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138 条记录 (耗时 0.035 秒)

    Method for reducing tip-to-tip spacing between lines
    15.
    发明授权
    Method for reducing tip-to-tip spacing between lines 有权
    减少线间距尖端间距的方法

    公开(公告)号：US08361704B2

    公开(公告)日：2013-01-29

    申请号：US12352051

    申请日：2009-01-12

    申请人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    发明人： Matthew E. Colburn ,  Wai-kin Li ,  Haining S. Yang

    IPC分类号： G03F7/20

    CPC分类号： G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： This invention provides a method for reducing tip-to-tip spacing between lines using a combination of photolithographic and copolymer self-assembling lithographic techniques. A mask layer is first formed over a substrate with a line structure. A trench opening of a width d is created in the mask layer. A layer of a self-assembling block copolymer is then applied over the mask layer. The block copolymer layer is annealed to form a single unit polymer block of a width or a diameter w which is smaller than d inside the trench opening. The single unit polymer block is selectively removed to form a single opening of a width or a diameter w inside the trench opening. An etch transfer process is performed using the single opening as a mask to form an opening in the line structure in the substrate.

    摘要翻译： 本发明提供了使用光刻和共聚物自组装光刻技术的组合来减少线之间的尖端到尖端间隔的方法。 首先在具有线结构的衬底上形成掩模层。 在掩模层中形成宽度为d的沟槽开口。 然后将一层自组装嵌段共聚物施加在掩模层上。 对嵌段共聚物层进行退火以在沟槽开口内形成宽度或直径w小于d的单一单元聚合物嵌段。 选择性地去除单个单元聚合物嵌段以在沟槽开口内形成宽度或直径w的单个开口。 使用单个开口作为掩模进行蚀刻转印处理，以在基板中的线结构中形成开口。

    Chemical trim of photoresist lines by means of a tuned overcoat
    16.
    发明授权
    Chemical trim of photoresist lines by means of a tuned overcoat 有权
    通过调整的外涂层对光致抗蚀剂线进行化学修饰

    公开(公告)号：US08137893B2

    公开(公告)日：2012-03-20

    申请号：US12983297

    申请日：2011-01-01

    申请人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    发明人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/40 ,  Y10T428/24802

    摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译： 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。 可选地，重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    Method for removing residues from a patterned substrate
    17.
    发明授权
    Method for removing residues from a patterned substrate 失效
    从图案化衬底去除残留物的方法

    公开(公告)号：US08053368B2

    公开(公告)日：2011-11-08

    申请号：US12055648

    申请日：2008-03-26

    申请人： Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes

    发明人： Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0276 ,  G03F7/091 ,  G03F7/40

    摘要： The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.

    摘要翻译： 本发明涉及一种用于从图案化衬底的开放区域去除残留物的方法，包括以下步骤：在衬底上提供可显影抗反射涂层（DBARC）的层; 在所述DBARC层上提供一层光致抗蚀剂; 将所述光致抗蚀剂层和所述DBARC层图案化地曝光到辐射; 用第一显影剂显影所述光致抗蚀剂层和所述DBARC层以在所述光致抗蚀剂和DBARC层中形成图案化结构; 在所述图案化结构上沉积一层显影剂可溶性材料; 并用第二显影剂除去所述显影剂可溶性材料。

    Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom
    19.
    发明授权
    Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom 有权
    使用自组装嵌段共聚物制造自对准纳米结构的方法，以及由其制造的结构

    公开(公告)号：US07993816B2

    公开(公告)日：2011-08-09

    申请号：US12049780

    申请日：2008-03-17

    申请人： Charles T. Black ,  Matthew E. Colburn ,  David L. Rath

    发明人： Charles T. Black ,  Matthew E. Colburn ,  David L. Rath

    IPC分类号： G03F7/26

    CPC分类号： G03F7/039 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern.

    摘要翻译： 在一个实施方案中，本发明提供了一种用于图案化表面的方法，其包括在异质反射表面之上形成嵌段共聚物，其中嵌段共聚物分离成第一和第二单元; 对所述第一单元和第二单元施加辐射，其中所述异质反射表面产生所述第一单元和所述第二单元的暴露部分; 并且施加开发周期以选择性地去除所述分离的共聚物膜的暴露的第一和第二单元中的至少一个以提供图案。