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    Polishing Composition
    11.
    发明申请
    Polishing Composition 审中-公开

    公开(公告)号：US20200062997A1

    公开(公告)日：2020-02-27

    申请号：US16495442

    申请日：2018-03-09

    Applicant: FUJIMI INCORPORATED

    Inventor： Shogo Onishi ,  Yukari Uehara ,  Kenichi Komoto

    IPC: C09G1/02 ,  H01L21/321

    Abstract: The present invention provides a polishing composition having a high polishing speed and a low etching speed and capable of achieving sufficient flattening.The present invention is a polishing composition containing abrasive grains, an oxidizing agent, an acid, an anticorrosive containing a compound represented by the following formula (1) or a salt thereof, and a dispersing medium. (In the formula (1), R2 is a linear or branched alkyl group having 6 or more and 30 or less carbon atoms or a linear or branched alkenyl group having 6 or more and 30 or less carbon atoms, R2 is a single bond or an alkylene group having 1 or more and 4 or less carbon atoms, and R3 is a hydrogen atom or a linear or branched alkyl group having 1 or more and 10 or less carbon atoms.)

    Polishing composition
    12.
    发明授权
    Polishing composition 有权

    公开(公告)号：US10138396B2

    公开(公告)日：2018-11-27

    申请号：US15761050

    申请日：2016-09-28

    Applicant: FUJIMI INCORPORATED

    Inventor： Yukinobu Yoshizaki ,  Shogo Onishi

    IPC: C09G1/02 ,  H01L21/321

    Abstract: The purpose of the present invention is to provide a polishing composition which can polish an object to be polished containing oxygen atoms and silicon atoms at high polishing speed, and can reduce generation of scratches on a surface of the object to be polished.A polishing composition used for polishing an object to be polished containing oxygen atoms and silicon atoms, the polishing composition including: abrasive grains A having an average primary particle size of 3 nm or more and 8 nm or less; abrasive grains B having an average primary particle size of more than 8 nm; and a dispersing medium, wherein a content of the abrasive grains B in the polishing composition is larger than a content of the abrasive grains A in the polishing composition, average silanol group density of the abrasive grains A and the abrasive grains B is 2.0 nm−2 or less, and an aspect ratio of the abrasive grains B is more than 1.3 and 2.0 or less.

    MOLYBDENUM CHEMICAL MECHANICAL POLISHING COMPOUNDS AND METHODS OF USE THEREOF
    13.
    发明申请
    MOLYBDENUM CHEMICAL MECHANICAL POLISHING COMPOUNDS AND METHODS OF USE THEREOF 有权

    公开(公告)号：US20250084280A1

    公开(公告)日：2025-03-13

    申请号：US18818832

    申请日：2024-08-29

    Applicant: FUJIMI INCORPORATED

    Inventor： Shogo Onishi ,  Glenn Whitener

    IPC: C09G1/02 ,  C09K13/00

    Abstract: The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.
    The first molybdenum static etching rate suppressor is a phosphate-containing polyethylene surfactant or a sulfate-containing polyethylene surfactant, and the second molybdenum static etching rate suppressor is a basic amino acid, and this combination provides advantageous properties such as high molybdenum removal rate while also exhibiting a low molybdenum static etching rate, thus providing compositions well suited for polishing a molybdenum surface.

    Polishing composition
    16.
    发明授权
    Polishing composition 有权

    公开(公告)号：US10781342B2

    公开(公告)日：2020-09-22

    申请号：US15562692

    申请日：2016-03-11

    Applicant: FUJIMI INCORPORATED

    Inventor： Shogo Onishi ,  Takeki Sato ,  Yukinobu Yoshizaki ,  Koichi Sakabe

    IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/3105

    Abstract: An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film.Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

    Polishing composition
    17.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US09505951B2

    公开(公告)日：2016-11-29

    申请号：US14440216

    申请日：2013-09-30

    Applicant: FUJIMI INCORPORATED

    Inventor： Takahiro Umeda ,  Shogo Onishi ,  Takeshi Yoshikawa ,  Yoshihiro Kachi

    IPC: C09K13/00 ,  C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  H01L21/3105

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

    Abstract: [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

    Abstract translation: [解决方案]提供一种抛光组合物，其用于抛光具有阻挡层，金属布线层和绝缘膜的抛光对象的抛光组合物，所述抛光组合物包括磨粒，氧化剂，金属腐蚀抑制剂，pH 调整剂和水，其中当颗粒的一个颗粒的累积粒子数达到总颗粒重量的90％至直径的90％时，其中磨粒的纵横比为1.22或更小，颗粒直径D90的比D90 / D10 当通过激光衍射散射法确定的磨粒的粒度分布中，当微细颗粒侧的累积粒子重量达到整个颗粒的总颗粒重量的10％时颗粒的D10为1.5以上。

    Polishing composition
    20.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US09486892B2

    公开(公告)日：2016-11-08

    申请号：US14440208

    申请日：2013-10-29

    Applicant: FUJIMI INCORPORATED

    Inventor： Shogo Onishi ,  Yasuto Ishida ,  Tatsuhiko Hirano

    IPC: B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K3/14

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/3212

    Abstract: [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate.[Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

    Abstract translation: [解决方案]提供一种抛光组合物，其用于抛光具有金属布线层的抛光对象，该金属布线层含有金属腐蚀抑制剂，络合剂，表面活性剂和水，并且其中抛光后抛光对象表面的固体表面能 使用研磨用组合物的研磨对象为30mN / m以下，表面活性剂优选为阴离子表面活性剂。

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