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131 条记录 (耗时 0.036 秒)

    Semiconductor device having a capacitor dielectric element and wiring layers
    14.
    发明授权
    Semiconductor device having a capacitor dielectric element and wiring layers 失效
    具有电容器介质元件和布线层的半导体器件

    公开(公告)号：US6046490A

    公开(公告)日：2000-04-04

    申请号：US132023

    申请日：1998-08-10

    申请人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Yoshihisa Nagano ,  Akihiro Matsuda

    发明人： Koji Arita ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Yoshihisa Nagano ,  Akihiro Matsuda

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L29/40

    CPC分类号： H01L28/55 ,  H01L21/76895

    摘要： A semiconductor device is provided with a multilayered interconnection and a capacitor dielectric element, in which the transistor in the device has a non-degraded characteristics and the degradation of the capacitor dielectric element is suppressed. The semiconductor device has wiring layers connecting to one another through contact holes in insulating layers. One of the insulating layers is formed so as to cover at least a part of the area above the transistor and so as not to cover the area above the capacitor dielectric element. Hydrogen generated by heat-treating the insulating layer is supplied to the transistor to recover the damage in it, while hydrogen is suppressed from arriving at the capacitor element so that the capacitor dielectric element does not degrade.

    摘要翻译： 半导体器件设置有多层互连和电容器介质元件，其中器件中的晶体管具有非劣化特性，并且抑制了电容器介质元件的劣化。 半导体器件具有通过绝缘层中的接触孔彼此连接的布线层。 绝缘层之一形成为覆盖晶体管上方的区域的至少一部分，并且不覆盖电容器介质元件上方的区域。 通过热处理绝缘层产生的氢气被提供给晶体管以恢复其中的损坏，同时抑制氢气到达电容器元件，使得电容器介质元件不劣化。

    Method of making a semiconductor device
    16.
    发明授权
    Method of making a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5943568A

    公开(公告)日：1999-08-24

    申请号：US811664

    申请日：1997-03-05

    申请人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

    发明人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/768 ,  H01L21/822 ,  H01L27/10 ,  H01L21/8242

    CPC分类号： H01L28/40 ,  H01L21/3105 ,  H01L21/76828

    摘要： A method of making a semiconductor device include forming: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element on the first insulating layer, (d) a second insulating layer on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

    摘要翻译： 制造半导体器件的方法包括形成：（a）其表面上形成有集成电路的半导体衬底，（b）半导体器件上的第一绝缘层，并且具有通向集成电路的第一接触孔，（c ）所述第一绝缘层上的电容元件，（d）所述第一绝缘层上的第二绝缘层以覆盖所述电容元件，并且具有分别通向所述电容元件的上下电极的第二接触孔，和 e）分别通过第一和第二接触孔连接到集成电路和电容元件的互连。 该半导体器件的氢密度为1011原子/ cm 2以下。

    Semiconductor memory device reducing hydrogen content
    17.
    发明授权
    Semiconductor memory device reducing hydrogen content 失效
    半导体存储器件具有降低的氢含量

    公开(公告)号：US5644158A

    公开(公告)日：1997-07-01

    申请号：US492690

    申请日：1995-06-20

    申请人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

    发明人： Eiji Fujii ,  Atsuo Inoue ,  Koji Arita ,  Toru Nasu ,  Akihiro Matsuda

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01L21/768 ,  H01L21/822 ,  H01L27/10 ,  H01L21/3205

    CPC分类号： H01L28/40 ,  H01L21/3105 ,  H01L21/76828

    摘要： A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.

    摘要翻译： 一种半导体器件，包括：（a）在其表面上形成集成电路的半导体衬底，（b）形成在半导体器件上并具有通向集成电路的第一接触孔的第一绝缘层，（c）电容元件 形成在所述第一绝缘层上，（d）形成在所述第一绝缘层上以覆盖所述电容元件的第二绝缘层，以及具有分别通向所述电容元件的上下电极的第二接触孔，以及（e） 互连通过第一和第二接触孔分别连接到集成电路和电容元件。 该半导体器件的氢密度为1011原子/ cm 2以下。

    Semiconductor memory device
    19.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US06847074B2

    公开(公告)日：2005-01-25

    申请号：US09785502

    申请日：2001-02-20

    申请人： Yoshihisa Nagano ,  Tooru Nasu ,  Shinichiro Hayashi ,  Eiji Fujii

    发明人： Yoshihisa Nagano ,  Tooru Nasu ,  Shinichiro Hayashi ,  Eiji Fujii

    IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/105 ,  H01L29/72

    CPC分类号： H01L28/75 ,  H01L27/10852 ,  H01L28/55

    摘要： A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.

    摘要翻译： 根据本发明的半导体存储器件包括用于在其上存储数据的存储单元电容器。 电容器由连接到第一和第二电极之间的接触插塞，第二电极和电容绝缘膜的第一电极组成。 第一电极包括与接触塞接触的第一阻挡膜和形成在第一阻挡膜上并防止氧的扩散的第二阻挡膜。 第二阻挡膜覆盖第一阻挡膜的上表面和侧面。