公开(公告)号：US07608331B2

公开(公告)日：2009-10-27

申请号：US11597361

申请日：2005-05-10

申请人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hirokazu Oda

发明人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hirokazu Oda

IPC分类号： B32B5/16 ,  B05D7/00

CPC分类号： B82Y30/00 ,  B01J23/44 ,  B01J23/75 ,  B01J23/755 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  Y10T428/2991

摘要： A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.

摘要翻译： 公开了一种由金刚石作为核并由其径向生长的碳纳米材料形成的细小球形颗粒，其显示出Marimo（Cladophora sauteri）颗粒的外观。 其表面被氧化并处理以携带过渡金属催化剂的细金刚石催化剂颗粒2在烃的气相中漂浮并搅拌，同时在选定的温度下加热以产生合成碳纳米材料并使其成长的催化反应 在所述氧化的细金刚石颗粒的表面上。 从作为芯的细金刚石催化剂粒子31生长纳米尺寸的纳米纤维或长丝32，以形成双峰型碳。 碳纳米材料如果负载的过渡金属是Ni或Co成为碳纳米管，如果是Pd，则成为硬币堆积的碳纳米石墨。

公开(公告)号：US08557213B2

公开(公告)日：2013-10-15

申请号：US12095015

申请日：2006-11-24

申请人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

发明人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

IPC分类号： D01F9/12 ,  H01J1/02 ,  B32B7/00 ,  B32B9/00 ,  B32B17/06 ,  B32B15/04 ,  B32B5/16 ,  B05D3/02 ,  C25D9/04 ,  C25D17/00

CPC分类号： H01J1/304 ,  B01J23/75 ,  B01J35/002 ,  B01J35/0033 ,  B01J37/14 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/24174 ,  Y10T428/256 ,  Y10T428/30

摘要： A novel carbon nanotube (64) is featured in that it has the highest Raman scattering intensity in the vicinity of 1580 cm−1 in its Raman spectrum. Carbon nanotubes can be grown on and from the catalytic fine particles (63) which consist of ultra-fine particles of cobalt oxide catalyst onto a substrate comprising a conductive substrate (62) and fine particles (63) of catalyst formed on a surface thereof. An electron emission device (60) so configured as to emit electrons by applying a voltage to apical ends (64a) of such carbon nanotubes (64) can be reduced in driving voltage and can achieve a current such as to emit a fluorescent material on the market for low-velocity electron beams. The electron emission device (60) needs no gate and can thus simplify the structure and reduce the cost of a surface light-emitting device for which the element is used. The carbon material remains unoxidized even in a low vacuum and thus allows realizing a light emitting device that can be paneled more easily, and is longer in operating life than those using a conventional electron emission device.

摘要翻译： 一种新型碳纳米管（64）的特征在于其拉曼光谱中在1580cm -1附近具有最高的拉曼散射强度。 碳纳米管可以在由氧化钴催化剂的超细颗粒组成的催化微粒（63）上生长到包含在其表面上形成的导电基材（62）和催化剂的细颗粒（63）的基材上。 通过向这种碳纳米管（64）的顶端（64a）施加电压而配置为发射电子的电子发射装置（60）可以降低驱动电压，并且可以实现电流，例如在 低速电子束市场。 电子发射装置（60）不需要栅极，因此可以简化结构并降低使用元件的表面发光装置的成本。 即使在低真空中，碳材料也保持未氧化，因此能够实现与使用常规的电子发射装置相比，可以更容易地镶嵌的发光装置和使用寿命更长的发光装置。

公开(公告)号：US20100171409A1

公开(公告)日：2010-07-08

申请号：US12095015

申请日：2006-11-24

申请人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

发明人： Toshihiro Ando ,  Kiyoharu Nakagawa ,  Mika Gamo ,  Hidenori Gamo

IPC分类号： H01J1/02 ,  B32B7/00 ,  B32B9/00 ,  B32B17/06 ,  B32B15/04 ,  B32B5/16 ,  B05D3/02 ,  C25D9/04 ,  C25D17/00

CPC分类号： H01J1/304 ,  B01J23/75 ,  B01J35/002 ,  B01J35/0033 ,  B01J37/14 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/24174 ,  Y10T428/256 ,  Y10T428/30

摘要： A novel carbon nanotube (64) is featured in that it has the highest Raman scattering intensity in the vicinity of 1580 cm−1 in its Raman spectrum. Carbon nanotubes can be grown on and from the catalytic fine particles (63) which consist of ultra-fine particles of cobalt oxide catalyst onto a substrate comprising a conductive substrate (62) and fine particles (63) of catalyst formed on a surface thereof. An electron emission device (60) so configured as to emit electrons by applying a voltage to apical ends (64a) of such carbon nanotubes (64) can be reduced in driving voltage and can achieve a current such as to emit a fluorescent material on the market for low-velocity electron beams. The electron emission device (60) needs no gate and can thus simplify the structure and reduce the cost of a surface light-emitting device for which the element is used. The carbon material remains unoxidized even in a low vacuum and thus allows realizing a light emitting device that can be paneled more easily, and is longer in operating life than those using a conventional electron emission device.

