公开(公告)号：US06930015B2

公开(公告)日：2005-08-16

申请号：US10319938

申请日：2002-12-16

申请人： Er-Xuan Ping ,  Randhir Thakur

发明人： Er-Xuan Ping ,  Randhir Thakur

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L21/84

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

公开(公告)号：US06927169B2

公开(公告)日：2005-08-09

申请号：US10325353

申请日：2002-12-19

申请人： Dan Maydan ,  Randhir Thakur

发明人： Dan Maydan ,  Randhir Thakur

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/84 ,  H01L21/311

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/84

摘要： A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.

摘要翻译： 用于以对下层材料例如硅具有平坦化作用的方式形成氧化物的方法和装置。 特别地，在下层材料上生长具有不均匀厚度分布的氧化物。 根据下层材料的不均匀轮廓选择氧化物的不均匀厚度分布。 与预氧化表面相比，随后将氧化物除去在下面的材料的平坦化表面之后。

公开(公告)号：US06511892B1

公开(公告)日：2003-01-28

申请号：US09138879

申请日：1998-08-24

申请人： Er-Xuan Ping ,  Randhir Thakur

发明人： Er-Xuan Ping ,  Randhir Thakur

IPC分类号： H01L2120

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

公开(公告)号：US06451661B1

公开(公告)日：2002-09-17

申请号：US09415213

申请日：1999-10-12

申请人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

发明人： Scott J. DeBoer ,  Husam Al-Shareef ,  Randhir Thakur

IPC分类号： H01L2120

CPC分类号： H01L27/10852 ,  H01L21/31604 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/55 ,  H01L28/91

摘要： A capacitor having a double sided electrode for enhanced capacitance. In one embodiment, the double sided electrode capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The double sided electrode is preferably formed of a conductive metal, provided that an oxide of the metal is conductive. The double sided electrode capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.

摘要翻译： 具有用于增强电容的双面电极的电容器。 在一个实施例中，双面电极电容器是用于动态随机存取存储器电路中的层叠容器电容器。 双面电极优选由导电金属形成，只要金属的氧化物是导电的。 双面电极电容器提供具有高存储电容的电容器，其在不增加电池尺寸的情况下为电池提供增加的效率。

公开(公告)号：US06432841B1

公开(公告)日：2002-08-13

申请号：US09696357

申请日：2000-10-25

申请人： Li Li ,  Randhir Thakur ,  Richard C. Hawthorne

发明人： Li Li ,  Randhir Thakur ,  Richard C. Hawthorne

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/28167 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/518

摘要： A method of forming a selected dielectric that includes the steps of contacting a suitable substrate having a silicon-containing layer with a gas mixture containing atomic nitrogen, nitric oxide and their reactive constituents at a pressure and temperature sufficient for effective dielectric layer formation for the selected dielectric layer.

摘要翻译： 一种形成所选择的电介质的方法，其包括以下步骤：使具有含硅层的合适衬底与含有原子氮，一氧化氮及其反应性组分的气体混合物在足以用于所选择的有效介电层形成的压力和温度下接触 电介质层。

公开(公告)号：US06399459B2

公开(公告)日：2002-06-04

申请号：US09892594

申请日：2001-06-27

申请人： Husam N. Al-Shareef ,  Scott DeBoer ,  Randhir Thakur

发明人： Husam N. Al-Shareef ,  Scott DeBoer ,  Randhir Thakur

IPC分类号： H01L2120

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L28/55

摘要： A high surface area capacitor comprising a double metal layer (an electrode metal and barrier material) deposited on hemispherical grain (HSG) silicon, wherein a high dielectric constant (HDC) material is deposited over the double metal layer. The high surface area capacitor is complete with an upper cell plate electrode deposited over the HDC material. The double metal layer preferably comprises one noble metal, such as platinum or palladium, for the electrode metal and an oxidizable metal, such as ruthenium, iridium, or molybdenum, for the barrier material. The noble metal, such as platinum metal, alone would normally allow oxygen to diffuse into and oxidize any adhesion layer (making the adhesion layer less conductive) and/or undesirably oxidize any silicon-containing material during the deposition of the HDC material. Thus, the barrier metal is used to form a conducting oxide layer or a conducting layer which stops the oxygen diffusion. The HSG polysilicon provides an enhanced surface roughness that boosts cell capacitance. The HDC material, preferably BST or the like, is also used to boost cell capacitance.

