中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

116 records (took 0.027 seconds)

    ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    11.
    发明申请
    ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
    半导体衬底的蚀刻方法，以及生产半导体器件的方法

    公开(公告)号：US20150243527A1

    公开(公告)日：2015-08-27

    申请号：US14711070

    申请日：2015-05-13

    Applicant: FUJIFILM CORPORATION

    Inventor： Naotsugu MURO ,  Tetsuya KAMIMURA ,  Tadashi INABA ,  Atsushi MIZUTANI

    IPC: H01L21/3213 ,  C09K13/08

    CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

    Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

    Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。

    ETCHING LIQUID, ETCHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    12.
    发明申请
    ETCHING LIQUID, ETCHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    蚀刻液，使用其的蚀刻方法和制造半导体器件的方法

    公开(公告)号：US20150225645A1

    公开(公告)日：2015-08-13

    申请号：US14692106

    申请日：2015-04-21

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA ,  Kee Young PARK ,  Naotsugu MURO ,  Tadashi INABA

    IPC: C09K13/08 ,  H01L21/306

    CPC classification number: C09K13/08 ,  H01L21/30608 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

    Abstract: An etching liquid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing at least one metal selected from transition metals belonging to group 3 to group 11 of the periodic table thereby removing the first layer selectively, wherein the etching liquid contains a hexafluorosilicic acid compound, and an oxidizing agent of which concentration is 0.05% by mass or more and less than 10% by mass.

    Abstract translation: 一种用于处理具有包含氮化钛（TiN）的第一层和包含选自属于周期表第3族至第11族的过渡金属中的至少一种金属的第二层的衬底的蚀刻液体，由此选择性地除去第一层，其中 蚀刻液含有六氟硅酸化合物，其浓度为0.05质量％以上且小于10质量％的氧化剂。

    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID
    13.
    发明申请
    METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID 有权
    生产半导体基板产品和蚀刻液的方法

    公开(公告)号：US20130244443A1

    公开(公告)日：2013-09-19

    申请号：US13770282

    申请日：2013-02-19

    Applicant: FUJIFILM CORPORATION

    Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA ,  Akiko YOSHII ,  Tetsuya SHIMIZU

    IPC: C09K13/08 ,  H01L21/306

    CPC classification number: C09K13/08 ,  H01L21/28158 ,  H01L21/30604 ,  H01L21/31111

    Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

    Abstract translation: 一种制造半导体衬底产品的方法，其具有：提供含有水，氢氟酸化合物和有机溶剂的蚀刻液，并将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层， 含有杂质的硅层，从而选择性地蚀刻氧化硅层。

    CLEANING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
    14.
    发明申请
    CLEANING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 有权

    公开(公告)号：US20250019623A1

    公开(公告)日：2025-01-16

    申请号：US18892835

    申请日：2024-09-23

    Applicant: FUJIFILM Corporation

    Inventor： Tetsuya KAMIMURA ,  Shimpei YAMADA

    IPC: C11D7/26 ,  C11D7/32 ,  H01L21/02

    Abstract: An object of the present invention is to provide a cleaning composition that suppresses a surface roughness of a region including Mo and has excellent removability of Mo-based residues in a case of being used in a treatment of an Mo-containing substrate. The cleaning composition of an embodiment of the present invention is a cleaning composition used in a treatment of a molybdenum-containing substrate, the cleaning composition including an organic acid and organic amine compounds having at least one group selected from the group consisting of a primary amino group, a secondary amino group, and a tertiary amino group, in which the cleaning composition includes two or more kinds of the organic amine compounds.

    COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT
    15.
    发明申请
    COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT 有权

    公开(公告)号：US20240392214A1

    公开(公告)日：2024-11-28

    申请号：US18792828

    申请日：2024-08-02

    Applicant: FUJIFILM Corporation

    Inventor： Naotsugu MURO ,  Tadashi INABA ,  Tetsuya KAMIMURA

    IPC: C11D3/20 ,  C11D3/00 ,  C11D3/30 ,  C11D3/36 ,  C11D3/43 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

    Abstract: An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical properties of the tungsten-containing film can be suppressed; and to provide a manufacturing method of a semiconductor element.
    The composition of the present invention contains sorbic acid, citric acid, an amine-containing compound which is at least one selected from the group consisting of ammonia, an organic amine, a quaternary ammonium compound, and salts thereof, a specific compound which has at least one group selected from the group consisting of a phosphono group and a phosphoric acid group, and water, in which a pH at 25° C. is 4.0 to 9.0.

    COMPOSITION, KIT, AND METHOD FOR TREATING SUBSTRATE
    20.
    发明申请
    COMPOSITION, KIT, AND METHOD FOR TREATING SUBSTRATE 有权

    公开(公告)号：US20220119960A1

    公开(公告)日：2022-04-21

    申请号：US17565419

    申请日：2021-12-29

    Applicant: FUJIFILM Corporation

    Inventor： Atsushi MIZUTANI ,  Tetsuya KAMIMURA

    IPC: C23F1/16

    Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.
    The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

Patent Agency Ranking