公开(公告)号：US20230287304A1

公开(公告)日：2023-09-14

申请号：US18170195

申请日：2023-02-16

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Yasuo SUGISHIMA ,  Atsushi MIZUTANI

IPC: C11D3/34 ,  C11D3/30 ,  C11D3/00 ,  C11D1/34 ,  C11D1/04 ,  C11D1/14 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D3/3454 ,  C11D1/04 ,  C11D1/34 ,  C11D1/143 ,  C11D3/0026 ,  C11D3/30 ,  C11D3/0073 ,  C11D11/0047 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02244 ,  H01L21/32138

Abstract: An object of the present invention to provide a treatment liquid for a semiconductor device, where the treatment liquid has an excellent corrosion prevention property with respect to a metal-containing layer and excellent removability of an object to be removed, and also has excellent solubility in a post-treatment liquid. In addition, an object of the present invention is to provide a substrate treatment method using the treatment liquid.
The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which contains water, a removing agent, and a copolymer, and the copolymer has a first repeating unit having at least one group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, and a quaternary ammonium cation, and a second repeating unit different from the first repeating unit.

公开(公告)号：US20190071623A1

公开(公告)日：2019-03-07

申请号：US16180107

申请日：2018-11-05

Applicant: FUJIFILM Corporation

Inventor： Tetsuya KAMIMURA ,  Tomonori TAKAHASHI

IPC: C11D17/08 ,  C11D7/08 ,  C11D7/28 ,  C11D7/50 ,  C23G1/06 ,  C23F1/26 ,  G03F7/42 ,  H01L21/304 ,  H01L21/308

Abstract: A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10−10 to 1.0×10−4.

公开(公告)号：US20240425754A1

公开(公告)日：2024-12-26

申请号：US18808281

申请日：2024-08-19

Applicant: FUJIFILM Corporation

Inventor： Yuta SHIGENOI ,  Atsushi MIZUTANI ,  Tomonori TAKAHASHI

IPC: C09K13/02 ,  H01L21/3213

Abstract: An object of the present invention is to provide a composition for manufacturing a semiconductor, which is capable of selectively removing silicon in a case of being applied to an object to be treated containing silicon-germanium and silicon; a method for treating an object to be treated using the composition for manufacturing a semiconductor; and a method for manufacturing a semiconductor element using the composition for manufacturing a semiconductor.
The composition for manufacturing a semiconductor according to the present invention is a composition which includes a specific compound having two or more sulfur atoms and one or more heteroatoms other than a sulfur atom, an organic solvent, and water, and is alkaline.

公开(公告)号：US20210189235A1

公开(公告)日：2021-06-24

申请号：US17192391

申请日：2021-03-04

Applicant: FUJIFILM Corporation

Inventor： Nobuaki SUGIMURA ,  Tomonori TAKAHASHI ,  Hiroyuki SEKI

IPC: C09K13/06 ,  H01L21/3213

Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate.
The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3− and Cl−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

公开(公告)号：US20150252311A1

公开(公告)日：2015-09-10

申请号：US14717437

申请日：2015-05-20

Applicant: FUJIFILM Corporation

Inventor： Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI ,  Atsushi MIZUTANI ,  Hiroyuki SEKI ,  Hideo FUSHIMI ,  Tomoo KATO

IPC: C11D11/00 ,  H01L21/02 ,  C11D7/26 ,  H01L21/3213 ,  C11D7/34 ,  C11D7/32

CPC classification number: G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

Abstract: A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

Abstract translation: 提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物， 和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

公开(公告)号：US20140135246A1

公开(公告)日：2014-05-15

申请号：US14158454

申请日：2014-01-17

Applicant: FUJIFILM Corporation

Inventor： Atsushi MIZUTANI ,  Hideo FUSHIMI ,  Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI

IPC: H01L21/02

CPC classification number: H01L21/02076 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02071

Abstract: A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

Abstract translation: 提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的 羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物， （成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵 化合物，该组合物的pH为5〜10。