摘要翻译： 包括沉积在半球形晶粒（HSG）硅上的双金属层（电极金属和阻挡材料）的高表面积电容器，其中在双金属层上沉积高介电常数（HDC）材料。 高表面积电容器完成了沉积在HDC材料上的上电池板电极。 双金属层优选包含用于电极金属的一种贵金属，例如铂或钯，以及用于阻挡材料的可氧化金属，例如钌，铱或钼。 单独的贵金属，例如铂金属，通常会允许氧气在HDC材料的沉积过程中扩散并氧化任何粘附层（使粘合层导电性差）和/或不期望地氧化任何含硅材料。 因此，阻挡金属用于形成阻止氧扩散的导电氧化物层或导电层。 HSG多晶硅提供增强的表面粗糙度，提高电池电容。 HDC材料，优选BST等，也用于提高电池电容。

公开(公告)号：US06265282B1

公开(公告)日：2001-07-24

申请号：US09135474

申请日：1998-08-17

申请人： Richard Lane ,  Randhir Thakur

发明人： Richard Lane ,  Randhir Thakur

IPC分类号： H01L2176

CPC分类号： H01L21/76224 ,  Y10T428/31623

摘要： A novel shallow-trench isolation (STI) structure and process for forming it is described. More particularly, a recess is formed in a semiconductor substrate. An oxide layer is formed in the recess using thermal oxidation or high-pressure oxidation. If the oxide layer is formed by high-pressure oxidation, then a nitrogen containing gas may be flowed into a high-pressure oxidation chamber to add nitrogen to the oxide layer. The recess may then be filled with a dielectric layer by a deposition process. Alternately, the dielectric layer may be formed using high-pressure oxidation.

公开(公告)号：US06217784B1

公开(公告)日：2001-04-17

申请号：US09652426

申请日：2000-08-31

申请人： Randhir Thakur ,  James Pan

发明人： Randhir Thakur ,  James Pan

IPC分类号： B44C122

CPC分类号： H01L28/40 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116

摘要： A process for etching oxides having differing densities which is not only highly selective, but which also produces uniform etches is provided and includes the steps of providing an oxide layer on a surface of a substrate, exposing the oxide layer to a liquid comprising a halide-containing species, and exposing the oxide layer to a gas phase comprising a halide-containing species. The process desirably is used to selectively etch a substrate surface in which the surface of the substrate includes on a first portion thereof a first silicon oxide and on a second portion thereof a second silicon oxide, with the first silicon oxide being relatively more dense than the second silicon oxide, such as, for example, a process which forms a capacitor storage cell on a semiconductor substrate.

公开(公告)号：US08536492B2

公开(公告)日：2013-09-17

申请号：US11187188

申请日：2005-07-22

申请人： Sundar Ramamurthy ,  Andreas G. Hegedus ,  Randhir Thakur

发明人： Sundar Ramamurthy ,  Andreas G. Hegedus ,  Randhir Thakur

IPC分类号： F27B5/14

CPC分类号： H01L21/67103

摘要： A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

摘要翻译： 一种用于快速热退火的方法和装置，包括固定到室的盖上的多个灯，其提供至少一个波长的光，延伸到腔室中的激光源，位于腔室的基座内的基底支撑件， 固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。 一种用于快速热退火的方法和装置，包括多个灯，其包括灯的区域控制和固定到所述室的盖的冷却气体分配系统，具有延伸穿过所述室的基部的磁悬浮的加热衬底支撑件， 固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。

公开(公告)号：US20130013847A1

公开(公告)日：2013-01-10

申请号：US13616986

申请日：2012-09-14

申请人： Roy E. Scheuerlein ,  Randhir Thakur ,  Christopher Moore

发明人： Roy E. Scheuerlein ,  Randhir Thakur ,  Christopher Moore

IPC分类号： G06F12/02

CPC分类号： G06F12/0638 ,  G06F11/1415 ,  G06F12/1425 ,  G06F2212/2142

摘要： Methods and apparatus for a solid state non-volatile storage sub-system of a computer is provided. The storage sub-system may include a write-many storage sub-system memory device including write-many memory cells, a write-once storage sub-system memory device including write-once memory cells, and a page-based interface that is adapted to read and write the write-once and write-many storage sub-system memory devices. Numerous other aspects are provided.

摘要翻译： 提供了一种计算机固态非易失性存储子系统的方法和装置。 存储子系统可以包括包括多写存储器单元的多写存储子系统存储器设备，包括一次写入存储器单元的一次写入存储子系统存储器件以及适配的基于页面的接口 读写多个存储子系统存储器件。 提供了许多其他方面。