摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, determined by the following Formulae (1) to (3), is not greater than 20: [ Math . 1 ] R i ( Fe ) = I i ( Fe ) × 100 I i ( Fe ) + I i ( Zr ) + I i ( X ) ( 1 ) R i ( Zr + X ) = { I i ( Zr ) + I i ( X ) } × 100 I i ( Fe ) + I i ( Zr ) + I i ( X ) ( 2 ) COV ( Fe , Zr + X ) = 1 n ∑ i = 1 n [ { R i ( Fe ) - R av ( Fe ) } × { R i ( Zr + X ) - R av ( Zr + X ) } ] ( 3 ) (in the formula, Ii(Fe), Ii(Zr), and Ii(X) respectively represent the ratios of the X-ray intensities of iron, zirconium, and the rare-earth element measured at a measurement point i (where i=1 to n) to the 100% intensities of the respective elements as measured by subjecting the composite oxide to a ray analysis through EPMA (WDX: wavelength dispersive X-ray spectrometry), where Rav(Fe) and Rav(Zr+X) represent the mean values of Ri(Fe) and Ri(Zr+X), respectively, at all measurement points n).
摘要:
A pressure detection unit includes a first substrate and a second substrate which are disposed in opposition to each other and subject to load from the outside, a pressure detection portion having a pair of electrodes provided between the first substrate and the second substrate and in the first substrate and the second substrate, and electrically conductive pressure-sensitive ink disposed between the pair of electrodes and having electrical characteristics which varies according to the load, and a load transmission member disposed between the first substrate and the pressure detection portion and/or between the second substrate and the pressure detection portion, the load transmission member transmitting the load to the pressure detection portion in a concentrated manner.
摘要:
A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121), a first n-type semiconductor layer (122) having a nanotube array structure, and a second n-type semiconductor layer (123); a counter electrode (130) connected to the conductor (121); an electrolyte (140) in contact with the second n-type semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). Relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer (123), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer (122), (II) a Fermi level of the first n-type semiconductor layer (122) is higher than a Fermi level of the second n-type semiconductor layer (123), and (III) a Fermi level of the conductor (121) is higher than the Fermi level of the first n-type semiconductor layer (122).
摘要:
A hydrogen generation device (100) of the present invention includes: a transparent substrate (1); a photocatalytic electrode (4) formed of a transparent conductive layer (2) and a photocatalytic layer (3) disposed on the transparent substrate (1); a counter electrode (8) connected electrically to the transparent conductive layer (2); a water-containing electrolyte solution layer provided between the photocatalytic electrode (3) and the counter electrode (8); a separator (6) that separates the electrolyte solution layer into a first electrolyte solution layer (5) in contact with the photocatalytic electrode (4) and a second electrolyte solution layer (7) in contact with the counter electrode (8); a first gas outlet (14) for discharging a gas generated in the first electrolyte solution layer (5); and a second gas outlet (15) for discharging a gas generated in the second electrolyte solution layer (7). The photocatalytic electrode (4) and the counter electrode (8) are arranged so that a surface of the photocatalytic layer (3) and a surface of the counter electrode (8) face each other. The separator (6) allows an electrolyte in the electrolyte solution layer to pass therethrough and prevents hydrogen gas and oxygen gas in the electrolyte solution layer from passing therethrough.
摘要:
A photoelectrode (100) of the present invention includes a conductive layer (12) and a photocatalytic layer (13) provided on the conductive layer (12). The conductive layer (12) is made of a metal nitride. The photocatalytic layer (13) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer (13) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).When the photocatalytic layer (13) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer (12) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer (13).
摘要:
An energy system includes an solar hydrogen producing unit (101) that produces hydrogen through decomposition of water by a photocatalytic effect, a fuel cell (103) that generates electricity by a reaction between the hydrogen produced by the solar hydrogen producing unit (101) and an oxidizing gas and discharges water as a reaction product, and a water distribution mechanism (104) that returns the water serving as the reaction product discharged from the fuel cell (103) to the solar hydrogen producing unit (101). With the configuration, an energy system that suppresses an amount of external water supply to a low level to achieve good water balance can be provided.
摘要:
A conductive endless belt is composed of elastomer polyester with a crystalline melting point at 210° C. or more, or mainly composed of the elastomer polyester, and a thermoplastic polyester-based resin at 49 wt % or less, added a polymer ion conductive agent and a carbon black. The conductive endless belt. satisfies elastic modulus, creep resistance, bending durability, etc. and has decreased volume resistance variation and environment dependency while having superior durability, glossiness and setting performance that satisfying desired performance, without causing problems such as offset image.
摘要:
An electrophotographic photoreceptor comprising at least a photosensitive layer on an electroconductive substrate, a surface layer of the electrophotographic photoreceptor including a fluorinated alkyl group-containing copolymer having repeating units represented by the following formulae A and B, and fluorine-based resin particles: wherein in Formulae A and B, l, m and n each independently represent a integer number of 1 or more; p, q, r and s each independently represent 0 or an integer of 1 or more; t represents an integer of from 1 to 7; R1, R2, R3, and R4 each independently represent a hydrogen atom or an alkyl group; X represents an alkylene chain, a halogen-substituted alkylene chain, —S—, —O—, —NH— or a single bond; Y represents an alkylene chain, a halogen-substituted alkylene chain, —(CzH2z-1(OH))— or a single bond; and z represents an integer of 1 or more.
摘要:
A method of manufacturing a narrow frame touch input sheet having very good anticorrosion properties and suitable for a narrow frame capacitance type touch sensor having a double-layer transparent conductive film pattern. The method uses an electrical conductivity sheet obtained by sequentially forming transparent and light blocking conductive films, and first resist layers, on both sides of a transparent base sheet, exposing and developing the resist layers on both sides simultaneously, etching the transparent and light blocking films simultaneously, removing the resist layers, laminating second resist layers with anticorrosion agent on the revealed light blocking films, etching the light blocking films in center windows and terminal portions to reveal the transparent films, and side etching revealed end faces of the light blocking films at center window and terminal portion boundaries to create visor structured second resist layers that are heat softened as an anticorrosion layer on the revealed faces.
摘要:
The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2
摘要翻译:本发明的光学半导体是含有In,Ga,Zn,O和N的光学半导体,其通式为:In 2 x Ga 2(1)中的一部分氧(O)被氮(N)取代的组成 -x)O 3(ZnO)y,其中x和y满足0.2