Light emitting device and fabrication method thereof
    12.
    发明申请
    Light emitting device and fabrication method thereof 有权
    发光元件及其制造方法

    公开(公告)号:US20090274188A1

    公开(公告)日:2009-11-05

    申请号:US12289948

    申请日:2008-11-07

    IPC分类号: H01S5/026 H01L33/00

    摘要: Disclosed herein is a light emitting device with improved life characteristics. The light emitting device comprises a circuit board having a recess, a reflection plane and an excitation source disposed in the recess, an overmolding overlying the reflection plane and the excitation source, a surface-inducing film formed on the overmolding, and a light conversion layer overlying the surface-inducing film. Also disclosed herein is a method for fabricating the light emitting device.

    摘要翻译: 本文公开了具有改善寿命特性的发光器件。 发光装置包括具有设置在凹部中的凹部,反射面和激发源的电路板,覆盖反射面和激发源的包覆成型,形成在二次成型上的表面感应膜,以及光转换层 覆盖表面诱导膜。 本文还公开了一种制造发光器件的方法。

    Optoelectronic device and stacking structure
    13.
    发明授权
    Optoelectronic device and stacking structure 有权
    光电器件和堆叠结构

    公开(公告)号:US09193900B2

    公开(公告)日:2015-11-24

    申请号:US13467763

    申请日:2012-05-09

    IPC分类号: H01L51/54 C09K11/02 H01L33/44

    摘要: Provided is an optoelectronic device that includes: a light source; an emission layer disposed on the light source and including light emitting particles dispersed in a matrix polymer; and a polymer film disposed on the emission layer. The polymer film includes two layers: a first layer including a first polymer and a second layer including a second polymer. The first polymer includes a polymerized product of a first monomer including at least two thiol (—SH) groups and a siloxane-based second monomer or oligomer including at least one carbon-carbon unsaturated bond at a terminal end, and the second polymer includes a polymerized product of a third monomer including at least two thiol (—SH) groups and a fourth monomer including at least two carbon-carbon unsaturated bonds at a terminal end.

    摘要翻译: 提供了一种光电子器件,其包括:光源; 发光层,其设置在所述光源上,并且包含分散在基质聚合物中的发光粒子; 以及设置在发光层上的聚合物膜。 聚合物膜包括两层:包含第一聚合物的第一层和包含第二聚合物的第二层。 第一聚合物包括包含至少两个硫醇(-SH)基团的第一单体和在末端包含至少一个碳 - 碳不饱和键的硅氧烷基第二单体或低聚物的聚合产物,第二聚合物包括 包含至少两个硫醇(-SH)基团的第三单体和在末端包含至少两个碳 - 碳不饱和键的第四单体的聚合产物。

    Method for fabricating an electroluminescence device
    14.
    发明授权
    Method for fabricating an electroluminescence device 有权
    电致发光器件的制造方法

    公开(公告)号:US08440480B2

    公开(公告)日:2013-05-14

    申请号:US13196388

    申请日:2011-08-02

    IPC分类号: H01L51/56

    摘要: A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further included is a method for fabricating the nanocrystal electroluminescence device.

    摘要翻译: 纳米晶体电致发光器件包括聚合物空穴传输层,纳米晶体发光层和有机电子传输层,其中纳米晶体发光层独立且分别地形成在聚合物空穴传输层和有机电子传输层之间。 根据纳米晶体电致发光器件,由于空穴传输层,纳米晶体发光层和电子传输层彼此完全分离,所以电致发光器件提供纯的纳米晶体发光光谱,其具有来自其它有机层的发光有限并且基本上不含 受操作条件的影响,如电压。 还包括制造纳米晶体电致发光器件的方法。

    Nanocrystal-metal oxide complex comprising at least two different surfactants and method for preparing the same
    16.
    发明授权
    Nanocrystal-metal oxide complex comprising at least two different surfactants and method for preparing the same 有权
    包含至少两种不同表面活性剂的纳米晶体金属氧化物络合物及其制备方法

    公开(公告)号:US08252416B2

    公开(公告)日:2012-08-28

    申请号:US11932249

    申请日:2007-10-31

    IPC分类号: B32B5/16

    摘要: Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with a metal oxide precursor and enable maintenance of luminescent and electrical properties of the nanocrystal. The nanocrystal-metal oxide complex exhibits superior optical and chemical stability and secures high luminescent efficiency of the nanocrystal. Accordingly, when the nanocrystal-metal oxide complex is used as a luminescent material of an electroluminescent device, it can improve luminescent efficiency and reliability of products. Further disclosed herein is a method for preparing the nanocrystal-metal oxide complex.

