公开(公告)号：US20130051164A1

公开(公告)日：2013-02-28

申请号：US13523429

申请日：2012-06-14

Applicant: Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

Inventor： Man Chang ,  Young-bae Kim ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Kyung-min Kim

IPC: G11C7/06 ,  G11C7/00

CPC classification number: G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069

Abstract: A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

Abstract translation: 一种驱动非易失性存储器件的方法，包括：将复位电压施加到单元存储单元，读取单元存储单元的复位电流，确认复位电流是否在第一电流范围内，如果复位电流不在第一电流范围内 电流范围，如果复位电流在第一电流范围内，则改变复位电压并施加改变的复位电压或再次将施加设定电压的复位电压施加到单元存储单元， 在当前复位电流和紧接在前的设定电流之间的电流在第二电流范围内，并且如果该差值不在第二电流范围内，则在应用组合之后施加复位电压或再次施加复位电压到单元存储单元 电压到单元存储单元。

公开(公告)号：US08223773B2

公开(公告)日：2012-07-17

申请号：US12606078

申请日：2009-10-26

Applicant: Kyeong-hwan Doo ,  Bin-yeong Yoon ,  Dong-soo Lee

Inventor： Kyeong-hwan Doo ,  Bin-yeong Yoon ,  Dong-soo Lee

IPC: H04L12/28

CPC classification number: H04Q11/0067 ,  H04J3/1694 ,  H04J14/0282 ,  H04J2203/0058 ,  H04Q11/0071 ,  H04Q2011/0073

Abstract: Disclosed are an optical line terminal in a gigabit passive optical network and a method for transmitting a broadcast frame using the same. The optical line terminal allocates second port identifiers to optical network units such that a broadcast frame is prevented from being retransmitted to an optical network unit which has transmitted the broadcast frame to the optical line terminal.

Abstract translation: 公开了一种千兆无源光网络中的光线路终端以及使用其的广播帧的发送方法。 光线路终端将第二端口标识符分配给光网络单元，使得广播帧被阻止被重发到已经向广播帧发送到光线路终端的光网络单元。

公开(公告)号：US20110079361A1

公开(公告)日：2011-04-07

申请号：US12850027

申请日：2010-08-04

Applicant: Byeong-kuk Park ,  Seok Goh ,  Kyoung-bok Cho ,  Dong-soo Lee ,  Jung-hwan Woo

Inventor： Byeong-kuk Park ,  Seok Goh ,  Kyoung-bok Cho ,  Dong-soo Lee ,  Jung-hwan Woo

IPC: B32B37/02

CPC classification number: H01L24/83 ,  H01L24/75 ,  H01L2224/83 ,  H01L2224/838 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  Y10T156/1707 ,  Y10T156/1744

Abstract: An apparatus for semiconductor die bonding includes a first bonding head and a second bonding head configured to respectively pickup a first semiconductor chip and a second semiconductor chip located at a pickup point. The apparatus for semiconductor die bonding may also include a first transfer device configured to transfer the first bonding head from the pickup point to a bonding point located on a substrate along a transfer path. The first transfer device may further be configured to return to the pickup point along a first return path after the first semiconductor chip is bonded to the substrate. Also, the apparatus for semiconductor die bonding may include a second transfer device configured to transfer the second bonding head from the pickup point to the bonding point located on the substrate along the transfer path. The second transfer device may further be configured to return to the pickup point along a second return path after the second semiconductor chip is bonded to the substrate. Additionally, the apparatus for semiconductor die bonding may include a controller configured to alternately apply a transfer signal and a return signal to the first transfer device and the second transfer device so the first bonding head and the second bonding head do not collide with each other.

Abstract translation: 一种用于半导体管芯接合的设备包括：第一接合头和第二接合头，其被配置为分别拾取位于拾取点处的第一半导体芯片和第二半导体芯片。 用于半导体管芯接合的设备还可以包括第一传送设备，其被配置为沿着传送路径将第一接合头从拾取点传送到位于衬底上的接合点。 第一传送装置还可以被配置为在第一半导体芯片被接合到基板之后沿着第一返回路径返回到拾取点。 此外，用于半导体管芯接合的装置可以包括第二传送装置，其被配置为沿着传送路径将第二接合头从拾取点传送到位于衬底上的接合点。 第二传送装置还可以被配置为在第二半导体芯片被接合到基板之后沿着第二返回路径返回到拾取点。 另外，用于半导体管芯接合的装置可以包括控制器，其被配置为交替地将传递信号和返回信号施加到第一传送装置和第二传送装置，使得第一接合头和第二接合头不会彼此碰撞。

