公开(公告)号：US07521034B2

公开(公告)日：2009-04-21

申请号：US11648569

申请日：2007-01-03

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： C01B31/36

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

公开(公告)号：US07364714B2

公开(公告)日：2008-04-29

申请号：US10481578

申请日：2002-06-21

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： C01B31/36

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

公开(公告)号：US07063742B1

公开(公告)日：2006-06-20

申请号：US09926188

申请日：2000-03-27

申请人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

发明人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

IPC分类号： C30B29/04

CPC分类号： C30B25/105 ,  C30B29/04 ,  Y10S117/902

摘要： A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

摘要翻译： 抛光衬底并制成倾斜衬底，其暴露于氢等离子体并由此平滑化。 然后将基板受控制地加热直到其表面温度达到830℃。同时，将1％甲烷，50ppm硫化氢和氢气的气体混合物引入管式反应容器中，以200ml / min流过，其中微波等离子体 被激发以使n型半导体金刚石在衬底上外延生长。 因此形成离子掺杂的n型半导体，其具有在0.38eV的激活能的单个施主电平，并且移动性高，质量高。

公开(公告)号：US20100171409A1

公开(公告)日：2010-07-08

申请号：US12095015

申请日：2006-11-24

申请人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

发明人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

IPC分类号： H01J1/02 ,  B32B7/00 ,  B32B9/00 ,  B32B17/06 ,  B32B15/04 ,  B32B5/16 ,  B05D3/02 ,  C25D9/04 ,  C25D17/00

CPC分类号： H01J1/304 ,  B01J23/75 ,  B01J35/002 ,  B01J35/0033 ,  B01J37/14 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/24174 ,  Y10T428/256 ,  Y10T428/30

摘要： A novel carbon nanotube (64) is featured in that it has the highest Raman scattering intensity in the vicinity of 1580 cm−1 in its Raman spectrum. Carbon nanotubes can be grown on and from the catalytic fine particles (63) which consist of ultra-fine particles of cobalt oxide catalyst onto a substrate comprising a conductive substrate (62) and fine particles (63) of catalyst formed on a surface thereof. An electron emission device (60) so configured as to emit electrons by applying a voltage to apical ends (64a) of such carbon nanotubes (64) can be reduced in driving voltage and can achieve a current such as to emit a fluorescent material on the market for low-velocity electron beams. The electron emission device (60) needs no gate and can thus simplify the structure and reduce the cost of a surface light-emitting device for which the element is used. The carbon material remains unoxidized even in a low vacuum and thus allows realizing a light emitting device that can be paneled more easily, and is longer in operating life than those using a conventional electron emission device.

摘要翻译： 一种新型碳纳米管（64）的特征在于其拉曼光谱中在1580cm -1附近具有最高的拉曼散射强度。 碳纳米管可以在由氧化钴催化剂的超细颗粒组成的催化微粒（63）上生长到包含在其表面上形成的导电基材（62）和催化剂的细颗粒（63）的基材上。 通过向这种碳纳米管（64）的顶端（64a）施加电压而配置为发射电子的电子发射装置（60）可以降低驱动电压，并且可以实现电流，例如在 低速电子束市场。 电子发射装置（60）不需要栅极，因此可以简化结构并降低使用元件的表面发光装置的成本。 即使在低真空中，碳材料也保持未氧化，因此能够实现与使用常规的电子发射装置相比，可以更容易地镶嵌的发光装置和使用寿命更长的发光装置。

公开(公告)号：US20100124526A1

公开(公告)日：2010-05-20

申请号：US12385184

申请日：2009-04-01

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： D01F9/12 ,  B01J19/08 ,  C01B31/36

CPC分类号： B82Y30/00 ,  B01J10/007 ,  B01J2219/00094 ,  B01J2219/0013 ,  B01J2219/00263 ,  B01J2219/0884 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/166 ,  C01B2202/08 ,  Y10S977/844

摘要： A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature. The synthesis apparatus comprises: a liquid chamber or tank (1) for an organic liquid; a water cooling means (2) for cooling the liquid tank (1) from its outside; a substrate holder (5) for holding a substrate (3), the holder having electrodes (4) for passing an electric current through the substrate (3); a condensing means (7) comprising water cooling tubes (6) for cooling and condensing vapor made from the organic liquid by its vaporization to return it to the liquid for return into the liquid tank (1); a valve (8) through which N2 gas is introduced; and a lid (9) that carries the substrate holder (5), the condensing means (7) and the valve (8). The organic liquid (10) is thus tightly sealed in the liquid tank (1) by the lid (9). This synthesis apparatus allows carbon nanotubes to be synthesized in large quantities, at low cost and in safety. Highly coaxially and densely oriented, aligned carbon nanotubes can be synthesized in the form of a bundle thereof, which when used in a variety of products brings about various excellent effects including extremely high usability.

摘要翻译： 提供了能够以低成本和大量合成碳纳米管的方法，可用于实施该方法的装置，以及紧密地对准并牢固地结合到Si衬底并且垂直于其整个表面的碳纳米管。 通过在其上积聚由至少一种金属元素构成的薄膜或细小岛状颗粒的基板，由有机液体合成高取向的排列碳纳米管; 将具有积聚的衬底（3）暴露于氢等离子体; 以及将暴露于有机液体（10）中的氢等离子体的衬底（3）加热至预定温度。 合成装置包括：用于有机液体的液体室或罐（1）; 用于从其外部冷却液体罐（1）的水冷装置（2）; 用于保持基板（3）的基板保持器（5），所述保持器具有用于使电流通过所述基板（3）的电极（4）; 冷凝装置（7），包括水冷却管（6），用于通过其蒸发冷却和冷凝由有机液体制成的蒸汽，以将其返回到液体以返回到液体箱（1）中; 引入N 2气体的阀（8）; 以及承载基板保持件（5），冷凝装置（7）和阀（8）的盖（9）。 有机液体（10）因此通过盖（9）紧密地密封在液体罐（1）中。 该合成装置允许以低成本和安全性大量合成碳纳米管。 高度同轴且致密定向的碳纳米管可以以其束的形式合成，当用于各种产品时，可以产生包括极高的可用性的各种优异的效果。

公开(公告)号：US07608331B2

公开(公告)日：2009-10-27

申请号：US11597361

申请日：2005-05-10

申请人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hirokazu Oda

发明人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hirokazu Oda

IPC分类号： B32B5/16 ,  B05D7/00

CPC分类号： B82Y30/00 ,  B01J23/44 ,  B01J23/75 ,  B01J23/755 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  Y10T428/2991

摘要： A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.

摘要翻译： 公开了一种由金刚石作为核并由其径向生长的碳纳米材料形成的细小球形颗粒，其显示出Marimo（Cladophora sauteri）颗粒的外观。 其表面被氧化并处理以携带过渡金属催化剂的细金刚石催化剂颗粒2在烃的气相中漂浮并搅拌，同时在选定的温度下加热以产生合成碳纳米材料并使其成长的催化反应 在所述氧化的细金刚石颗粒的表面上。 从作为芯的细金刚石催化剂粒子31生长纳米尺寸的纳米纤维或长丝32，以形成双峰型碳。 碳纳米材料如果负载的过渡金属是Ni或Co成为碳纳米管，如果是Pd，则成为硬币堆积的碳纳米石墨。

公开(公告)号：US20080003162A1

公开(公告)日：2008-01-03

申请号：US11648569

申请日：2007-01-03

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： C01B31/36

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。