    摘要翻译: 本文公开了纳米晶体 - 金属氧化物络合物。 纳米晶体 - 金属氧化物络合物的纳米晶体被两种或更多种不同类型的表面活性剂所取代,这些表面活性剂可以与金属氧化物前体混溶并且能维持纳米晶体的发光和电学性能。 纳米晶体 - 金属氧化物络合物表现出优异的光学和化学稳定性并且确保了纳米晶体的高发光效率。 因此,当纳米晶金属氧化物配合物用作电致发光器件的发光材料时,可以提高产品的发光效率和可靠性。 本文进一步公开的是制备纳米晶体 - 金属氧化物络合物的方法。

    Method for manufacturing metal sulfide nnocrystals using thiol compound as sulfur precursor
    18.
    发明申请
    Method for manufacturing metal sulfide nnocrystals using thiol compound as sulfur precursor 有权
    使用硫醇化合物作为硫前体制备金属硫化物nnocrystals的方法

    公开(公告)号:US20080297044A1

    公开(公告)日:2008-12-04

    申请号:US12219222

    申请日:2008-07-17

    IPC分类号: H01L51/54 C07C319/14

    摘要: A metal sulfide nanocrystal manufactured by a method of reacting a metal precursor and an alkyl thiol in a solvent, wherein the alkyl thiol reacts with the metal precursor to form the metal sulfide nanocrystals, wherein the alkyl thiol is present on the surface of the metal sulfide nanocrystal, wherein the alkyl thiol is bonded to the sulfur crystal lattice. A metal sulfide nanocrystal manufactured with a core-shell structure by a method of reacting a metal precursor and an alkyl thiol in a solvent to form a metal sulfide layer on the surface of a core, wherein the alkyl thiol is present on the surface of the metal sulfide nanocrystal, wherein the alkyl thiol is bonded to the sulfur crystal lattice. These metal sulfide nanocrystals can have a uniform particle size at the nanometer-scale level, selective and desired crystal structures, and various shapes.

    摘要翻译: 一种金属硫化物纳米晶体,其通过金属前体和烷基硫醇在溶剂中反应的方法制备,其中烷基硫醇与金属前体反应形成金属硫化物纳米晶体,其中烷基硫醇存在于金属硫化物的表面上 纳米晶体,其中烷基硫醇与硫晶格结合。 一种金属硫化物纳米晶体,其通过使金属前体和烷基硫醇在溶剂中反应以在芯的表面上形成金属硫化物层的方法以核 - 壳结构制造,其中烷基硫醇存在于 金属硫化物纳米晶体,其中烷基硫醇与硫晶格结合。 这些金属硫化物纳米晶体可以在纳米级具有均匀的粒度,选择性和期望的晶体结构以及各种形状。

    HETEROSTRUCTURE SEMICONDUCTOR NANOWIRES AND METHOD FOR PRODUCING THE SAME
    19.
    发明申请
    HETEROSTRUCTURE SEMICONDUCTOR NANOWIRES AND METHOD FOR PRODUCING THE SAME 有权
    异构半导体纳米微粒及其制造方法

    公开(公告)号:US20080168943A1

    公开(公告)日:2008-07-17

    申请号:US11835778

    申请日:2007-08-08

    IPC分类号: C30B19/00

    摘要: Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.

    摘要翻译: 本文公开了异质结构半导体纳米线。 异质结构半导体纳米线包括从半导体纳米晶种子的表面沿选定方向生长的半导体纳米晶种子和半导体纳米晶体线,其中半导体纳米晶种与半导体纳米晶体线的组成不同。 进一步公开了用于制造异质结构半导体纳米线的方法。