公开(公告)号：US11482449B2

公开(公告)日：2022-10-25

申请号：US16983380

申请日：2020-08-03

Applicant: General Electric Company

Inventor： Cheng-Po Chen ,  Reza Ghandi ,  David Richard Esler ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Liang Yin

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L23/00 ,  H01L23/532

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

公开(公告)号：US10260500B2

公开(公告)日：2019-04-16

申请号：US15595685

申请日：2017-05-15

Applicant: General Electric Company

Inventor： Xuele Qi ,  Cheng-Po Chen ,  Grant Lynn Hartman ,  Yizhen Lin ,  David Mulford Shaddock

IPC: F04B51/00 ,  E21B43/12 ,  E21B47/06 ,  E21B47/022 ,  F04B47/02

Abstract: A downhole dynamometer for a rod pumping unit is provided. The downhole dynamometer includes a shell within which a plurality of sensors, a non-transitory memory, and a dynamometer controller are located. The shell is configured to be coupled to a sucker rod string of the rod pumping unit and disposed in a well opposite a wellhead of the well. The plurality of sensors is configured to measure downhole accelerations of the sucker rod string and to measure a downhole load on the sucker rod string. The dynamometer controller is coupled to the plurality of sensors and the non-transitory memory. The dynamometer controller is configured to periodically collect measurements from the plurality of sensors and store the measurements in the non-transitory memory.

公开(公告)号：US08765524B2

公开(公告)日：2014-07-01

申请号：US13967886

申请日：2013-08-15

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC: H01L21/00

CPC classification number: H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

Abstract translation: 提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。 TVS组件包括台面结构中的半导体管芯，其包括具有第一极性的导电率的第一宽带隙半导体的第一层，具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触，其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一，第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层，具有第二极性的导电性的层被轻掺杂。

公开(公告)号：US12125745B2

公开(公告)日：2024-10-22

申请号：US17949325

申请日：2022-09-21

Applicant: General Electric Company

Inventor： Cheng-Po Chen ,  Reza Ghandi ,  David Richard Esler ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Liang Yin

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/00 ,  H01L23/31 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/02172 ,  H01L23/3192 ,  H01L23/53252 ,  H01L24/05 ,  H01L2224/05599 ,  H01L2924/1904

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

公开(公告)号：US20210102870A1

公开(公告)日：2021-04-08

申请号：US16696025

申请日：2019-11-26

Applicant: General Electric Company

Inventor： Deepak Trivedi ,  Grover Andrew Bennett, JR. ,  Sandeep Kumar ,  Manoj Kumar Koyithitta Meethal ,  David Mulford Shaddock ,  Andrew Crispin Graham ,  Stephen Paul Leclerc, JR.

IPC: G01M15/14

Abstract: An insertion apparatus for use with a rotary machine includes a body extending from an insertion end to a steering end and sized to fit within an annular cavity. The body has a first stiffness and curves along a circumference of the annular cavity as the insertion end travels through the annular cavity. The insertion apparatus also includes a stiffener coupled to the body and extending from the steering end to the insertion end. The stiffener has a second stiffness greater than the first stiffness. The insertion apparatus further includes at least one maintenance device coupled to the insertion end of the insertion apparatus and a displacement mechanism configured to adjust a position of the at least one maintenance device relative to the body.

公开(公告)号：US20150348952A1

公开(公告)日：2015-12-03

申请号：US14287237

申请日：2014-05-27

Applicant: General Electric Company

Inventor： Gamal Refai-Ahmed ,  David Mulford Shaddock ,  Arun Virupaksha Gowda ,  John Anthony Vogel ,  Christian Giovanniello

IPC: H01L25/16 ,  H01L33/62 ,  H01L23/538 ,  H01L33/54 ,  H01S5/022 ,  H01S5/024 ,  H01L25/00 ,  H01L33/64

CPC classification number: H01L23/5386 ,  H01L23/49811 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/02256 ,  H05K3/32 ,  H05K2201/0311 ,  H05K2201/10674 ,  H01L2924/00

Abstract: An electronic packaging assembly having a semiconductor integrated circuit and a plurality of interconnect components is provided. The plurality of interconnect components is operatively coupled to the semiconductor integrated circuit. Further, one or more interconnect components include one or more support elements having a first surface and a second surface, and one or more spring elements having a first end and a second end, and wherein first ends of the one or more spring elements are coupled to the first surface or the second surface of a respective support element.

Abstract translation: 提供一种具有半导体集成电路和多个互连部件的电子封装组件。 多个互连部件可操作地耦合到半导体集成电路。 此外，一个或多个互连部件包括具有第一表面和第二表面的一个或多个支撑元件，以及具有第一端和第二端的一个或多个弹簧元件，并且其中一个或多个弹簧元件的第一端连接 到相应的支撑元件的第一表面或第二表面。

公开(公告)号：US20130328064A1

公开(公告)日：2013-12-12

申请号：US13967886

申请日：2013-08-15

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Avinash Srikrishnan Kashyap ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Peter Micah Sandvik ,  Stephen Daley Arthur ,  Vinayak Tilak

IPC: H01L21/56 ,  H01L29/16

CPC classification number: H01L21/56 ,  H01L23/3185 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.

Abstract translation: 提供了形成碳化硅瞬态电压抑制器（TVS）组件的方法和用于瞬态电压抑制器（TVS）组件的系统。 TVS组件包括台面结构中的半导体管芯，其包括具有第一极性的导电率的第一宽带隙半导体的第一层，具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触，其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一，第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层，具有第二极性的导电性的层被轻掺杂。