重量为1.0〜5.0重量％。 无机盐包括铵离子（NH 4 +）和氯离子（Cl - ）中的至少一种。

公开(公告)号：US20080194037A1

公开(公告)日：2008-08-14

申请号：US12029612

申请日：2008-02-12

申请人： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

发明人： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

IPC分类号： G01N33/20 ,  G01N30/96

CPC分类号： G01N21/77 ,  G01N31/22

摘要： The present invention provides methods for detecting metal concentration from an area including compounding a solution that includes a metal dissolved by a solvent, and a reagent combined with metal ions dissolved in the solution and referring a difference of absorption rates between a compound of the solvent and reagent and a compound of the solution and reagent. An apparatus for carrying out the processes described herein are also provided.

摘要翻译： 本发明提供了从包括将溶剂溶解的金属溶液混合的区域和与溶解在溶液中的金属离子组合的试剂的区域检测金属浓度的方法，并且提及溶剂的化合物和 试剂和溶液和试剂的化合物。 还提供了用于执行本文所述的处理的装置。

公开(公告)号：US07678751B2

公开(公告)日：2010-03-16

申请号：US11296000

申请日：2005-12-06

申请人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

发明人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

IPC分类号： C11D7/50

CPC分类号： C11D7/264 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047

摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

摘要翻译： 公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。 组合物可以包括酮化合物和第一极性非质子溶剂。 组合物还可以包括酮化合物和第二极性非质子溶剂。 此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。 第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

公开(公告)号：US20060122084A1

公开(公告)日：2006-06-08

申请号：US11296000

申请日：2005-12-06

申请人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

发明人： Jung-Dae Park ,  Sang-Eon Lee ,  Sang-Mun Chon ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun

IPC分类号： C11D7/32

CPC分类号： C11D7/264 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047

摘要： Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

摘要翻译： 公开了除去光致抗蚀剂的组合物，去除光刻胶的方法以及使用组合物制造半导体器件的方法。 组合物可以包括酮化合物和第一极性非质子溶剂。 组合物还可以包括酮化合物和第二极性非质子溶剂。 此外，组合物可以包括第一极性非质子溶剂和具有或不具有酮化合物的第二极性非质子溶剂。 第一极性非质子溶剂具有醚化合物和酯化合物中的至少一种，第二极性非质子溶剂具有含硫化合物和含氮化合物中的至少一种。

公开(公告)号：US20120183696A1

公开(公告)日：2012-07-19

申请号：US13279785

申请日：2011-10-24

申请人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

发明人： Jung-Dae Park ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sung-Hoon Bae ,  Yoon-Mi Lee ,  Da-Hee Lee ,  Min-Jung Kim

IPC分类号： B05D1/18 ,  B05D3/02 ,  C25D21/14

CPC分类号： C25D21/12

摘要： A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.

摘要翻译： 电镀方法包括将电镀溶液供应到电镀槽中，将具有下金属互连和光致抗蚀剂图案的第一衬底浸入电镀液中，在第一衬底上进行第一电镀工艺和形成第一电镀图案， 收集电镀溶液样品，分析样品中包含的光致抗蚀剂残渣，将第二衬底浸入电镀溶液中，并在第二衬底上进行第二电镀工艺和形成第二电镀图案。

公开(公告)号：US07985297B2

公开(公告)日：2011-07-26

申请号：US12500141

申请日：2009-07-09

申请人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

发明人： Jung-Dae Park ,  Pil-Kwon Jun ,  Bo-Yong Lee ,  Tae-Hyo Choi ,  Da-Hee Lee ,  Seung-Ki Chae

IPC分类号： H01L21/02

CPC分类号： C11D11/0052 ,  C11D7/08 ,  C11D7/28 ,  C11D7/3209

摘要： A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

摘要翻译： 提供了石英部件的清洗液和清洗石英部件的方法。 清洗溶液包含约5至约35重量％的铵化合物，约7至约55重量％的酸性氧化剂，约5至约30重量％的氟化合物和剩余量的水。 可以除去石英部件表面上的残余薄膜和杂质，同时减少对石英部件的损伤。