公开(公告)号：US11271076B2

公开(公告)日：2022-03-08

申请号：US16517222

申请日：2019-07-19

Applicant: General Electric Company

Inventor： Stephen Daley Arthur ,  Victor Mario Torres ,  Michael J. Hartig ,  Reza Ghandi ,  David Alan Lilienfeld ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/15 ,  H01L31/0312 ,  H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: The subject matter disclosed herein relates to semiconductor power devices and, more specifically, to junction termination designs for wide-bandgap (e.g., silicon carbide) semiconductor power devices. A disclosed semiconductor device includes a first epitaxial (epi) layer disposed on a substrate layer, wherein a termination area of the first epi layer has a minimized epi doping concentration of a first conductivity type (e.g., n-type). The device also includes a second epi layer disposed on the first epi layer, wherein a termination area of the second epi layer has the minimized epi doping concentration of the first conductivity type and includes a first plurality of floating regions of a second conductivity type (e.g., p-type) that form a first junction termination of the device.

公开(公告)号：US10957759B2

公开(公告)日：2021-03-23

申请号：US16235486

申请日：2018-12-28

Applicant: General Electric Company

Inventor： Stephen Daley Arthur ,  Reza Ghandi ,  Alexander Viktorovich Bolotnikov ,  David Alan Lilienfeld ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: A silicon carbide (SiC) charge balance (CB) device includes a CB layer, which includes a first epitaxial (epi) layer. An active area of the first epi layer includes a first doping concentration of a first conductivity type and a first plurality of CB regions of a second conductivity type. A termination area of the first epi layer includes a minimized epi doping concentration of the first conductivity type. The SiC—CB device also includes a device layer, which includes a second epi layer disposed on the CB layer. An active area of the second epi layer includes the first doping concentration of the first conductivity type. A termination area of the device layer includes the minimized epi doping concentration of the first conductivity type and a first plurality of floating regions of the second conductivity type that form a junction termination of the device.

公开(公告)号：US20190245035A1

公开(公告)日：2019-08-08

申请号：US15890077

申请日：2018-02-06

Applicant: General Electric Company

Inventor： Reza Ghandi ,  David Alan Lilienfeld ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/02 ,  H01L21/761 ,  H01L21/265 ,  H01L21/324 ,  H01L27/088 ,  H01L27/092

CPC classification number: H01L29/0646 ,  H01L21/02529 ,  H01L21/26506 ,  H01L21/324 ,  H01L21/761 ,  H01L27/088 ,  H01L27/092 ,  H01L29/1608

Abstract: An integrated circuit includes a silicon carbide (SiC) epitaxial layer disposed on a SiC layer, wherein the SiC epitaxial layer has a first conductivity-type and the SiC layer has a second conductivity-type that is opposite to the first conductivity-type. The integrated circuit also includes a junction isolation feature disposed in the SiC epitaxial layer and having the second conductivity-type. The junction isolation feature extends vertically through a thickness of the SiC epitaxial layer and contacts the SiC layer, and wherein the junction isolation feature has a depth of at least about 2 micrometers (μm).

公开(公告)号：US20190140048A1

公开(公告)日：2019-05-09

申请号：US16010531

申请日：2018-06-18

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Reza Ghandi ,  David Alan Lilienfeld ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L21/04 ,  H01L29/20 ,  H01L21/266 ,  H01L29/78 ,  H01L21/265 ,  H01L29/16

Abstract: The subject matter disclosed herein relates to super-junction (SJ) power devices and, more specifically, to edge termination techniques for SJ power devices. A semiconductor super-junction (SJ) device includes one or more epitaxial (epi) layers having a termination region disposed adjacent to an active region. The termination region includes a plurality of vertical pillars of a first and a second conductivity-type, wherein, moving outward from the active region, a respective width of each successive vertical pillar is the same or smaller. The termination region also includes a plurality of compensated regions having a low doping concentration disposed directly between a first side of each vertical pillar of the first conductivity-type and a first side of each vertical pillar of the second conductivity-type, wherein, moving outward from the active region, a respective width of each successive compensated region is the same or greater.

