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公开(公告)号：US20170053968A1
公开(公告)日：2017-02-23
申请号：US15306125
申请日：2014-04-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Xia Sheng , Yoocharn Jeon , Jianhua Yang , Hans S. Cho , Richard H. Henze
CPC classification number: H01L27/2463 , G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/71 , G11C2213/73 , H01L27/2481 , H01L27/249 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1675 , H01L45/1683
Abstract: A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.
Abstract translation: 电阻式存储器件包括与导体接触的导体和电阻式存储器堆叠。 电阻式存储器堆叠包括多组分电极和开关区域。 多组分电极包括具有表面的基极电极和基极电极表面上的惰性材料电极，其形式为i）薄层，或ii）不连续的纳米岛。 当惰性材料电极为薄层形式时，开关区域与导体和惰性材料电极接触; 或者当惰性材料电极为不连续的纳米岛的形式时，开关区域与惰性材料电极接触导体，并与基极的氧化部分接触。
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公开(公告)号：US10541026B2
公开(公告)日：2020-01-21
申请号：US16353451
申请日：2019-03-14
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Miao Hu , John Paul Strachan , Ning Ge
Abstract: A memristive dot-product system for vector processing is described. The memristive dot-product system includes a crossbar array having a number of memory elements. Each memory element includes a memristor. Each memory element includes a transistor. The system also includes a vector input register. The system also includes a vector output register.
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公开(公告)号：US10325655B2
公开(公告)日：2019-06-18
申请号：US15556361
申请日：2015-04-10
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , Jianhua Yang , Miao Hu , John Paul Strachan
Abstract: A temperature compensation circuit may comprise a temperature sensor to sense a temperature signal of a memristor crossbar array, a signal converter to convert the temperature signal to an electrical control signal, and a voltage compensation circuit to determine a compensation voltage based on the electrical control signal and pre-calibrated temperature data of the memristor crossbar array.
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公开(公告)号：US10181349B2
公开(公告)日：2019-01-15
申请号：US15535765
申请日：2014-12-15
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , Jianhua Yang , John Paul Strachan , Miao Hu
Abstract: Provided in one example is a nonvolatile memory cross-bar array. The array includes: a number of junctions formed by a number of row lines intersecting a number of column lines; a first set of controls at a first set of the junctions coupling between a first set of the row lines and a first set of the column lines; a second set of controls at a second set of the junctions coupling between a second set of the row lines and a second set of the column lines; and a current collection line to collect currents from the controls of the first set and the second set through their respective column lines and output a result current corresponding to a sum of a first dot product and a second dot product.
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公开(公告)号：US10096651B2
公开(公告)日：2018-10-09
申请号：US15329913
申请日：2015-01-29
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Ning Ge , Katy Samuels , Minxian Max Zhang
Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
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Patent Agency Ranking
公开(公告)号：US09905757B2
公开(公告)日：2018-02-27
申请号：US15032913
申请日：2013-11-12
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Byungjoon Choi , Jianhua Yang , R. Stanley Williams , Gary Gibson , Warren Jackson
CPC classification number: H01L45/1226 , H01L27/2418 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.
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公开(公告)号：US20170323677A1
公开(公告)日：2017-11-09
申请号：US15522344
申请日：2014-10-28
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Ning Ge , John Paul Strachan , Jianhua Yang , Miao Hu
Abstract: A method of obtaining a dot product includes applying a programming signal to a number of capacitive memory devices coupled at a number of junctions formed between a number of row lines and a number of column lines. The programming signal defines a number of values within a matrix. The method further includes applying a vector signal. The vector signal defines a number of vector values to be applied to the capacitive memory devices.
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公开(公告)号：US20170271591A1
公开(公告)日：2017-09-21
申请号：US15500050
申请日：2015-02-13
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Warren Jackson , Jianhua Yang , Kyung Min Kim , Zhiyong Li
CPC classification number: H01L45/147 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/73 , G11C2213/77 , H01L27/2463 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/16
Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.
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公开(公告)号：US20170271408A1
公开(公告)日：2017-09-21
申请号：US15329896
申请日：2015-01-28
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Ning Ge , Zhiyong Li , Richard H. Henze
CPC classification number: H01L27/2418 , H01L27/2427 , H01L45/04 , H01L45/146 , H01L45/16 , H01L45/1608
Abstract: A method of forming a multi-layered selector of a memory cell is described. In the method, a memory element of the memory cell is formed. The memory element stores information. A multi-layered selector of the memory cell is formed by alternating deposition of at least a dielectric layer and a first diffusion layer. The first diffusion layer includes fast diffusive ions. The multi-layered selector is coupled to the memory element in a memory cell.
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公开(公告)号：US20170271406A1
公开(公告)日：2017-09-21
申请号：US15500053
申请日：2015-02-27
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Jianhua Yang , Gary Gibson , Zhiyong Li
CPC classification number: H01L27/2409 , H01L45/04 , H01L45/146
Abstract: A superlinear selector includes a first electrode, a second electrode, and an active layer coupled in series between the first electrode and the second electrode. The active layer includes a superlinear electrical conductor and an electrical insulator. One of the superlinear electrical conductor and the electrical insulator forms a matrix in which the other of the superlinear electrical conductor and the electrical insulator is dispersed.
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