公开(公告)号：US20250081501A1

公开(公告)日：2025-03-06

申请号：US18951447

申请日：2024-11-18

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: Apparatuses and methods relating to semiconductor layer structures are disclosed. A method for producing a semiconductor layer structure ay involve providing a Si substrate comprising a top surface, forming a first semiconductor layer on the substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures, arranged perpendicularly to the top surface of the substrate, the first semiconductor layer comprising AlN, and epitaxially growing a second semiconductor layer which laterally and vertically encloses the plurality of vertical nanowire structures thereby encapsulating dislocations in shells around the nanowires, wherein the second semiconductor layer comprises AlxGa1-xN, wherein 0≤x≤0.95.

公开(公告)号：US12009431B2

公开(公告)日：2024-06-11

申请号：US17929440

申请日：2022-09-02

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/78 ,  H01L21/02 ,  H01L27/092 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/10 ,  H10N60/83 ,  H10N60/85 ,  G01N27/414 ,  G06N10/00 ,  H01L29/417

CPC classification number: H01L29/7851 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/0924 ,  H01L29/0676 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/20 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H10N60/128 ,  H10N60/83 ,  H10N60/85 ,  G01N27/4146 ,  G06N10/00 ,  H01L29/41791

Abstract: A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

公开(公告)号：US20230352575A1

公开(公告)日：2023-11-02

申请号：US17999605

申请日：2021-05-27

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7788 ,  H01L29/0676 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/0646 ,  H01L29/2003

Abstract: There is provided a vertical high-electron-mobility transistor, HEMT (100), comprising: a drain contact (410), a nanowire layer (500) arranged on the drain contact (410) and comprising at least one vertical nanowire (510) and a supporting material (520) laterally enclosing the at least one vertical nanowire (510), a heterostructure (600) arranged on the nanowire layer and comprising an AIGaN-layer (610) and a GaN-layer (620) together forming a heterojunction, at least one source contact (420a, 420b) in contact with the heterostructure (600), and a gate contact (430) in contact with the heterostructure (600), arranged above the at least one vertical nanowire (510), wherein the at least one vertical nanowire (510) is forming an electron transport channel between the drain contact and the heterostructure. There is also provided a method for producing a vertical HEMT (100).

公开(公告)号：US20220416025A1

公开(公告)日：2022-12-29

申请号：US17929440

申请日：2022-09-02

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/06 ,  H01L29/20 ,  H01L27/092 ,  H01L39/08 ,  H01L21/02 ,  H01L33/32 ,  H01L29/16 ,  H01L29/775 ,  H01L39/22 ,  H01L33/06 ,  H01L33/24 ,  H01L39/12 ,  G06N10/00 ,  G01N27/414

Abstract: A reinforced thin-film device is disclosed. The reinforced thin-film device comprising: a substrate having a top surface for supporting an epilayer; a mask layer patterned with a plurality of nanosize cavities disposed on said substrate to form a needle pad; a thin-film of, relative to the substrate, lattice-mismatched semiconductor disposed on said mask layer, wherein said thin-film comprises a plurality of in parallel spaced semiconductor needles of said lattice-mismatched semiconductor embedded in said thin-film, wherein said plurality of semiconductor needles are vertically disposed in the axial direction towards said substrate in said plurality of nanosize cavities of said mask layer; a, relative to the substrate, lattice-mismatched semiconductor epilayer provided on said thin-film and supported thereby; and a FinFET transistor arranged on the lattice-mismatched semiconductor epilayer. The FinFET transistor comprising: a fin semiconductor structure comprising an elongate protruding core portion, the fin semiconductor structure being arranged on the lattice-mismatched semiconductor epilayer, a first and a second nanostructured electrode radially enclosing respectively a source end and a drain end of the protruding core portion, and a nanostructured gate electrode radially enclosing a central portion of the protruding core portion, the central portion being a portion of the protruding core portion between the source end and the drain end.

公开(公告)号：US20220399826A1

公开(公告)日：2022-12-15

申请号：US17755142

申请日：2020-10-22

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H02M7/217 ,  H02J7/02 ,  B60L50/60 ,  B60L53/24 ,  H02M1/00 ,  H01L29/778 ,  H01M50/204

Abstract: There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

公开(公告)号：US11469300B2

公开(公告)日：2022-10-11

申请号：US17049535

申请日：2019-04-23

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H01L29/06 ,  H01L21/02 ,  H01L27/092 ,  H01L29/16 ,  H01L29/20 ,  H01L29/775 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L39/08 ,  H01L39/12 ,  H01L39/22 ,  G06N10/00 ,  G01N27/414

Abstract: A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.

公开(公告)号：US20240380369A1

公开(公告)日：2024-11-14

申请号：US18771869

申请日：2024-07-12

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/24 ,  H03F3/195

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

公开(公告)号：US20230261621A1

公开(公告)日：2023-08-17

申请号：US18297526

申请日：2023-04-07

Applicant: EPINOVATECH AB

Inventor： Martin Andreas Olsson

IPC: H03F3/24 ,  H03F3/195

CPC classification number: H03F3/245 ,  H03F3/195 ,  H03F2200/451

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module which may include: a gallium nitride structure supported by a silicon substrate, a silicon-based transmit/receive switch having a transmit mode and a receive mode, a transmit amplifier configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, formed in said gallium nitride structure. The MMIC front-end module may further include a receive amplifier configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected to said transmit/receive switch, wherein said receive amplifier may include a gallium nitride HEMT formed in said gallium nitride structure.

公开(公告)号：US20230119801A1

公开(公告)日：2023-04-20

申请号：US17905908

申请日：2021-03-10

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: H03K19/17728 ,  H03K19/17736 ,  H03K19/1776

Abstract: There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120)comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

公开(公告)号：US20220396886A1

公开(公告)日：2022-12-15

申请号：US17835804

申请日：2022-06-08

Applicant: Epinovatech AB

Inventor： Martin Andreas Olsson

IPC: C25B1/04 ,  C25B9/23 ,  C25B9/50 ,  C25B11/049 ,  C25B11/046

Abstract: A device for performing electrolysis of water is disclosed. The device comprising: a semiconductor structure comprising a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface, the electron guiding layer of the semiconductor structure comprising an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material; at least one metal cathode arranged on the surface of the semiconductor structure; and at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode comprises a plurality of quantum dots of InxGa(1−x)N material, wherein 0.4≤x≤1. A system comprising such device is also disclosed.