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公开(公告)号：US08288835B2
公开(公告)日：2012-10-16
申请号：US13017844
申请日：2011-01-31
Applicant: Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
Inventor： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC: H01L29/84
CPC classification number: B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
Abstract: Microshells including a perforated pre-sealing layer and an integrated getter layer are provided. The integrated getter layer may be disposed between other layers of a perforated pre-sealing layer. The perforated pre-sealing layer may include at least one perforation, and a sealing layer may be provided on the pre-sealing layer to close the perforation.
Abstract translation: 提供了包括穿孔预密封层和集成吸气剂层的微壳。 集成的吸气剂层可以设置在穿孔预密封层的其它层之间。 穿孔预密封层可以包括至少一个穿孔，并且可以在预密封层上设置密封层以封闭穿孔。
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公开(公告)号：US08258893B2
公开(公告)日：2012-09-04
申请号：US13173432
申请日：2011-06-30
Applicant: Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
Inventor： Emmanuel P. Quevy , David H. Bernstein , Mehrnaz Motiee
CPC classification number: H03H9/2457 , H03H3/0072 , H03H3/0076 , H03H9/02409 , H03H9/2463 , H03H2009/02299 , H03H2009/02307 , H03H2009/0233 , H03H2009/02472 , H03H2009/02511 , H03H2009/02519
Abstract: A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.
Abstract translation: 微机电系统（MEMS）装置包括调谐电极，驱动电极和谐振器。 谐振器被锚固到衬底并且被配置为响应于驱动电极上的信号而谐振。 MEMS器件包括耦合到谐振器并且定位在调谐电极上方的调谐板。 调谐板被配置为响应谐振器和调谐电极之间的电压差来调节谐振器的谐振频率。 在MEMS器件的至少一个实施例中，调谐板和调谐电极被配置为基本上独立于驱动电极上的信号来调节谐振器的谐振频率。
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13.发明授权公开(公告)号：US07982550B1
公开(公告)日：2011-07-19
申请号：US12217190
申请日：2008-07-01
Applicant: Emmanuel P. Quevy , Manu Seth
Inventor： Emmanuel P. Quevy , Manu Seth
IPC: H03B5/32
Abstract: An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.
Abstract translation: 一种用于补偿两个振荡器频率的温度系数不匹配以匹配温度范围内两个振荡器频率之间的期望频率比的装置和方法。 在温度传感器的一个实施例中，具有不同温度特性的第一和第二振荡器耦合到差分鉴频器（DFD）电路。 DFD电路补偿不同的特性，以便在温度范围内匹配第一和第二频率之间的频率差。
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14.发明授权MEMS structure having a stress inverter temperature-compensated resonator member 有权具有应力逆变器温度补偿谐振器构件的MEMS结构公开(公告)号：US07956517B1
公开(公告)日：2011-06-07
申请号：US12204713
申请日：2008-09-04
Applicant: Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
Inventor： Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
IPC: H01L23/34
CPC classification number: H03H3/0076 , B81B3/0072 , B81B2201/0271 , H03H9/02338 , H03H9/2431 , H03H9/2463 , H03H9/2473 , H03H2009/02496 , H03H2009/02503
Abstract: A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
Abstract translation: 描述了具有温度补偿谐振器元件的MEMS结构。 MEMS结构包括与衬底耦合的不对称应力逆变器部件。 谐振器构件容纳在不对称应力逆变器构件中并悬置在衬底上。 不对称应力逆变器构件用于通过响应于温度变化在谐振器构件上引起应力来改变谐振器构件的频率的热系数。
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15.发明申请METHOD FOR TEMPERATURE COMPENSATION IN MEMS RESONATORS WITH ISOLATED REGIONS OF DISTINCT MATERIAL 有权具有隔离材料隔离区域的MEMS谐振器中的温度补偿方法公开(公告)号：US20100093125A1
公开(公告)日：2010-04-15
申请号：US12638919
申请日：2009-12-15
Applicant: Emmanuel P. Quevy , David H. Bernstein
Inventor： Emmanuel P. Quevy , David H. Bernstein
IPC: H01L21/30
CPC classification number: B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。
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Patent Agency Ranking
公开(公告)号：US08471641B2
公开(公告)日：2013-06-25
申请号：US13173815
申请日：2011-06-30
Applicant: Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
Inventor： Emmanuel P. Quevy , Manu Seth , Mehrnaz Motiee
IPC: H03B5/30
CPC classification number: H03B5/06 , H03B5/323 , H03B2200/0082 , H03H9/02259 , H03H9/2457 , H03H2009/02496 , H03H2009/02511
Abstract: A MEMS oscillator includes a resonator body and primary and secondary drive electrodes to electrostatically drive the resonator body. Primary and secondary sense electrodes sense motion of the resonator body. The primary and secondary drive and sense electrodes are configured to be used together during start-up of the MEMS oscillator. The secondary drive electrode and secondary sense electrode are disabled after start-up, while the primary drive and sense electrodes remain enabled to maintain oscillation.
