公开(公告)号：US20220344164A1

公开(公告)日：2022-10-27

申请号：US17761464

申请日：2020-09-10

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA ,  Takamasa NAKAMURA ,  Tsuneo TORIKOSHI ,  Hirofumi OTAKI

IPC: H01L21/304 ,  G06K9/62 ,  G06N20/00 ,  H01L21/02

Abstract: A device includes: state information acquisition unit that acquires state information including position of substrate in the device and elapsed time in each unit; action selection unit having prediction model that predicts value, in a certain state, to performing action whether to take out new substrate from the cassette and to which processing unit substrate is transferred, the action selection unit selecting one action based on the prediction model taking, as input, the acquired state information; instruction signal transmission unit that transmits instruction signal so as to perform the selected action; operation result acquisition unit that acquires operation result including number of substrates processed and waiting time; and prediction model update unit that calculates reward based on acquired operation result such that reward increases as the number of substrates processed increases and waiting time is short and that updates the prediction model based on the reward.

公开(公告)号：US20180001437A1

公开(公告)日：2018-01-04

申请号：US15633546

申请日：2017-06-26

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA

IPC: B24B37/005 ,  B24B37/20 ,  G01B7/06 ,  H01L21/66 ,  H01L21/321 ,  H01L21/768

Abstract: A receiving unit receives sensor data output from an eddy current sensor for detecting the film thickness of a polishing object to generate film thickness data. A correcting unit corrects the film thickness data in an inside of the edge of the polishing object based on the film thickness data generated by the receiving unit. The correcting unit corrects the film thickness data generated by the receiving unit in the inside of the edge of the polishing object using the film thickness data generated by the receiving unit in an outside of the edge of the polishing object.

公开(公告)号：US20140259728A1

公开(公告)日：2014-09-18

申请号：US14287616

申请日：2014-05-27

Applicant: EBARA CORPORATION

Inventor： Tomoatsu ISHIBASHI ,  Takahiro OGAWA ,  Kenichi SUGITA ,  Shinji KAJITA ,  Koichi FUKAYA ,  Akira NAKAMURA

IPC: H01L21/02

CPC classification number: H01L21/02054 ,  H01L21/02074 ,  H01L21/67034

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ.

Abstract translation: 基板干燥装置包括干燥气体喷嘴，其构成为，假设基板W的表面WA为投影面，关于喷嘴移动方向Dr的干燥气体流量Gf，与基板W的碰撞位置Gfw位于 在喷出位置Gfv'的下游，喷出位置Gfv'是从投影在投影面上的干燥气体喷嘴的排出位置。 在三维空间中，干燥气体流Gf倾斜，使得由干燥气体流Gf的轴线Ga和基板W的垂直线Wp形成的角度α在半接触角度 ; / 2通过减去半接触角和角度确定的角度; / 2从90°，半接触角和角度; / 2是接触角的一半。

公开(公告)号：US20220371151A1

公开(公告)日：2022-11-24

申请号：US17765388

申请日：2020-09-16

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA

IPC: B24B37/005 ,  B24B37/20

Abstract: Included are a polishing table provided with an eddy current sensor, the polishing table configured to rotate; a polishing head configured to face the polishing table, the polishing head configured to rotate, the polishing head having a surface which faces the polishing table and to which a substrate is configured to be attached; and a processor configured to generate preprocessed data on a target substrate by executing predetermined preprocessing on an output signal when the eddy current sensor is at each position facing a target substrate during polishing processing of a target substrate to determine a metal line height at at least one position of the target substrate by inputting preprocessed data on the target substrate to a learned machine learning model using a learning data set in which data after predetermined preprocessing is executed on an output signal when the eddy current sensor is at each position facing a substrate is set as an input and a metal line height at at least one position of the substrate is set as an output.

公开(公告)号：US20220316863A1

公开(公告)日：2022-10-06

申请号：US17705910

申请日：2022-03-28

Applicant: EBARA CORPORATION

Inventor： Nachiketa CHAUHAN ,  Keita YAGI ,  Akira NAKAMURA ,  Rohit KAWDE

IPC: G01B11/06

Abstract: A method of producing a model capable of reducing an influence of spectral variation of reflected light from a workpiece, such as a wafer, and capable of determining an accurate film thickness is disclosed. The method includes: determining sample features representing features of sample spectra of reflected lights from a sample having a film; obtaining similarities by calculating a similarity between each of the sample spectra and a representative spectrum; and producing a film-thickness estimation model by performing machine leaning using training data including the sample features, the similarities, and film thicknesses corresponding to the sample spectra.