公开(公告)号：US20100221006A1

公开(公告)日：2010-09-02

申请号：US12597850

申请日：2008-08-19

Applicant: Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

Inventor： Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

IPC: H04J14/08

CPC classification number: H04J3/1694 ,  H04J2203/0067 ,  H04Q11/0067 ,  H04Q2011/0064

Abstract: Provided are an apparatus and method for efficiently and dynamically allocating a bandwidth on a Time Division Multiple Access-based Passive Optical Network (TDMA PON). The dynamic bandwidth allocation apparatus for uplink data transmission of a plurality of Optical Network Units (ONUs) including a plurality of class queues corresponding to Transmission Container (T-CONT) types, the plurality of ONUs connected to an Optical Line Terminal (OLT) on a Passive Optical Network (PON), includes: a class queue information storage unit storing information regarding a bandwidth allocation period and an allocatable bandwidth amount for each T-CONT type; an allocation check table unit checking the bandwidth allocation period for the T-CONT type received from the class queue information storage unit, and determining an allocatable bandwidth amount for the T-CONT type; and a bandwidth allocation unit allocating an uplink bandwidth to the T-CONT type with reference to the bandwidth allocation period and the allocatable bandwidth amount for the T-CONT type, and re-allocating to each ONU an uplink bandwidth remaining after allocating a total uplink bandwidths to all T-CONT types.

Abstract translation: 提供了一种用于在基于时分多址接入的无源光网络（TDMA PON）上有效且动态地分配带宽的装置和方法。 用于包括对应于传输容器（T-CONT）类型的多个类队列的多个光网络单元（ONU）的上行链路数据传输的动态带宽分配装置，连接到光线路终端（OLT）上的多个ONU 无源光网络（PON）包括：类队列信息存储单元，存储关于每个T-CONT类型的带宽分配周期和可分配带宽量的信息; 分配检查表单元，检查从类队列信息存储单元接收到的T-CONT类型的带宽分配周期，以及确定T-CONT类型的可分配带宽量; 以及带宽分配单元，参照带宽分配期间和T-CONT类型的可分配带宽量向T-CONT类型分配上行链路带宽，并且在分配总上行链路之后向每个ONU重新分配剩余的上行链路带宽 所有T-CONT类型的带宽。

公开(公告)号：US20100135665A1

公开(公告)日：2010-06-03

申请号：US12572148

申请日：2009-10-01

Applicant: Mun-seob Lee ,  Byung-tak Lee ,  Jong-deog Kim ,  Bin-yeong Yoon ,  Dong-soo Lee ,  Jai-sang Koh ,  Hark Yoo

Inventor： Mun-seob Lee ,  Byung-tak Lee ,  Jong-deog Kim ,  Bin-yeong Yoon ,  Dong-soo Lee ,  Jai-sang Koh ,  Hark Yoo

IPC: H04J14/08 ,  H04B10/00

CPC classification number: H04B10/29 ,  H04J3/0682 ,  H04Q11/0067

Abstract: A burst mode optical repeater is provided. The burst mode optical repeater receives optical signals, which are transmitted from a plurality of optical network units (ONUs) in a passive optical network (PON) to a central office using a time division multiplexing access (TDMA) method, and relays the received optical signals using an optical-electrical-optical (OEO) method. Since the burst mode optical repeater can be installed anywhere between an optical line terminal (OLT) and the ONUs, the number of subscribers and transmission range that can be supported by a corresponding network can be increased.

Abstract translation: 提供突发模式光中继器。 突发模式光中继器接收使用时分复用接入（TDMA）方法从无源光网络（PON）中的多个光网络单元（ONU）向中心局发送的光信号，并且中继所接收的光 信号使用光电（OEO）方法。 由于突发模式光中继器可以安装在光线路终端（OLT）和ONU之间的任何地方，因此可以增加相应网络可以支持的用户数量和传输范围。

公开(公告)号：US07602171B2

公开(公告)日：2009-10-13

申请号：US11518981

申请日：2006-09-12

Applicant: Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

Inventor： Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

IPC: G01R31/28 ,  G11C29/00

CPC classification number: G11C29/56 ,  G01R31/2808 ,  G11C5/04 ,  G11C29/56016

Abstract: A system for testing memory modules having a rotating-type board mounting portion with a plurality of mounting surfaces positioned at different planes and connected around an axis to form a rotatable structure, at least one circuit board mounted on each mounting surface, an input/output portion, a rotational motor coupled to a rotational shaft for rotating the rotatable structure, and a central controller electrically connected to the circuit boards.