摘要翻译： 一种新型碳纳米管（64）的特征在于其拉曼光谱中在1580cm -1附近具有最高的拉曼散射强度。 碳纳米管可以在由氧化钴催化剂的超细颗粒组成的催化微粒（63）上生长到包含在其表面上形成的导电基材（62）和催化剂的细颗粒（63）的基材上。 通过向这种碳纳米管（64）的顶端（64a）施加电压而配置为发射电子的电子发射装置（60）可以降低驱动电压，并且可以实现电流，例如在 低速电子束市场。 电子发射装置（60）不需要栅极，因此可以简化结构并降低使用元件的表面发光装置的成本。 即使在低真空中，碳材料也保持未氧化，因此能够实现与使用常规的电子发射装置相比，可以更容易地镶嵌的发光装置和使用寿命更长的发光装置。

公开(公告)号：US20080193764A1

公开(公告)日：2008-08-14

申请号：US11597361

申请日：2005-05-10

申请人： Toshihiro Ando ,  Kiyohara Nakagawa ,  Mika Gamo ,  Hirokazu Oda

发明人： Toshihiro Ando ,  Kiyohara Nakagawa ,  Mika Gamo ,  Hirokazu Oda

IPC分类号： C01B31/02 ,  B01J23/44 ,  B01J23/75 ,  B01J23/755 ,  C01B31/06

CPC分类号： B82Y30/00 ,  B01J23/44 ,  B01J23/75 ,  B01J23/755 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  Y10T428/2991

摘要： A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.

摘要翻译： 公开了一种由金刚石作为核并由其径向生长的碳纳米材料形成的细小球形颗粒，其显示出Marimo（Cladophora sauteri）颗粒的外观。 其表面被氧化并处理以携带过渡金属催化剂的细金刚石催化剂颗粒2在烃的气相中漂浮并搅拌，同时在选定的温度下加热以产生合成碳纳米材料并使其成长的催化反应 在所述氧化的细金刚石颗粒的表面上。 从作为芯的细金刚石催化剂粒子31生长纳米尺寸的纳米纤维或长丝32，以形成双峰型碳。 碳纳米材料如果负载的过渡金属是Ni或Co成为碳纳米管，如果是Pd，则成为硬币堆积的碳纳米石墨。

公开(公告)号：US08893645B2

公开(公告)日：2014-11-25

申请号：US12385184

申请日：2009-04-01

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： B05C3/00 ,  B01J8/00 ,  C01B31/02 ,  B01J10/00 ,  B82Y40/00 ,  B82Y30/00

CPC分类号： B82Y30/00 ,  B01J10/007 ,  B01J2219/00094 ,  B01J2219/0013 ,  B01J2219/00263 ,  B01J2219/0884 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/166 ,  C01B2202/08 ,  Y10S977/844

摘要： An apparatus for synthesizing highly oriented, aligned carbon nanotubes from an alcohol includes a liquid tank for retaining an alcohol; a water cooling device for cooling the liquid tank from its outside; a condensing device for cooling and condensing vapor from the alcohol; a substrate holding device having an electrode for passing an electric current through the substrate in the alcohol; an inert gas inlet for removing air; a tank sealing device to prevent the alcohol becoming gaseous in phase; and a temperature measuring device, wherein the Si substrate with a buildup thereon of the thin film or insular particles is heated by electric current to a temperature, thereby providing a temperature gradient from the Si substrate surface toward the alcohol, wherein said thin film or insular particles is a catalyst for synthesizing carbon nanotubes, and the carbon nanotubes are synthesized.