公开(公告)号：US20200016722A1

公开(公告)日：2020-01-16

申请号：US16504905

申请日：2019-07-08

Applicant: Ebara Corporation

Inventor： Akira NAKAMURA

IPC: B24B37/013 ,  B24B49/10 ,  B24B49/04

Abstract: An output of an eddy current sensor includes an impedance component. A film thickness measuring apparatus obtains film thickness information from the impedance component. Using a non-linear function between the film thickness information and the film thickness, the film thickness is obtained from the film thickness information. When a resistance component and a reactance component of the impedance component are associated with respective axes of a coordinate system having two orthogonal coordinate axes, the film thickness information is a reciprocal of a tangent of an impedance angle which is an angle formed by a straight line connecting a point on the coordinate system corresponding to the impedance component and a predetermined reference point, and a predetermined straight line.

公开(公告)号：US20170368661A1

公开(公告)日：2017-12-28

申请号：US15633464

申请日：2017-06-26

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA

IPC: B24B37/013 ,  B24B49/08 ,  B24B49/16 ,  B24B49/02 ,  B24B49/12

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/08 ,  B24B49/12 ,  B24B49/16

Abstract: A polishing unit polishes a semiconductor wafer. An eddy current sensor measures an eddy current variable according to variation of the film thickness of the semiconductor wafer at plural measurement times. A sensor processor calculates the film thickness of the semiconductor wafer at the measurement times based on the eddy current measured by the eddy current sensor. A film thickness estimating unit estimates film thicknesses after lapse of a processing delay time from the measurement times by using the calculated film thickness.

公开(公告)号：US20170259394A1

公开(公告)日：2017-09-14

申请号：US15438505

申请日：2017-02-21

Applicant: EBARA CORPORATION

Inventor： Taro TAKAHASHI ,  Akira NAKAMURA ,  Hiroaki SHIBUE ,  Mitsuo TADA

IPC: B24B37/013 ,  H01L21/304 ,  H01L21/67 ,  B24B37/20 ,  B24B37/30

CPC classification number: B24B37/013 ,  B24B37/20 ,  B24B37/30 ,  H01L21/304 ,  H01L21/67092 ,  H01L22/14 ,  H01L22/26

Abstract: An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

公开(公告)号：US20170095901A1

公开(公告)日：2017-04-06

申请号：US15283212

申请日：2016-09-30

Applicant: EBARA CORPORATION

Inventor： Akira NAKAMURA

IPC: B24B37/013 ,  B24B49/10 ,  B24B37/22 ,  B24B37/20

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B37/22 ,  B24B37/26 ,  B24B49/04 ,  B24B49/105

Abstract: The polishing apparatus has: a polishing pad that has a polishing surface to polish a semiconductor wafer; a polishing table to which a back surface of the polishing pad on an opposite side of the polishing surface can be attached; a top ring that is opposed to the polishing surface, and can hold the semiconductor wafer; and an eddy current sensor that is arranged in the polishing table, and detects an end point of polishing. The polishing table has on an attachment surface a projection member projecting from the attachment surface to which the polishing pad is attached. The back surface of the polishing pad has a concave portion in a portion opposed to the projection member, and at least a part of the eddy current sensor is arranged inside the projection member.

公开(公告)号：US20160207162A1

公开(公告)日：2016-07-21

申请号：US15051928

申请日：2016-02-24

Applicant: EBARA CORPORATION

Inventor： Hiroyuki SHINOZAKI ,  Takahiro SHIMANO ,  Akira IMAMURA ,  Akira NAKAMURA

IPC: B24B37/005

CPC classification number: B24B37/005 ,  B24B37/042 ,  B24B49/02 ,  B24B49/04 ,  B24B49/18 ,  B24B49/186 ,  B24B53/005 ,  B24B53/017 ,  B24B53/08

Abstract: A method is capable of monitoring the polishing surface of the polishing pad without removing the polishing pad from the polishing table. The method includes: conditioning the polishing surface of the polishing pad by causing a rotating dresser to oscillate on the polishing surface; measuring a height of the polishing surface when the conditioning of the polishing surface is performed; calculating a position of a measuring point of the height on a two-dimensional surface defined on the polishing surface; and repeating the measuring of the height of the polishing surface and the calculating of the position of the measuring point to create height distribution in the polishing surface.