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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150179794A1

    公开(公告)日：2015-06-25

    申请号：US14314813

    申请日：2014-06-25

    Applicant: Hyundai Motor Company

    Inventor： Kyoung-Kook HONG ,  Dae Hwan Chun ,  Jong Seok Lee ,  Youngkyun Jung ,  Su Bin Kang

    IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/16 ,  H01L29/22

    CPC classification number: H01L29/7827 ,  H01L21/02565 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/22 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7813

    Abstract: Disclosed are a semiconductor device and a method of manufacturing a semiconductor device. The device may include an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a p type epitaxial layer disposed on the n− type epitaxial layer, an n+ region disposed on the p type epitaxial layer, a trench passing through the p type epitaxial layer and the n+ region and disposed on the n− type epitaxial layer, a p+ region disposed on the n− type epitaxial layer and separated from the trench, a gate insulating layer positioned in the trench, a gate electrode positioned on the gate insulating layer, an oxide layer positioned on the gate electrode, a source electrode positioned on the n+ region, the oxide layer, and the p+ region, and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, in which channels are positioned on both sides of the trench.

    Abstract translation: 公开了一种半导体器件和半导体器件的制造方法。 器件可以包括设置在n +型碳化硅衬底的第一表面上的n型外延层，设置在n型外延层上的ap型外延层，设置在p型外延层上的n +区，沟槽通过 通过p型外延层和n +区并且设置在n型外延层上，设置在n型外延层上并与沟槽分离的p +区，位于沟槽中的栅极绝缘层，位于 在栅极绝缘层上，位于栅电极上的氧化物层，位于n +区上的源极，氧化物层和p +区，以及位于n +型碳化硅衬底的第二表面上的漏电极， 其中通道位于沟槽的两侧。

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