Abstract translation: MEMS振荡器包括谐振器体和用于静电驱动谐振器体的初级和次级驱动电极。 初级和次级感测电极感测谐振器体的运动。 主驱动和感测电极被配置为在MEMS振荡器启动期间一起使用。 辅助驱动电极和次级感测电极在启动后禁用，而主驱动电极和感测电极保持启用以保持振荡。
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17.发明授权Method for temperature compensation in MEMS resonators with isolated regions of distinct material 有权具有不同材料隔离区域的MEMS谐振器中的温度补偿方法公开(公告)号：US08464418B2
公开(公告)日：2013-06-18
申请号：US12638919
申请日：2009-12-15
Applicant: Emmanuel P. Quevy , David H. Bernstein
Inventor： Emmanuel P. Quevy , David H. Bernstein
CPC classification number: B81C1/0069 , B81C1/00349 , B81C1/00523 , G02B6/358 , H03H3/0076 , H03H9/2405 , H03H9/2457 , H03H2009/02496 , H03H2009/2442 , Y10T29/42 , Y10T29/49005 , Y10T29/49165
Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.
Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。
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18.发明授权Temperature compensated oscillator including MEMS resonator for frequency control 有权温度补偿振荡器包括用于频率控制的MEMS谐振器公开(公告)号：US08427251B2
公开(公告)日：2013-04-23
申请号：US11691330
申请日：2007-03-26
Applicant: Emmanuel P. Quevy , Roger T. Howe
Inventor： Emmanuel P. Quevy , Roger T. Howe
IPC: H03B5/30
CPC classification number: G01K7/32 , G04G3/04 , H03H9/02448 , H03H9/2473 , H03H2009/02496
Abstract: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.
Abstract translation: 公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。 与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。
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公开(公告)号：US08349635B1
公开(公告)日：2013-01-08
申请号：US12124043
申请日：2008-05-20
Applicant: Qing Gan , Emmanuel P. Quevy
Inventor： Qing Gan , Emmanuel P. Quevy
IPC: H01L29/84
CPC classification number: G01L9/0019 , B81B7/0038 , B81B7/0064 , G01C19/5783 , G01P2015/088
Abstract: An encapsulated MEMS device and a method to form an encapsulated MEMS device are described. An apparatus includes a first substrate having a silicon-germanium seal ring disposed thereon and a second substrate having a metal seal ring disposed thereon. The metal seal ring is aligned with and bonded to the silicon-germanium seal ring to provide a sealed cavity. A MEMS device is housed in the sealed cavity. A method includes forming a silicon-germanium seal ring on a first substrate and forming a metal seal ring on a second substrate. The metal seal ring is bonded to the silicon-germanium seal ring to provide a sealed cavity that houses a MEMS device.
Abstract translation: 描述了封装的MEMS器件和形成封装的MEMS器件的方法。 一种装置包括：第一基板，其上设置有硅锗密封环;第二基板，其上设置有金属密封环。 金属密封环与硅 - 锗密封环对准并结合，以提供密封腔。 MEMS器件容纳在密封腔中。 一种方法包括在第一基板上形成硅 - 锗密封环并在第二基板上形成金属密封环。 金属密封环被结合到硅 - 锗密封环上以提供容纳MEMS器件的密封腔。
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20.发明申请Temperature compensated oscillator including MEMS resonator for frequency control 有权温度补偿振荡器包括用于频率控制的MEMS谐振器公开(公告)号：US20120229220A1
公开(公告)日：2012-09-13
申请号：US11691330
申请日：2007-03-26
Applicant: Emmanuel P. Quevy , Roger T. Howe
Inventor： Emmanuel P. Quevy , Roger T. Howe
CPC classification number: G01K7/32 , G04G3/04 , H03H9/02448 , H03H9/2473 , H03H2009/02496
Abstract: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.
Abstract translation: 公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。 与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。
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