摘要翻译： 用于从醇中合成高定向取向的碳纳米管的装置包括用于保持醇的液体罐; 用于从其外部冷却液体罐的水冷装置; 用于冷却和冷凝来自酒精的蒸气的冷凝装置; 具有使电流通过所述基材中的电极的基板保持装置; 用于除去空气的惰性气体入口; 用于防止酒精相变成气态的罐密封装置; 以及温度测量装置，其中将其上堆积有薄膜或岛状颗粒的Si衬底通过电流加热到一个温度，从而提供从Si衬底表面朝向醇的温度梯度，其中所述薄膜或岛状 颗粒是用于合成碳纳米管的催化剂，并且合成碳纳米管。

公开(公告)号：US07521034B2

公开(公告)日：2009-04-21

申请号：US11648569

申请日：2007-01-03

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： C01B31/36

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

公开(公告)号：US07364714B2

公开(公告)日：2008-04-29

申请号：US10481578

申请日：2002-06-21

申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

IPC分类号： C01B31/36

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

公开(公告)号：US07063742B1

公开(公告)日：2006-06-20

申请号：US09926188

申请日：2000-03-27

申请人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

发明人： Toshihiro Ando ,  Yoichiro Sato ,  Eiji Yasu ,  Mika Gamo ,  Isao Sakaguchi

IPC分类号： C30B29/04

CPC分类号： C30B25/105 ,  C30B29/04 ,  Y10S117/902

摘要： A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.

摘要翻译： 抛光衬底并制成倾斜衬底，其暴露于氢等离子体并由此平滑化。 然后将基板受控制地加热直到其表面温度达到830℃。同时，将1％甲烷，50ppm硫化氢和氢气的气体混合物引入管式反应容器中，以200ml / min流过，其中微波等离子体 被激发以使n型半导体金刚石在衬底上外延生长。 因此形成离子掺杂的n型半导体，其具有在0.38eV的激活能的单个施主电平，并且移动性高，质量高。

公开(公告)号：US07879309B2

公开(公告)日：2011-02-01

申请号：US12716917

申请日：2010-03-03

申请人： Tadashi Mitsui ,  Takashi Sekiguchi ,  Mika Gamo ,  Yafei Zhang ,  Toshihiro Ando

发明人： Tadashi Mitsui ,  Takashi Sekiguchi ,  Mika Gamo ,  Yafei Zhang ,  Toshihiro Ando

IPC分类号： C09C1/56 ,  B01J19/08 ,  C01B31/02 ,  D01F9/12

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B21/064 ,  C01B32/152 ,  C01B32/162 ,  C01B32/174 ,  C01B32/956 ,  C01B2202/02 ,  C01B2202/06 ,  C01P2004/03 ,  C01P2004/13 ,  C01P2004/133 ,  Y10S977/736 ,  Y10S977/744 ,  Y10S977/843 ,  Y10S977/846

摘要： A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).

摘要翻译： 公开了一种方法，其中功能纳米材料如单层碳纳米管，单层氮化硼纳米管，单层碳化硅纳米管，多层控制的多层碳纳米管，多层氮化硼纳米管的层数控制， 以高产率制造具有控制层数的多层碳化硅纳米管，含有金属的富勒烯和含有控制层数的富勒烯金属。 根据该方法，当通过化学气相沉积或液相生长工艺形成多层碳纳米管（3）时，除了主反应物（CH4，H2）之外还引入吸热反应助剂（H 2 S） 形成单层碳纳米管（4）。

公开(公告)号：US20050089680A1

公开(公告)日：2005-04-28

申请号：US10481578

申请日：2002-06-21

申请人： Toshihiro Ando ,  Mika Gamo

发明人： Toshihiro Ando ,  Mika Gamo

IPC分类号： B82B1/00 ,  B82B3/00 ,  C01B31/36 ,  C30B11/00 ,  C30B25/00 ,  C30B25/10 ,  C30B29/62 ,  B32B15/04

CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

摘要： The present invention offers a synthesizing method of 3C—SiC: nanowhisker wherein its diameter anid length can be controlled, it can grow on Si substrate, and wherein said method is safe and its cost is low. and said whisker cart emit visible light of various wravelength. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma GVD apparaturi and by holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate 1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particle (3), whisker surface is terminated with H so to maintain the diameter constant, and the metal liquid particle (3) at whisker root takes in Si from Si substrate (1) and penetrates into Si substrate (1). This 3C—SiC nanowhicker cani be used as light-emitting material suitable to Si process, and 3C—SiC nanowhisker device which can emit light boased on quantum confinement effect and Si device can, if mixed together, form very useful device.

摘要翻译： 本发明提供3C-SiC：纳米晶须的合成方法，其中可以控制其直径的长度，它可以在Si衬底上生长，并且其中所述方法是安全的并且其成本低。 并且所述晶须车发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2），将该Si衬底（1）放置在等离子体GVD器件中并通过在预定衬底温度下保持预定时间来形成3C-SiC纳米晶须 由氢和烃组成的等离子体。 Si衬底1的Si）和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持直径恒定 ，晶须根部的金属液体粒子（3）从Si基板（1）吸收Si并渗入Si基板（1）。 该3C-SiC纳米振子可用作适用于Si工艺的发光材料，并且可以发射光量子限制效应的Si-SiC纳米晶须器件，如果混合在一起形成非常有用的器件。