Abstract translation: 一种用于测试具有旋转型板安装部分的存储器模块的系统，其具有位于不同平面上的多个安装表面并且围绕轴线连接以形成可旋转结构，安装在每个安装表面上的至少一个电路板，输入/输出 耦合到用于旋转可旋转结构的旋转轴的旋转电机，以及电连接到电路板的中央控制器。

公开(公告)号：US5939032A

公开(公告)日：1999-08-17

申请号：US842503

申请日：1997-04-24

Applicant: Sung-chul Kang ,  Dong-soo Lee

Inventor： Sung-chul Kang ,  Dong-soo Lee

IPC: B01D63/06 ,  B01D71/26 ,  B01D71/32 ,  B01J7/00 ,  B01J8/00 ,  B01J8/06 ,  B01J23/42 ,  C01B13/02 ,  C02F1/58 ,  G01N5/00 ,  G01N33/00 ,  G01N33/18 ,  H01L21/66

CPC classification number: G01N5/00 ,  B01J7/00 ,  B01J8/009 ,  B01J8/06 ,  C01B13/0214 ,  G01N33/18 ,  G01N2033/0095 ,  Y10T436/206664 ,  Y10T436/25125 ,  Y10T436/25875

Abstract: An apparatus and method for on-line decomposition of a hydrogen peroxide solution, for use in fabricating a semiconductor device, includes a membrane tube having a porous plug inserted in each end, with the porous plugs defining a space where a platinum catalyst is disposed. A first coupling tube is inserted into one end of the membrane tube to supply a hydrogen peroxide sample to the membrane tube. The hydrogen peroxide contained in hydrogen peroxide sample is decomposed into water and oxygen gas according to an action of the platinum catalyst. A second coupling tube is inserted into a second end of the membrane tube to discharge a diluted hydrogen peroxide solution to an analytical instrument, where the decomposed hydrogen peroxide solution is analyzed on-line.

公开(公告)号：US09524503B2

公开(公告)日：2016-12-20

申请号：US12279338

申请日：2007-02-09

Applicant: Dong-soo Lee

Inventor： Dong-soo Lee

IPC: G06F17/20 ,  G06Q30/02

CPC classification number: G06Q30/02

Abstract: A game exposing method and system is provided. The game exposing method includes displaying a game web site in a first folder of a file manager application of a user terminal; and displaying a game provided from the game web site in a second folder of the file manager application. Accordingly, it is possible to easily access the game portal web site and the game pages to play the games while operating in the file manager application.

Abstract translation: 提供游戏曝光方法和系统。 游戏曝光方法包括在用户终端的文件管理器应用的第一文件夹中显示游戏网站; 以及在所述文件管理器应用的第二文件夹中显示从所述游戏网站提供的游戏。 因此，可以容易地访问游戏门户网站和游戏页面，以在文件管理器应用程序中操作时玩游戏。

公开(公告)号：US09484087B2

公开(公告)日：2016-11-01

申请号：US13483578

申请日：2012-05-30

Applicant: Chang-bum Lee ,  Chang-jung Kim ,  Young-bae Kim ,  Myoung-jae Lee ,  Dong-soo Lee ,  Man Chang ,  Seung-ryul Lee ,  Kyung-min Kim

Inventor： Chang-bum Lee ,  Chang-jung Kim ,  Young-bae Kim ,  Myoung-jae Lee ,  Dong-soo Lee ,  Man Chang ,  Seung-ryul Lee ,  Kyung-min Kim

IPC: H01L47/00 ,  G11C11/56 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C11/5685 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1658 ,  H01L45/1675

Abstract: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.

Abstract translation: 在一个实施例中，存储元件可以包括第一电极，与第一电极间隔开的第二电极，在第一电极和第二电极之间的存储层，以及在存储层和第二电极之间的辅助层。 辅助层向存储器层提供多位存储器特性。

公开(公告)号：US09306008B2

公开(公告)日：2016-04-05

申请号：US14207880

申请日：2014-03-13

Applicant: Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

Inventor： Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L21/336 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L21/322 ,  H01L29/78 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Abstract translation: 本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。 半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。 吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。