公开(公告)号：US11781066B2

公开(公告)日：2023-10-10

申请号：US17747731

申请日：2022-05-18

Applicant: ENTEGRIS, INC.

Inventor： YoungMin Kim ,  Michael White ,  Daniela White ,  Emanuel Cooper ,  Steven M. Bilodeau

IPC: C09K13/06 ,  H01L21/311 ,  H01J37/32

CPC classification number: C09K13/06 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/31111

Abstract: The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

公开(公告)号：US11149235B2

公开(公告)日：2021-10-19

申请号：US16515935

申请日：2019-07-18

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Elizabeth Thomas ,  Jun Liu ,  Michael White ,  Chao-Yu Wang ,  Donald Frye

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02 ,  C11D7/34

Abstract: A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

公开(公告)号：US11124740B2

公开(公告)日：2021-09-21

申请号：US16689850

申请日：2019-11-20

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Michael White ,  Daniela White

IPC: C11D7/32 ,  C11D3/28 ,  C11D1/72 ,  H01L21/02 ,  C11D3/36 ,  C11D3/30

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

公开(公告)号：US11085011B2

公开(公告)日：2021-08-10

申请号：US16527809

申请日：2019-07-31

Applicant: ENTEGRIS, INC.

Inventor： Elizabeth Thomas ,  Michael White ,  Daniela White ,  Atanu Kumar Das

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/30 ,  C11D3/39 ,  C11D3/395 ,  C11D3/20 ,  H01L21/02 ,  C11D3/37 ,  C11D3/22

Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.

公开(公告)号：US20180204736A1

公开(公告)日：2018-07-19

申请号：US15874388

申请日：2018-01-18

Applicant: Entegris, Inc.

Inventor： Daniela White ,  Thomas Parson ,  Michael White ,  Emmanuel I. Cooper ,  Atanu Das

IPC: H01L21/321 ,  C09G1/16 ,  C09G1/04 ,  C01F17/00 ,  C08L33/10 ,  C08L33/08

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.