公开(公告)号：US20150311701A1

公开(公告)日：2015-10-29

申请号：US14261195

申请日：2014-04-24

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Peter Micah Sandvik ,  Joe Walter Kirstein ,  Alexander Viktorovich Bolotnikov

IPC: H02H9/04 ,  H01L21/768 ,  H01L25/065 ,  H01L29/16 ,  H01L27/02 ,  H01L29/66 ,  H01L21/02 ,  H01L25/00

CPC classification number: H02H9/04 ,  G01R1/0458 ,  G01R31/2642 ,  G01R31/2874 ,  G01R31/2875 ,  G01R31/2891 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0255 ,  H01L29/1608 ,  H01L29/423 ,  H01L29/42304 ,  H01L29/70 ,  H01L29/732 ,  H01L2225/06541 ,  H01L2924/0002 ,  H02H9/044 ,  H01L2924/00

Abstract: A transient voltage suppression (TVS) device and a method of forming the device are provided. The transient voltage suppression (TVS) device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer. The TVS device also includes a conductive path electrically coupled between the second layer and an electrical connection to a circuit external to the TVS device, the conductive path configured to permit controlling a turning on of the TVS device at less than a breakdown voltage of the TVS device.

Abstract translation: 提供瞬态电压抑制（TVS）装置和形成装置的方法。 瞬态电压抑制（TVS）器件包括由第一导电类型材料形成的第一层宽带隙半导体材料，第二层宽带隙半导体材料，由第二导电类型材料形成，在第一导电类型材料的至少一部分上形成 层，以及在第二层的至少一部分上由第一导电类型材料形成的第三层宽带隙半导体材料。 TVS设备还包括电耦合在第二层和与TVS设备外部的电路的电连接的导电路径，导电路径被配置为允许以小于TVS的击穿电压来控制TVS设备的接通 设备。

公开(公告)号：US20180190791A1

公开(公告)日：2018-07-05

申请号：US15398489

申请日：2017-01-04

Applicant: General Electric Company

Inventor： Victor Mario Torres ,  Reza Ghandi ,  David Alan Lilienfeld ,  Avinash Srikrishnan Kashyap ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/66 ,  H01L29/36 ,  H01L21/265 ,  H01L21/306 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/861

CPC classification number: H01L29/66537 ,  H01L21/26586 ,  H01L21/30604 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/36 ,  H01L29/7424 ,  H01L29/7811 ,  H01L29/8618

Abstract: The present disclosure relates to a symmetrical, punch-through transient voltage suppression (TVS) device includes a mesa structure disposed on a semiconductor substrate. The mesa structure includes a first semiconductor layer of a first conductivity-type, a second semiconductor layer of a second conductivity-type disposed on the first semiconductor layer, and a third semiconductor layer of the first conductive-type disposed on the second semiconductor layer. The mesa structure also includes beveled sidewalls forming mesa angles with respect to the semiconductor substrate and edge implants disposed at lateral edges of the second semiconductor layer. The edge implants including dopants of the second conductive-type are configured to cause punch-through to occur in a bulk region and not in the lateral edges of the second semiconductor layer.

公开(公告)号：US09806157B2

公开(公告)日：2017-10-31

申请号：US14505975

申请日：2014-10-03

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Avinash Srikrishnan Kashyap

IPC: H01L29/16 ,  H01L29/861 ,  H01L29/66 ,  H01L27/02 ,  H01L27/08

CPC classification number: H01L29/1608 ,  H01L27/0255 ,  H01L27/0814 ,  H01L29/6606 ,  H01L29/861

Abstract: A transient voltage suppression (TVS) device and a method of forming the device are provided. The TVS device includes a first layer of wide band-gap semiconductor material formed of a first conductivity type material, a second layer of wide band-gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer, the second layer including a first concentration of dopant. The TVS device further including a third layer of wide band-gap semiconductor material formed of the second conductivity type material over at least a portion of the second layer, the third layer including a second concentration of dopant, the second concentration of dopant being different than the first concentration of dopant. The TVS device further including a fourth layer of wide band-gap semiconductor material formed of the first conductivity type material over at least a portion of the third layer.

公开(公告)号：US20170187181A1

公开(公告)日：2017-06-29

申请号：US14982735

申请日：2015-12-29

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Christian M. Giovanniello ,  Christopher Fred Keimel

IPC: H02H9/00 ,  H02H9/04

Abstract: A surge suppression device includes a micro electromechanical system (MEMS) switch electrically connected to a current path. Additionally, the surge suppression device includes a transient voltage suppression (TVS) device electrically connected in series to the MEMS switch. The surge suppression device is configured to protect electronic components from voltage surges or current surges.

公开(公告)号：US20150002976A1

公开(公告)日：2015-01-01

申请号：US14486138

申请日：2014-09-15

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Avinash Srikrishnan Kashyap ,  Emad Andarawis Andarawis ,  David Mulford Shaddock

IPC: H02H1/04 ,  H02H3/20

CPC classification number: H02H1/04 ,  H01L21/50 ,  H01L21/8213 ,  H01L21/8252 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/96 ,  H01L27/0255 ,  H01L27/0605 ,  H01L27/0814 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/45 ,  H01L29/861 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13109 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2924/10272 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/15192 ,  H01L2924/3025 ,  H02H3/20 ,  H01L2924/0105 ,  H01L2924/00

Abstract: A high temperature electronic system includes an electronics unit configured for exposure to an environment having a temperature greater than approximately 150.0° C. The remote electronics unit includes a transient voltage suppressor (TVS) assembly coupled in operative relationship with at least some electronic components of the electronics unit. The TVS assembly includes at least one TVS device comprising at least one of a punch-through wide band-gap semiconductor TVS die and an avalanche breakdown wide band-gap semiconductor TVS die encapsulated in a flip-chip package at least partially surrounding the die, and coupled to first and second electrodes exposed to a single side of the encapsulation.