公开(公告)号：US10243039B2

公开(公告)日：2019-03-26

申请号：US15077579

申请日：2016-03-22

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  David Alan Lilienfeld ,  Reza Ghandi

IPC: H01L21/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/73 ,  H01L29/78 ,  H01L29/732 ,  H01L29/808 ,  H01L29/861 ,  H01L29/872

Abstract: A super junction (SJ) device may include one or more charge balance (CB) layers. Each CB layer may include an epitaxial (epi) layer having a first conductivity type and a plurality of charge balance (CB) regions having a second conductivity type. Additionally, the SJ device may include a connection region having the second conductivity type that extends from a region disposed in a top surface of a device layer of the SJ device to one or more of the CB regions. The connection region may enable carriers to flow directly from the region to the one or more CB regions, which may decrease switching losses of the SJ device.

公开(公告)号：US20180166531A1

公开(公告)日：2018-06-14

申请号：US15379214

申请日：2016-12-14

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Reza Ghandi ,  David Alan Lilienfeld ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L29/0634 ,  H01L21/26506 ,  H01L21/266 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36

Abstract: The subject matter disclosed herein relates to super-junction (SJ) power devices and, more specifically, to edge termination techniques for SJ power devices. A semiconductor super-junction (SJ) device includes one or more epitaxial (epi) layers having a termination region disposed adjacent to an active region. The termination region includes a plurality of vertical pillars of a first and a second conductivity-type, wherein, moving outward from the active region, a respective width of each successive vertical pillar is the same or smaller. The termination region also includes a plurality of compensated regions having a low doping concentration disposed directly between a first side of each vertical pillar of the first conductivity-type and a first side of each vertical pillar of the second conductivity-type, wherein, moving outward from the active region, a respective width of each successive compensated region is the same or greater.

公开(公告)号：US20140167068A1

公开(公告)日：2014-06-19

申请号：US13718031

申请日：2012-12-18

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Zachary Matthew Stum ,  Reza Ghandi

IPC: H01L29/16 ,  H01L21/02

CPC classification number: H01L29/7802 ,  H01L21/02697 ,  H01L21/0485 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/31111 ,  H01L21/32133 ,  H01L21/324 ,  H01L23/5226 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/808 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.

Abstract translation: 提出了一种碳化硅器件，其包括设置在碳化硅衬底的一部分上的栅电极以及设置在栅电极上的电介质膜。 该器件具有设置在栅电极附近的接触区域，并且具有设置在电介质膜上方并且在接触区域上方的层。 该层包括设置在电介质膜上的部分的镍，并且包括设置在接触区域上的部分的硅化镍。 镍硅化物层被配置为向碳化硅器件的接触区域提供欧姆接触。

公开(公告)号：US20240096936A1

公开(公告)日：2024-03-21

申请号：US17948670

申请日：2022-09-20

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Collin William Hitchcock ,  Reza Ghandi

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/1037 ,  H01L29/66068 ,  H01L29/7827 ,  H01L29/1608

Abstract: A super-junction (SJ) device includes a first epitaxial (epi layer) that forms a first SJ layer of the SJ device and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area and a termination area of the first epi layer includes a first set of SJ pillars that have a particular doping concentration of a first conductivity type and a second set of SJ pillars that have the particular doping concentration of a second conductivity type. A termination area of the second epi layer includes one or more implanted regions that form a junction termination that overlaps with at least one SJ pillar of the first set of SJ pillars or the second set of SJ pillars in the termination area of the first epi layer.

公开(公告)号：US11245003B2

公开(公告)日：2022-02-08

申请号：US16517193

申请日：2019-07-19

Applicant: General Electric Company

Inventor： Stephen Daley Arthur ,  Victor Mario Torres ,  Michael J. Hartig ,  Reza Ghandi ,  David Alan Lilienfeld ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/15 ,  H01L31/0312 ,  H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: A disclosed super-junction (SJ) device includes a first epitaxial (epi) layer that forms a first SJ layer of the SJ device, and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area of the first and second epi layers includes a first set of SJ pillars comprising a particular doping concentration of a first conductivity type and a second set of SJ pillars comprising the particular doping concentration of a second conductivity type. A termination area of the first and second epi layers has a minimized epi doping concentration of the first conductivity type that is less than the particular doping concentration, and the termination area of the second epi layer includes a plurality of floating regions of the second conductivity type that form a junction termination of the SJ device.

公开(公告)号：US20220037201A1

公开(公告)日：2022-02-03

申请号：US16983380

申请日：2020-08-03

Applicant: General Electric Company

Inventor： Cheng-Po Chen ,  Reza Ghandi ,  David Richard Esler ,  David Mulford Shaddock ,  Emad Andarawis Andarawis ,  Liang Yin

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L23/532 ,  H01L23/00

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.