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    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN
    14.
    发明申请
    NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN 有权
    负面图案形成方法和阻力图

    公开(公告)号：US20130266777A1

    公开(公告)日：2013-10-10

    申请号：US13904236

    申请日：2013-05-29

    Applicant: FUJIFILM Corporation

    Inventor： Keita KATO ,  Kana FUJII ,  Sou KAMIMURA ,  Kaoru IWATO

    IPC: G03F7/20

    CPC classification number: G03F7/20 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

    Abstract: A negative pattern forming method, includes: (i) forming a film having a film thickness of 200 nm or more from a chemical amplification resist composition containing (A) a resin capable of increasing a polarity of the resin (A) by an action of an acid to decrease a solubility of the resin (A) for a developer containing one or more organic solvents, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film with a developer containing one or more organic solvents.

    Abstract translation: 负图案形成方法包括：（i）从含有（A）树脂（A）的树脂的树脂（A）的极性增加的树脂的化学放大抗蚀剂组合物形成膜厚度为200nm以上的膜， 降低对含有一种或多种有机溶剂的显影剂的树脂（A）的溶解度的酸，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）使膜曝光，形成曝光膜; 和（iii）用含有一种或多种有机溶剂的显影剂显影曝光的薄膜。

    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
    15.
    发明申请
    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
    图案形成方法，化学放大电阻组合物和电阻膜

    公开(公告)号：US20130115556A1

    公开(公告)日：2013-05-09

    申请号：US13729752

    申请日：2012-12-28

    Applicant: FUJIFILM Corporation

    Inventor： Kaoru IWATO ,  Shohei KATAOKA

    IPC: G06F1/20

    CPC classification number: G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325 ,  Y10S430/108

    Abstract: A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.

    Abstract translation: 图案形成方法包括：（i）从化学增幅抗蚀剂组合物形成膜，该组合物含有（A）能提高树脂（A）极性的树脂，以降低树脂（A）对显色剂的溶解度 通过酸的作用含有有机溶剂，（B）在用光化射线或辐射照射时能够产生酸的化合物和（C）溶剂; （ii）曝光胶片; 和（iii）通过使用包含有机溶剂的显影剂进行显影，其中树脂（A）具有极性基团被离去基团保护的结构，其能够通过酸的作用分解和离开，并且离开 基团含有氟原子。

    PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
    17.
    发明申请
    PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE 有权
    图案形成方法，通过该方法形成的电阻图案，使用其制造电子器件的方法和电子器件

    公开(公告)号：US20150253673A1

    公开(公告)日：2015-09-10

    申请号：US14719830

    申请日：2015-05-22

    Applicant: FUJIFILM Corporation

    Inventor： Kaoru IWATO ,  Takanobu TAKEDA ,  Hiroo TAKIZAWA

    IPC: G03F7/30

    CPC classification number: G03F7/30 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/30604

    Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

    Abstract translation: 提供了一种图案形成方法，其包括（1）通过含有能够通过酸的作用增加极性的树脂（A）的光化射线敏感性或辐射敏感性树脂组合物形成膜，使得其在 包含有机溶剂的显影剂减少，（2）使膜曝光，（3）通过包含有机溶剂的显影剂显影膜，以形成具有通过除去一部分膜而获得的空间部分的负图案和残留膜部分 （4）在负图案上形成用于反转图案的抗蚀剂膜，以便嵌入在负图案的空间部分中，并且（5）将负图案反转为正的图案 通过使用碱性湿蚀刻液除去负图案中的残留膜部分的图案。

    METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD
    18.
    发明申请
    METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD 审中-公开
    形成图案的方法和用于方法的丙烯酸或辐射敏感性树脂组合物

    公开(公告)号：US20150118621A1

    公开(公告)日：2015-04-30

    申请号：US14588579

    申请日：2015-01-02

    Applicant: FUJIFILM Corporation

    Inventor： Toshiaki FUKUHARA ,  Kaoru IWATO

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/20 ,  C08F220/18 ,  C08F220/28 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/0757 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40

    Abstract: Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.

    Abstract translation: 提供了形成图案的方法，包括（a）形成包含光化射线或辐射敏感性树脂组合物的膜，所述树脂组合物包含含有环状碳酸酯结构的重复单元（P1）的树脂（P）和任何 的下列通式（P2-1）的重复单元（P2）和当暴露于光化射线或辐射时产生酸的化合物（B），（b）将膜暴露于光化射线或辐射，和（c ）用包含有机溶剂的显影剂显影曝光的膜，从而获得负图案。

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