Abstract translation: 高温电子系统包括被配置为暴露于温度大于约150.0℃的环境的电子单元。远程电子单元包括瞬态电压抑制器（TVS）组件，其与至少一些电子部件的操作关系耦合 电子单元。 TVS组件包括至少一个TVS装置，其包括穿透宽带隙半导体TVS管芯和封装在至少部分围绕管芯的倒装芯片封装的雪崩击穿宽带隙半导体TVS管芯中的至少一个， 并且耦合到暴露于封装的单侧的第一和第二电极。

公开(公告)号：US20150001551A1

公开(公告)日：2015-01-01

申请号：US13931363

申请日：2013-06-28

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Peter Micah Sandvik ,  Rui Zhou

IPC: H01L27/02 ,  H01L21/8232 ,  H01L29/267 ,  H01L27/06

CPC classification number: H01L27/0248 ,  H01L21/8213 ,  H01L21/8232 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0617 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7786

Abstract: A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

Abstract translation: 提出了一种单片集成半导体组件。 半导体组件包括包含碳化硅（SiC）的衬底，并且在衬底上制造氮化镓（GaN）半导体器件。 半导体组件还包括在衬底中或衬底上制造的至少一个瞬态电压抑制器（TVS）结构，其中TVS结构与GaN半导体器件电接触。 当跨越GaN半导体器件的施加电压大于阈值电压时，TVS结构被配置为以穿通模式，雪崩模式或其组合工作。 还提出了制造单片集成半导体组件的方法。

公开(公告)号：US10511163B2

公开(公告)日：2019-12-17

申请号：US14982735

申请日：2015-12-29

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Christian M. Giovanniello ,  Christopher Fred Keimel

IPC: H01C7/12 ,  H02H1/00 ,  H02H1/04 ,  H02H3/22 ,  H02H9/06 ,  H02H9/00 ,  H02H9/04

Abstract: A surge suppression device includes a micro electromechanical system (MEMS) switch electrically connected to a current path. Additionally, the surge suppression device includes a transient voltage suppression (TVS) device electrically connected in series to the MEMS switch. The surge suppression device is configured to protect electronic components from voltage surges or current surges.

公开(公告)号：US09997507B2

公开(公告)日：2018-06-12

申请号：US13950736

申请日：2013-07-25

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Peter Micah Sandvik ,  Rui Zhou ,  Peter Almern Losee

IPC: H01L29/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/02

CPC classification number: H01L27/0248 ,  H01L2924/0002

Abstract: A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon (Si), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

公开(公告)号：US09379189B2

公开(公告)日：2016-06-28

申请号：US14644481

申请日：2015-03-11

Applicant: General Electric Company

Inventor： Avinash Srikrishnan Kashyap ,  Peter Michah Sandvik ,  Stephen Daley Arthur

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/861 ,  H01L21/04 ,  H01L29/66 ,  H01L29/32

CPC classification number: H01L29/1608 ,  H01L21/0445 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/265 ,  H01L29/06 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/32 ,  H01L29/6606 ,  H01L29/8618 ,  H01L2924/10272

Abstract: A transient voltage suppression (TVS) device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer and comprising an ion implanted material structure between 0.1 micrometers (μm) and 22.0 μm thick, the second layer operating using punch-through physics, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer.

Abstract translation: 瞬态电压抑制（TVS）装置包括由第一导电类型材料形成的第一层宽带隙半导体材料，第二层宽带隙半导体材料，由第二导电类型材料形成，该第二导电类型材料在第一导电类型材料的至少一部分上 并且包括在0.1微米（μm）和22.0μm厚之间的离子注入材料结构，所述第二层使用穿透物理学操作，以及由第一导电类型材料形成的第三层宽带隙半导体材料，至少在 第二层的一部分。

公开(公告)号：US20160099318A1

公开(公告)日：2016-04-07

申请号：US14505975

申请日：2014-10-03

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Avinash Srikrishnan Kashyap

IPC: H01L29/16 ,  H01L27/02 ,  H01L27/08 ,  H01L29/861 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L27/0255 ,  H01L27/0814 ,  H01L29/6606 ,  H01L29/861

Abstract: A transient voltage suppression (TVS) device and a method of forming the device are provided. The TVS device includes a first layer of wide band-gap semiconductor material formed of a first conductivity type material, a second layer of wide band-gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer, the second layer including a first concentration of dopant. The TVS device further including a third layer of wide band-gap semiconductor material formed of the second conductivity type material over at least a portion of the second layer, the third layer including a second concentration of dopant, the second concentration of dopant being different than the first concentration of dopant. The TVS device further including a fourth layer of wide band-gap semiconductor material formed of the first conductivity type material over at least a portion of the third layer.

Abstract translation: 提供瞬态电压抑制（TVS）装置和形成装置的方法。 TVS器件包括由第一导电类型材料形成的第一层宽带隙半导体材料，在第一层的至少一部分上由第二导电类型材料形成的第二层宽带隙半导体材料， 第二层包括掺杂剂的第一浓度。 TVS器件还包括在第二层的至少一部分上由第二导电类型材料形成的第三层宽带隙半导体材料，第三层包括第二浓度的掺杂剂，第二掺杂剂浓度不同于 掺杂剂的第一个浓度。 TVS器件还包括在第三层的至少一部分上由第一导电类型材料形成的第四层宽带隙半导体材料。