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    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
    12.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
    磁阻效应元件，磁头，磁头组件，磁存储系统

    公开(公告)号：US07738220B1

    公开(公告)日：2010-06-15

    申请号：US11779034

    申请日：2007-07-17

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

    摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof
    14.
    发明申请
    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof 审中-公开
    磁阻效应元件，磁头，磁再生装置及其制造方法

    公开(公告)号：US20080013218A1

    公开(公告)日：2008-01-17

    申请号：US11822700

    申请日：2007-07-09

    申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

    发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  H01L43/08

    摘要： A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

    摘要翻译： 一种磁阻效应元件，包括：磁阻效应膜，包括：具有第一铁磁性膜的磁化固定层，其磁化方向实际上在一个方向上固定; 磁化自由层，具有磁化方向相应于外部磁场而变化的第二铁磁性膜; 以及设置在所述磁化固定层和磁化自由层之间并具有贯穿所述绝缘层的绝缘层和强磁性金属部分的间隔层; 一对电极相对于磁阻效应膜的膜表面在垂直方向施加感测电流; 以及包含设置在磁化固定层的内部和磁化自由层的内部中的至少一个的非铁磁性元件的层。