公开(公告)号：US10062631B2

公开(公告)日：2018-08-28

申请号：US15181044

申请日：2016-06-13

Applicant: Hyundai Motor Company

Inventor： Young Seok Kim ,  Hyun Woo Noh ,  Kyoung Kook Hong ,  Su Bin Kang

IPC: H01L23/367 ,  H01L23/495 ,  H01L23/00 ,  H01L23/492

CPC classification number: H01L23/3675 ,  H01L23/367 ,  H01L23/492 ,  H01L23/49537 ,  H01L23/49541 ,  H01L24/33 ,  H01L24/40 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/8385 ,  H01L2224/8485 ,  H01L2924/17747 ,  H01L2924/00014

Abstract: A power module capable of increasing structural stability and reliability at high temperatures includes: an upper substrate having a metal layer; a lower substrate spaced apart from the upper substrate and having a metal layer facing the metal layer of the upper substrate; a semiconductor element configured to be disposed between the upper substrate and the lower substrate; and at least one leg portion formed on at least one of the metal layer of the upper substrate and the metal layer of the lower substrate to make the upper substrate and the lower substrate be spaced apart from each other at a predetermined interval, in which the leg portion may be electrically connect the semiconductor element to the metal layer of the upper substrate or the metal layer of the lower substrate.

公开(公告)号：US09972597B2

公开(公告)日：2018-05-15

申请号：US14800613

申请日：2015-07-15

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Kyoung-Kook Hong ,  Hyun Woo Noh ,  Youngkyun Jung ,  Dae Hwan Chun ,  Jong Seok Lee ,  Su Bin Kang

IPC: B23K31/00 ,  B23K35/00 ,  H01L23/00 ,  B23K35/02 ,  B23K35/26 ,  B23K35/30 ,  B23K20/02 ,  B23K20/16 ,  B23K20/233 ,  H05K3/34 ,  B23K101/42 ,  B23K103/16

CPC classification number: H01L24/83 ,  B23K20/026 ,  B23K20/16 ,  B23K20/233 ,  B23K35/025 ,  B23K35/264 ,  B23K35/3006 ,  B23K2101/42 ,  B23K2103/166 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13294 ,  H01L2224/13313 ,  H01L2224/13339 ,  H01L2224/16227 ,  H01L2224/16505 ,  H01L2224/29294 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/32227 ,  H01L2224/32505 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81825 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2924/00015 ,  H01L2924/10272 ,  H01L2924/201 ,  H01L2924/2075 ,  H01L2924/20751 ,  H05K3/341 ,  H05K3/3463 ,  H05K2201/10166 ,  H05K2203/1131 ,  H01L2224/29388 ,  H01L2924/00014 ,  H01L2224/13388 ,  H01L2924/00012

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.