公开(公告)号：US11279850B2

公开(公告)日：2022-03-22

申请号：US16299935

申请日：2019-03-12

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.

公开(公告)号：US20210087431A1

公开(公告)日：2021-03-25

申请号：US17024766

申请日：2020-09-18

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Liqing Wen ,  Bin Hu ,  Tawei Lin

IPC: C09G1/02 ,  C23F3/00

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a first low-k removal rate inhibitor; a second low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor. This disclosure also relates to a method of polishing a substrate that comprises cobalt using the polishing compositions described herein.

公开(公告)号：US20240309241A1

公开(公告)日：2024-09-19

申请号：US18670879

申请日：2024-05-22

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Yannan Liang ,  Hyosang Lee ,  Liqing Wen ,  Yibin Zhang ,  Abhudaya Mishra

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K13/00 ,  H01L21/3212

Abstract: This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one first amine compound, the at least one first amine compound including an alkylamine having a 6-24 carbon alkyl chain; (4) at least one second amine compound containing at least two nitrogen atoms, the second amine compound being different from the first amine compound; and (5) an aqueous solvent.

公开(公告)号：US20240174892A1

公开(公告)日：2024-05-30

申请号：US18515857

申请日：2023-11-21

Applicant: Fujifilm Electronic Materials U.S.A. Inc.

Inventor： Ting-Kai Huang ,  Yannan Liang ,  Bin Hu ,  Chun-Fu Chen ,  Ying-Shen Chuang ,  Tzu-Wei Chiu ,  Sung TsaiLin ,  Hanyu Fan ,  Hsin-Hsien Lu

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.

公开(公告)号：US20240034958A1

公开(公告)日：2024-02-01

申请号：US18356486

申请日：2023-07-21

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： Yannan Liang ,  Bin Hu ,  Shu-Wei Chang

IPC: C11D11/00 ,  C11D1/02 ,  C11D3/00 ,  C11D3/33 ,  C11D3/30 ,  C11D3/28 ,  C11D3/39 ,  H01L21/306

CPC classification number: C11D11/0047 ,  C11D1/02 ,  C11D3/0047 ,  C11D3/33 ,  C11D3/30 ,  C11D3/28 ,  C11D3/3942 ,  H01L21/30625

Abstract: A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.

公开(公告)号：US11851585B2

公开(公告)日：2023-12-26

申请号：US17880758

申请日：2022-08-04

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC classification number: C09G1/02 ,  C09K15/30 ,  H01L21/3212

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20230193168A1

公开(公告)日：2023-06-22

申请号：US18081738

申请日：2022-12-15

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Bin Hu ,  Binh Duong ,  Carl Ballesteros ,  Yannan Liang ,  Hyosang Lee

IPC: C11D11/00 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D7/32 ,  C11D7/5004

Abstract: This disclosure relates to a method that includes applying a polishing composition to a surface of a substrate; bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate to create a polished substrate; treating the polished substrate with a rinse solvent; flowing a vapor over a meniscus formed at an interface between air and the rinse solvent on the polished substrate. The vapor includes a first component containing a water miscible organic solvent, a second component containing a cleaning agent, and a third component containing an inert gas.

公开(公告)号：US20230052829A1

公开(公告)日：2023-02-16

申请号：US17875458

申请日：2022-07-28

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Bin Hu ,  Yannan Liang ,  Hong Piao

IPC: C09G1/04 ,  H01L21/321

Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.

公开(公告)号：US20220306899A1

公开(公告)日：2022-09-29

申请号：US17699655

申请日：2022-03-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Qingmin Cheng ,  Bin Hu ,  Kristopher D. Kelly ,  Yannan Liang ,  Hyosang Lee ,  Eric Turner ,  Abhudaya Mishra

IPC: C09G1/02 ,  H01L21/321

Abstract: This disclosure relates to polishing compositions that include (1) at least one abrasive; (2) at least one organic acid or a salt thereof; (3) at least one amine compound; (4) at least one nitride removal rate reducing agent; and (5) an aqueous solvent.

公开(公告)号：US20220162478A1

公开(公告)日：2022-05-26

申请号：US17669519

申请日：2022-02-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/306 ,  C23F1/00 ,  C23F1/44

Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.